TS8510VA Infrared Emitter - Equivalent & Substitute Parts

Part Overview

The TS8510VA is an infrared (IR) emitter manufactured by Vishay Semiconductor Opto Division, designed for 855nm wavelength applications with a maximum forward current of 70mA. This component is classified as obsolete, which necessitates identification of active substitute parts to maintain design continuity and ensure ongoing component availability for production and maintenance applications.

Substiute Parts

TS8510VA
Vishay Semiconductor Opto DivisionIn Stock: 1083TS8510VA Datasheet
TS8510VA
Current Part
VSMY385010-GS08
Vishay Semiconductor Opto DivisionIn Stock: 7658VSMY385010-GS08 Datasheet
VSMY385010-GS08
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number TS8510VA
Manufacturer Vishay Semiconductor Opto Division
Type Infrared (IR) Emitter
Wavelength 855nm
Current - DC Forward (If) (Max) 70mA
Voltage - Forward (Vf) (Typ) 1.42V
Viewing Angle 120°
Operating Temperature Range -40°C ~ 100°C (TA)
Mounting Type Surface Mount
Package / Case Die
Product Status Obsolete
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the TS8510VA is determined by the following critical electrical and mechanical parameters:

  • Forward Current (If): Maximum 70mA - substitute must support this current rating
  • Wavelength: 855nm nominal - substitute wavelength must be compatible with system design specifications
  • Viewing Angle: 120° - substitute must maintain equivalent optical dispersion characteristics
  • Mounting Type: Surface Mount - substitute must be compatible with existing PCB assembly processes
  • Operating Temperature Range: -40°C to 100°C - substitute must cover or exceed this thermal operating window
  • RoHS and Compliance Status: ROHS3 Compliant - substitute must maintain equivalent environmental compliance

The VSMY385010-GS08 qualifies as a manufacturer-recommended substitute based on matching electrical performance (70mA forward current, 120° viewing angle, surface mount configuration) and compliance certifications, despite minor variations in wavelength (850nm vs. 855nm) and forward voltage (1.6V vs. 1.42V).

Parameter Comparison

Parameter TS8510VA (Main Part) VSMY385010-GS08 (Substitute)
Manufacturer Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Type Infrared (IR) Emitter Infrared (IR) Emitter
Wavelength 855nm 850nm
Current - DC Forward (If) (Max) 70mA 70mA
Voltage - Forward (Vf) (Typ) 1.42V 1.6V
Viewing Angle 120° 120°
Operating Temperature Range -40°C ~ 100°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case Die 2-SMD, J-Lead
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)

Engineering Selection Recommendations

The VSMY385010-GS08 is the manufacturer-recommended substitute for the obsolete TS8510VA. Both components maintain ROHS3 compliance and equivalent moisture sensitivity ratings. The substitute part is currently in active production status with substantial inventory availability (7549 pcs), ensuring long-term supply chain continuity.

Key considerations for selection:

  • Product Status: The TS8510VA is obsolete; the VSMY385010-GS08 is active and supported by the manufacturer
  • Compliance Certifications: Both parts maintain ROHS3 compliance and REACH unaffected status
  • Electrical Compatibility: Identical forward current rating (70mA) and viewing angle (120°) ensure functional equivalence in most applications
  • Package Transition: Migration from Die package to 2-SMD, J-Lead package requires PCB layout and assembly process evaluation
  • Operating Temperature: The substitute operates to 85°C maximum versus 100°C for the original part; applications requiring operation above 85°C require design review

Frequently Asked Questions (FAQ)

Q: Can the VSMY385010-GS08 directly replace the TS8510VA in existing designs?

A: Electrical substitution is feasible based on matching forward current (70mA), viewing angle (120°), and wavelength proximity (850nm vs. 855nm). However, package transition from Die to 2-SMD, J-Lead requires PCB layout modification and assembly process validation.

Q: What is the significance of the 5nm wavelength difference (855nm to 850nm)?

A: The wavelength difference falls within the near-infrared spectrum range. System compatibility depends on the receiver photodiode or sensor specifications. Applications with wavelength-critical filtering or detection circuits require confirmation that 850nm operation meets performance requirements.

Q: How does the forward voltage difference (1.42V to 1.6V) affect circuit design?

A: The 0.18V increase in typical forward voltage requires current-limiting resistor recalculation to maintain 70mA operation. Driver circuit output voltage headroom must be verified to accommodate the higher forward voltage drop.

Q: Is the reduced operating temperature maximum (85°C vs. 100°C) a limitation?

A: Applications operating within -40°C to 85°C ambient temperature range are unaffected. Designs requiring operation above 85°C require thermal analysis and potential design modification.

Q: What are the assembly implications of the package change?

A: The transition from Die package to 2-SMD, J-Lead package affects PCB footprint, solder reflow profile, and handling procedures. Manufacturing process validation is required before production implementation.

Q: Are compliance certifications maintained with the substitute part?

A: Both parts maintain ROHS3 compliance, REACH unaffected status, and equivalent moisture sensitivity levels (MSL 3, 168 hours), ensuring regulatory continuity.

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