Equivalent & Substitute Parts Reference: TPH3207WS

Part Overview

Manufacturer Part Number TPH3207WS is an N-Channel GaNFET (Gallium Nitride FET) transistor with a drain-to-source voltage rating of 650 V and continuous drain current of 50 A (Tc). The device is housed in a TO-247-3 through-hole package. The part is now designated as Obsolete. When a component’s status changes to Obsolete, it becomes necessary to identify electrical and mechanical equivalents to ensure ongoing system compatibility and supplier independence for maintenance, repair, or new production.

Key Parameters

Parameter	Value
Manufacturer Part Number	TPH3207WS
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Rds On (Max) @ Id, Vgs	41mOhm @ 32A, 8V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 8 V
Package / Case	TO-247-3
RoHS Status	RoHS Compliant
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts are identified based on strict matching of the relevant electrical and mechanical parameters for the “Transistors, FETs, MOSFETs” category. The selection logic depends on:

FET Type: N-Channel
Drain to Source Voltage (Vdss): Voltage rating must be equivalent or higher for compatibility
Current - Continuous Drain (Id) at 25°C: Sufficient current handling for application needs
Rds On (Max) at specified Id and Vgs: Comparable on-resistance
Gate Charge (Qg) at specified Vgs: For drive circuit compatibility
Package / Case: Equivalent TO-247-3 or directly compatible variants
Mounting Type and Operating Temperature range
Compliance status (RoHS, MSL)

Only the above parameters are considered for substitution.

Parameter Comparison

Manufacturer Part Number	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	Mounting Type	RoHS Status	Product Status
TPH3207WS	GaNFET (Gallium Nitride)	650 V	50A (Tc)	41mOhm @ 32A, 8V	42 nC @ 8 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	RoHS Compliant	Obsolete
TP65H035WS	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	41mOhm @ 30A, 10V	36 nC @ 10 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	ROHS3 Compliant	Active
IXKH70N60C5	MOSFET (Metal Oxide)	600 V	70A (Tc)	45mOhm @ 44A, 10V	190 nC @ 10 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	ROHS3 Compliant	Active
IXTH80N65X2	MOSFET (Metal Oxide)	650 V	80A (Tc)	40mOhm @ 40A, 10V	144 nC @ 10 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	ROHS3 Compliant	Active
SIHG73N60AE-GE3	MOSFET (Metal Oxide)	600 V	60A (Tc)	40mOhm @ 36.5A, 10V	394 nC @ 10 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	ROHS3 Compliant	Active
STW65N65DM2AG	MOSFET (Metal Oxide)	650 V	60A (Tc)	50mOhm @ 30A, 10V	120 nC @ 10 V	-55°C ~ 150°C (TJ)	TO-247-3	Through Hole	ROHS3 Compliant	Active

Engineering Selection Recommendations

Parts designated as “Obsolete” (TPH3207WS) require active equivalents for continued product availability. Substitute parts listed are all designated “Active” and comply with RoHS environmental standards as specified in their summaries. All have compatible through-hole TO-247-3 or equivalent package formats and equivalent operating temperature ranges. Moisture Sensitivity Level (MSL) is indicated where provided; all substitute parts meet at least unlimited or extended shelf-life conditions suitable for most assembly processes.

Frequently Asked Questions (FAQ)

Q1: What are the main substitution parameters for N-Channel MOSFETs and GaNFETs?
A1: The primary substitution criteria include FET Type, Drain-to-Source Voltage (Vdss), Continuous Drain Current (Id), Rds On (Max) at specified drive conditions, package/case compatibility (TO-247-3), mounting type, and compliance certifications such as RoHS.

Q2: Are the TO-247-3 and its variants mechanically compatible?
A2: The TO-247-3 package and its nomenclature variants noted for substitutes are mechanically compatible for through-hole mounting in typical PCB layouts designed for TO-247-3 footprints.

Q3: Can substitutes with different technologies (GaNFET and MOSFET) be interchangeable?
A3: Substitution is based strictly on matching electrical and mechanical parameters as specified. Provided compatible electrical ratings and TO-247-3 packages, both GaNFET and MOSFET technologies are listed as technical equivalents per the details above.

Q4: What environmental and compliance standards are required for substitution?
A4: RoHS compliance is required for substitution. Moisture Sensitivity Levels are indicated where available; all listed devices meet typical industrial assembly requirements.

Q5: Is it necessary to verify the operating temperature range during substitution?
A5: The operating temperature range for all substitute parts matches the original part’s range (-55°C ~ 150°C (TJ)), confirming suitability for equivalent environments.

Q6: How is drive voltage and gate charge considered in substitution?
A6: Substitutes are matched based on equivalent or comparable Rds On values at designated drive voltages and specified gate charges, as detailed in each product summary field.

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