TPS1100DR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The TPS1100DR is a P-Channel MOSFET manufactured by Texas Instruments, designed for surface mount applications in 8-SOIC packaging. This device operates at 15V drain-to-source voltage with 1.6A continuous drain current and is rated for power dissipation up to 791mW. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the same package form factor while maintaining or exceeding critical operational parameters such as voltage rating, current capacity, and thermal characteristics.

Substiute Parts

TPS1100DR

Texas InstrumentsIn Stock: 5133TPS1100DR Datasheet

Current PartRFQ

FDS6375

onsemiIn Stock: 80400FDS6375 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the TPS1100DR is determined by the following criteria:

Mandatory Compatibility Parameters:

• FET Type: P-Channel topology required
• Package: 8-SOIC surface mount form factor (0.154", 3.90mm width)
• Drain-to-Source Voltage (Vdss): Must equal or exceed 15V
• Continuous Drain Current (Id): Must equal or exceed 1.6A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 1.5V maximum specification
• Operating Temperature Range: Must encompass or exceed -40°C to 150°C
• Compliance: RoHS3 and REACH status must match or exceed original specification

Substitute Part Identified:

The FDS6375 (onsemi, PowerTrench® series) meets all mandatory substitution criteria. This device provides enhanced electrical performance with 20V Vdss rating, 8A continuous drain current, and 2.5W power dissipation capability, all within the identical 8-SOIC package footprint. Both parts maintain RoHS3 compliance, MSL 1 rating, and active product status.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection Criteria:

The TPS1100DR remains the preferred choice for applications requiring exact electrical specifications at 15V Vdss with 1.6A drain current and 791mW power dissipation. Texas Instruments manufacturing and supply chain continuity support this selection for established designs.

Substitute Selection Criteria:

The FDS6375 is suitable as a direct substitute when:

• Circuit design permits operation at 20V Vdss (higher voltage rating provides margin)
• Application benefits from increased current capacity (8A vs. 1.6A)
• Enhanced power dissipation capability (2.5W vs. 791mW) is advantageous
• Extended operating temperature range (-55°C to 175°C vs. -40°C to 150°C) is required
• onsemi component qualification is acceptable within procurement specifications

Both parts maintain identical RoHS3 compliance, REACH unaffected status, and MSL 1 moisture sensitivity rating. Both are in active production with established supply availability.

Frequently Asked Questions (FAQ)

Q: Can FDS6375 be used as a direct pin-for-pin replacement for TPS1100DR?

A: Yes. Both devices use 8-SOIC surface mount packaging with identical pinout and footprint (0.154", 3.90mm width). No PCB layout modifications are required.

Q: What are the key electrical differences between these parts?

A: The FDS6375 provides higher voltage rating (20V vs. 15V), significantly higher current capacity (8A vs. 1.6A), lower on-resistance (24mOhm vs. 180mOhm at rated conditions), and greater power dissipation capability (2.5W vs. 791mW). Gate threshold voltage remains identical at 1.5V maximum.

Q: Are there any compliance or certification differences?

A: No. Both parts are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both are in active production status.

Q: When should TPS1100DR be retained over FDS6375?

A: Retain TPS1100DR when design specifications explicitly require 15V Vdss maximum rating, 1.6A current specification, or when Texas Instruments component qualification is mandated by procurement or quality standards.

Q: What is the impact of higher gate charge in FDS6375?

A: FDS6375 gate charge is 36nC at 4.5V compared to 5.45nC at 10V for TPS1100DR. Higher gate charge requires proportionally greater gate drive current and switching time. Circuit design must accommodate this characteristic.

Q: Are both parts suitable for high-temperature applications?

A: FDS6375 supports extended temperature range (-55°C to 175°C) compared to TPS1100DR (-40°C to 150°C). For applications requiring operation above 150°C junction temperature, FDS6375 is the appropriate selection.