Equivalent & Substitute Parts Reference: TPH3208PD

Part Overview

The TPH3208PD from Transphorm is an N-Channel GaNFET (Gallium Nitride Field Effect Transistor) designed for power switching applications, with a drain-to-source voltage rating of 650 V and a continuous drain current rating of 20A (Tc). It features a TO-220AB through-hole package. The product status of TPH3208PD is marked as obsolete, necessitating the identification and evaluation of substitute models for ongoing production or maintenance requirements. Alternative models are sought to maintain supply continuity for designs utilizing this part.

Key Parameters

Parameter	TPH3208PD
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id	2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution decisions for TPH3208PD are based strictly on the following key parameters shared within the transistors, FETs, MOSFETs product category:

FET Type (N-Channel)
Technology
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Drive Voltage
Rds On (Max) at specified current and gate voltage
Gate Threshold Voltage (Vgs(th))
Gate Charge (Qg)
Maximum Gate Source Voltage (Vgs)
Input Capacitance (Ciss)
Maximum Power Dissipation
Operating Temperature Range
Mounting Type
Package / Case
Moisture Sensitivity Level

Substitution is valid only if the alternative model matches or exceeds the minimum required specifications stated above. Product status, compliance declarations, and certifications are additional factors integral to the engineering selection process.

Parameter Comparison

Parameter	TPH3208PD (Transphorm)	STP33N60DM2 (STMicroelectronics)
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	GaNFET (Gallium Nitride)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V	130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.6V @ 300µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V	43 nC @ 10 V
Vgs (Max)	±18V	±25V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V	1870 pF @ 100 V
Power Dissipation (Max)	96W (Tc)	190W (Tc)
Operating Temperature	-55°C ~ 150°C	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

The main part, TPH3208PD, is classified as obsolete. Substitute selection is prioritized based on product status, with STP33N60DM2 identified as active. Both models indicate Moisture Sensitivity Level 1 (Unlimited). STP33N60DM2 is confirmed as RoHS3 compliant and REACH unaffected. Selection based on these compliance and certification fields aligns with established engineering sourcing protocols for direct replacement in applications requiring continued regulatory adherence and supply stability.

Frequently Asked Questions (FAQ)

Q1: What criteria are used when selecting substitute MOSFETs for TPH3208PD?
A1: Substitution is based exclusively on matching electrical ratings such as FET type, drain to source voltage, continuous drain current, drive voltage, Rds On, gate threshold voltage, gate charge, input capacitance, power dissipation, operating temperature range, mounting type, package, and Moisture Sensitivity Level, as provided.

Q2: Are there concerns regarding package compatibility between TPH3208PD and STP33N60DM2?
A2: Both devices are in TO-220-3 through-hole packages, indicating mechanical mounting compatibility.

Q3: How do compliance and certification statuses influence substitute selection?
A3: Obsolete status necessitates replacement, and substitute parts must be active and demonstrate equivalent compliance with requirements such as RoHS and REACH, according to the provided data.

Q4: Is technology type a determining factor for substitution in this case?
A4: Technology type is documented for each device. Substitution is based strictly on the listed technical and mechanical parameters without inference beyond supplied values.

Q5: Why is continuous drain current (Id) at 25°C specifically compared?
A5: Continuous drain current at specified temperature is a key performance metric to ensure the substitute part can operate reliably under similar thermal conditions and current loads.

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