TPH3208LSG Equivalent & Substitute Parts Reference

Part Overview

The Transphorm TPH3208LSG is a GaNFET N-Channel transistor rated for 650 V and 20A (Tc), designed with a maximum power dissipation of 96W (Tc), and housed in a 3-PQFN (8x8) surface mount package. This component is classified as obsolete, requiring engineers to identify compatible alternatives for both new designs and maintenance scenarios. Obsolescence, combined with specific electrical and mechanical requirements, makes the selection of substitute parts based strictly on defined parameters critical for functionality and compliance.

Key Parameters

Parameter	TPH3208LSG Value	Description
Manufacturer	Transphorm	OEM of main part
Category	Transistors, FETs, MOSFETs	Product classification
FET Type	N-Channel	Polarity type
Technology	GaNFET (Gallium Nitride)	Semiconductor material
Drain to Source Voltage (Vdss)	650 V	Maximum rated voltage
Current - Continuous Drain (Id) @ 25°C	20A (Tc)	Max steady-state drain current
Drive Voltage (Max Rds On, Min Rds On)	10V	Gate source for specific Rds(on)
Rds On (Max) @ Id, Vgs	130mOhm @ 14A, 8V	Max on-state resistance
Vgs(th) (Max) @ Id	2.6V @ 300µA	Max gate threshold voltage
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 8 V	Maximum gate charge
Vgs (Max)	±18V	Absolute gate-source voltage
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V	Input capacitance
Power Dissipation (Max)	96W (Tc)	Maximum power rating
Operating Temperature	-55°C ~ 150°C (TJ)	Junction temp range
Mounting Type	Surface Mount	Package mounting style
Supplier Device Package	3-PQFN (8x8)	OEM defined footprint
Package / Case	3-PowerDFN	Device case type
RoHS Status	RoHS Compliant	Environmental compliance
Moisture Sensitivity Level (MSL)	3 (168 Hours)	Handling/storage classification
ECCN	EAR99	Export control code
HTSUS	8541.29.0095	Tariff classification

Substitute Part Grouping Explanation

Substitute part selection for the TPH3208LSG is strictly determined by the following parameters:

FET Type: Must be N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: Comparable or higher value
Mounting Type: Surface Mount
Package / Case: Must be suitable for surface mount, specific form factors as listed
Power Dissipation (Max): Comparable or higher
Rds On (Max) @ Id, Vgs: Comparable value for similar performance
Gate Charge (Qg) (Max): Comparable or lower for similar drive requirements
Operating Temperature: -55°C ~ 150°C (TJ)
RoHS Status and ECCN: Must meet or exceed compliance criteria

Only the IXFA22N65X2 meets these criteria based on explicit parameters provided.

Parameter Comparison

Parameter	TPH3208LSG	IXFA22N65X2
Manufacturer	Transphorm	IXYS
FET Type	N-Channel	N-Channel
Technology	GaNFET (Gallium Nitride)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 14A, 8V	160mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.6V @ 300µA	5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 8 V	38 nC @ 10 V
Vgs (Max)	±18V	±30V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V	2310 pF @ 25 V
Power Dissipation (Max)	96W (Tc)	390W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	3-PowerDFN	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status	RoHS Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)	1 (Unlimited)
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

TPH3208LSG is obsolete, while IXFA22N65X2 is active and meets the same RoHS and EAR99 compliance standards. Both parts are surface mount and maintain equivalent environmental ratings. Selection can be based on RoHS status, ECCN compliance, and active product status without considering criteria beyond those provided.

Frequently Asked Questions (FAQ)

Q1: What criteria determine a valid substitute for the TPH3208LSG?
Only explicit parameters such as FET type, drain to source voltage, continuous drain current, mounting type, power dissipation, and environmental compliance are considered.

Q2: Is the package of IXFA22N65X2 directly compatible with 3-PQFN (8x8)?
IXFA22N65X2 uses TO-263HV, TO-263-3, D2PAK, or TO-263AB. Compatibility depends solely on surface mount capability based on provided data; no form factor inference is made beyond mounting type.

Q3: What compliance standards must substitutes meet?
Substitutes must be RoHS compliant and fall under ECCN EAR99 as specified.

Q4: Does the technology difference between GaNFET and MOSFET affect substitution?
Technology is documented as a parameter but only inclusion of N-Channel, Vdss, Id, and compliance fields determine substitution validity.

Q5: Are there operational differences due to moisture sensitivity level (MSL)?
TPH3208LSG is rated at MSL 3 (168 Hours), IXFA22N65X2 is rated at MSL 1 (Unlimited). Selection based on provided MSL is permitted, without further technical evaluation.

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