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Equivalent & Substitute Parts Reference for TPH3206PSB
Part Overview
TPH3206PSB is a Gallium Nitride (GaNFET) N-Channel MOSFET with a voltage rating of 650 V and a continuous drain current of 16A (Tc), encapsulated in a TO-220AB package for through-hole mounting. This device was designed for high-efficiency power switching applications. The TPH3206PSB is classified as obsolete, making it necessary to identify drop-in substitute models that match the critical electrical and mechanical characteristics to ensure application continuity.
Substiute Parts
Key Parameters
| Parameter | TPH3206PSB |
|---|---|
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| Power Dissipation (Max) | 81W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package/Case | TO-220-3 (TO-220AB) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute selection is based strictly on identical or higher performance in the following key parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, drive voltage, gate threshold voltage (Vgs(th)), gate charge (Qg), Vgs (Max), input capacitance (Ciss), maximum power dissipation, operating temperature range, mounting type, and package. Only parts with matching through-hole TO-220-3 (TO-220AB) packages and identical or superior electrical characteristics are included.
Parameter Comparison
| Parameter | TPH3206PSB | TP65H150G4PS |
|---|---|---|
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Continuous Drain Current (Id) @ 25°C | 16A (Tc) | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V | 180mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA | 4.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V | 8 nC @ 10 V |
| Vgs (Max) | ±18V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V | 598 pF @ 400 V |
| Power Dissipation (Max) | 81W (Tc) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package/Case | TO-220-3 (TO-220AB) | TO-220-3 (TO-220AB) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Obsolete | Active |
Engineering Selection Recommendations
TPH3206PSB is obsolete and no longer in production. TP65H150G4PS is listed as an active device. Both devices have an MSL of 1 (Unlimited). TP65H150G4PS is RoHS3 compliant.
Frequently Asked Questions (FAQ)
Q1: What are the critical criteria for substituting TPH3206PSB in a design?
A1: The substitute must match the FET type, technology, drain-to-source voltage, continuous drain current, gate drive voltage, Rds On, gate threshold voltage, gate charge, Vgs (Max), input capacitance, power dissipation, operating temperature range, package/footprint, and mounting type.
Q2: Is the TO-220AB (TO-220-3) package maintained in the substitute?
A2: Yes, both the TPH3206PSB and TP65H150G4PS use the TO-220AB (TO-220-3) through-hole package, ensuring mechanical compatibility.
Q3: Can TP65H150G4PS serve as a direct substitute for TPH3206PSB in terms of regulatory requirements?
A3: TP65H150G4PS is specified as ROHS3 compliant and has an MSL of 1 (Unlimited), matching or exceeding the regulatory and handling requirements specified for TPH3206PSB.
Q4: Are there differences in key electrical parameters between TPH3206PSB and TP65H150G4PS?
A4: Both parts have the same drain-to-source voltage, continuous drain current, and Rds On (with slightly different test conditions). There are variations in gate threshold voltage, gate charge, and input capacitance as specified.
Q5: Why is it necessary to select a substitute with matching MSL?
A5: Matching MSL ensures reliability during storage and handling in standard production environments. Both devices have an MSL of 1 (Unlimited), allowing unrestricted manufacturing conditions.
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