TPH4R003NL,L1Q Equivalent & Substitute Parts

Part Overview

The TPH4R003NL,L1Q is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 30V drain-to-source voltage with 40A continuous drain current at 25°C. This device is designed for surface mount applications in the 8-SOP Advance (5x5) package and is currently in active production status with RoHS compliance. Substitute parts are identified to provide alternative sourcing options when the primary part is unavailable or when inventory requirements necessitate component alternatives that meet equivalent electrical and mechanical specifications.

Substiute Parts

TPH4R003NL,L1Q
Toshiba Semiconductor and StorageIn Stock: 934TPH4R003NL,L1Q Datasheet
TPH4R003NL,L1Q
Current Part
RJK03M3DPA-00#J5A
Renesas Electronics CorporationIn Stock: 4214RJK03M3DPA-00#J5A Datasheet
RJK03M3DPA-00#J5A
Similar
RQ3E180AJTB
Rohm SemiconductorIn Stock: 20462RQ3E180AJTB Datasheet
RQ3E180AJTB
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40 A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3 V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15V
Power Dissipation (Max) 1.6 (Ta), 36 (Tc) W
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount -
Package / Case 8-PowerVDFN -
RoHS Status RoHS Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution eligibility for the TPH4R003NL,L1Q is determined by equivalence in the following critical parameters: Drain to Source Voltage (Vdss) of 30V, N-Channel FET technology, surface mount configuration, and operating temperature rating of 150°C. The continuous drain current specification of 40A at 25°C establishes the minimum current handling requirement. On-resistance (Rds On) characteristics, gate charge (Qg), and input capacitance (Ciss) are secondary parameters that influence performance but do not disqualify substitution when primary electrical ratings are met. Package form factor differences are acceptable provided the device maintains surface mount compatibility and thermal performance within specified limits. All substitute parts listed maintain active product status and RoHS compliance certification.

Parameter Comparison

Parameter TPH4R003NL,L1Q (Toshiba) RJK03M3DPA-00#J5A (Renesas) RQ3E180AJTB (Rohm)
Manufacturer Toshiba Semiconductor and Storage Renesas Electronics Corporation Rohm Semiconductor
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Ta) 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 20A, 10V 3.9 mOhm @ 20A, 10V 4.5 mOhm @ 18A, 4.5V
Vgs (Max) ±20 V ±20 V ±12 V
Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10V 15.7 nC @ 4.5V 39 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15V 3010 pF @ 10V 4290 pF @ 15V
Power Dissipation (Max) 1.6W (Ta), 36W (Tc) 35W (Tc) 2W (Ta), 30W (Tc)
Operating Temperature (TJ) 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-WFDFN Exposed Pad 8-PowerVDFN
Supplier Device Package 8-SOP Advance (5x5) 8-WPAK 8-HSMT (3.2x3)
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active

Engineering Selection Recommendations

The RJK03M3DPA-00#J5A from Renesas Electronics Corporation is electrically equivalent to the TPH4R003NL,L1Q, matching the 30V Vdss rating and 40A continuous drain current specification. This substitute maintains identical gate voltage limits (±20V) and demonstrates superior on-resistance performance (3.9 mOhm versus 4 mOhm). The device carries ROHS3 compliance certification and unlimited moisture sensitivity rating. Package differences exist between the 8-SOP Advance (5x5) of the primary part and the 8-WPAK of the substitute; however, both are surface mount configurations with exposed pad thermal management. Power dissipation at case temperature (35W Tc) is marginally lower than the primary part (36W Tc).

The RQ3E180AJTB from Rohm Semiconductor presents a partial substitute option with equivalent 30V Vdss rating but reduced continuous drain current specification of 30A at case temperature, compared to the 40A requirement of the primary part. This device is suitable for applications where the full 40A continuous current is not required. The RQ3E180AJTB exhibits higher gate charge (39 nC) and input capacitance (4290 pF) characteristics, with a reduced maximum gate voltage rating of ±12V. Package configuration is 8-HSMT (3.2x3), differing from both the primary and first substitute part. ROHS3 compliance and unlimited moisture sensitivity rating are maintained.

All three devices maintain active product status, 150°C operating temperature rating, and surface mount mounting type. Selection between substitute parts depends on application-specific requirements for continuous drain current, package footprint compatibility, and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the RJK03M3DPA-00#J5A directly replace the TPH4R003NL,L1Q in all applications?

A: The RJK03M3DPA-00#J5A is electrically equivalent for applications requiring 30V Vdss and 40A continuous drain current. Package differences exist (8-WPAK versus 8-SOP Advance), requiring PCB layout verification for pin compatibility and thermal pad alignment. Both devices maintain identical gate voltage specifications (±20V) and comparable on-resistance characteristics.

Q: Is the RQ3E180AJTB suitable as a substitute for the TPH4R003NL,L1Q?

A: The RQ3E180AJTB is a partial substitute limited to applications where continuous drain current does not exceed 30A at case temperature. The device shares the 30V Vdss rating and 150°C operating temperature but exhibits higher gate charge and input capacitance. The reduced maximum gate voltage (±12V versus ±20V) may restrict use in certain drive circuit configurations.

Q: What are the package compatibility considerations when substituting these parts?

A: The TPH4R003NL,L1Q uses 8-SOP Advance (5x5) packaging, the RJK03M3DPA-00#J5A uses 8-WPAK, and the RQ3E180AJTB uses 8-HSMT (3.2x3). All are surface mount configurations with exposed thermal pads. PCB footprint, pin pitch, and thermal via placement must be verified for each substitute to ensure mechanical and thermal compatibility.

Q: Do all substitute parts meet the same compliance standards as the primary part?

A: The TPH4R003NL,L1Q is RoHS Compliant. Both substitute parts carry ROHS3 Compliant certification, which represents an enhanced compliance standard. All three devices maintain MSL 1 (Unlimited) moisture sensitivity rating. The RJK03M3DPA-00#J5A additionally carries REACH Unaffected status, as does the RQ3E180AJTB.

Q: How do on-resistance characteristics compare between these parts?

A: The TPH4R003NL,L1Q exhibits 4 mOhm Rds On at 20A, 10V. The RJK03M3DPA-00#J5A demonstrates 3.9 mOhm at the same conditions, representing a marginal improvement. The RQ3E180AJTB shows 4.5 mOhm at 18A, 4.5V, which is measured at different current and voltage conditions and therefore not directly comparable.

Q: What is the significance of gate charge differences between these devices?

A: Gate charge (Qg) affects switching speed and drive circuit requirements. The TPH4R003NL,L1Q requires 14.8 nC at 10V, the RJK03M3DPA-00#J5A requires 15.7 nC at 4.5V, and the RQ3E180AJTB requires 39 nC at 4.5V. Higher gate charge increases switching losses and may require higher drive current capability in the gate driver circuit.

Q: Are there inventory considerations when selecting a substitute part?

A: The TPH4R003NL,L1Q has 833 pieces in stock. The RJK03M3DPA-00#J5A has 4120 pieces available, and the RQ3E180AJTB has 20402 pieces in inventory. Substitute selection may be influenced by availability requirements and lead time considerations.

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