Equivalent & Substitute Parts for TPH3206PD

Part Overview

TPH3206PD is an N-Channel GaNFET (Gallium Nitride Field Effect Transistor) manufactured by Transphorm, classified under Transistors, FETs, and MOSFETs. The device is characterized by a 600 V drain-to-source voltage, 17A continuous drain current, and TO-220AB package. Its product status is "Not For New Designs," and as such, engineering applications requiring ongoing production support or long-term availability require evaluation of substitute or equivalent components. Identification of alternatives is essential to ensure continued manufacturing compatibility, procurement stability, and conformance with regulatory compliance requirements.

Substiute Parts

TPH3206PD
TransphormIn Stock: 1065TPH3206PD Datasheet
TPH3206PD
Current Part
TPH3206PS
TransphormIn Stock: 1327TPH3206PS Datasheet
TPH3206PS
Parametric Equivalent
SCT20N120
STMicroelectronicsIn Stock: 3863SCT20N120 Datasheet
SCT20N120
Similar

Key Parameters

Parameter TPH3206PD Value
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Substitute Part Grouping Explanation

Substitution logic for TPH3206PD is governed strictly by the key electrical, mechanical, and compliance parameters provided. Components are grouped as follows:

  • Parametric Equivalents: Exact or direct substitutes matching all principal parameters, including FET type, technology, electrical ratings (Vdss, Id, Rds(on)), gate characteristics, capacitance, power dissipation, package type, and compliance data.
  • Similar Parts: Devices with differences in technology, voltage, current, on-resistance, gate charge, or package specifications. These may have variations in electrical ratings and physical interfaces but retain category compatibility.

Key parameters used for determining substitute eligibility include:

  • FET type
  • Technology
  • Drain-source voltage (Vdss)
  • Continuous drain current (Id)
  • Rds(on) maximum value
  • Gate threshold voltage (Vgs(th))
  • Gate charge (Qg)
  • Input capacitance (Ciss)
  • Power dissipation
  • Operating temperature range
  • Mounting type and package
  • Compliance status

Parameter Comparison

Parameter TPH3206PD TPH3206PS SCT20N120
Manufacturer Transphorm Transphorm STMicroelectronics
FET Type N-Channel N-Channel N-Channel
Technology GaNFET GaNFET SiCFET
Drain to Source Voltage (Vdss) 600 V 600 V 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 20V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V 180mOhm @ 11A, 8V 290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 2.6V @ 500µA 2.6V @ 500µA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V 9.3 nC @ 4.5 V 45 nC @ 20 V
Vgs (Max) ±18V ±18V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V 760 pF @ 480 V 650 pF @ 400 V
Power Dissipation (Max) 96W (Tc) 96W (Tc) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB HiP247™
Package / Case TO-220-3 TO-220-3 TO-247-3
RoHS Status RoHS Compliant RoHS Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
ECCN EAR99 EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

TPH3206PD and TPH3206PS are matched parametric equivalents, with compatibility in all specified key parameters and compliance features. Both are GaNFET N-Channel MOSFETs rated for identical voltage, current, power dissipation, package type, and regulatory certifications. SCT20N120, while in the same component category, differs in core technology (SiCFET), voltage, current, gate, and package characteristics despite sharing some category-level specifications. RoHS compliance and MSL ratings are equivalent across all options.

Substitution should be determined strictly by matching electrical categories, compliance statuses, and package codes as listed. Selection between TPH3206PD and TPH3206PS is direct; SCT20N120 requires assessment of differing electrical and mechanical characteristics based solely on the provided input.

Frequently Asked Questions (FAQ)

Q1: What defines a parametric equivalent for TPH3206PD?
A parametric equivalent must match all provided key electrical and mechanical parameters, including FET type, technology, voltage rating, current rating, Rds(on), gate charge, capacitance, power dissipation, operating temperature, mounting type, package, and compliance certifications.

Q2: Is TPH3206PS a direct substitute for TPH3206PD?
TPH3206PS matches all core parameters, including electrical ratings and package type, allowing direct substitution within the same application and board footprint.

Q3: What are the differences with SCT20N120 as a substitute?
SCT20N120 uses a different technology (SiCFET), has higher voltage and current ratings, different Rds(on), gate characteristics, and features a distinct package (TO-247-3, HiP247™) compared to TO-220AB. Substitution is permitted only within these explicit parameters.

Q4: Are all listed substitutes RoHS compliant and suitable for unrestricted storage/reflow?
All substitutes are RoHS-compliant and have a Moisture Sensitivity Level of 1 (Unlimited), supporting unrestricted storage and processing conditions.

Q5: Does package type affect compatibility?
Package type and case are key substitution factors. TO-220-3 and TO-247-3 have distinct mechanical specifications and board mounting requirements. Only substitute parts with matching package codes ensure drop-in compatibility for existing layouts.

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