Equivalent & Substitute Parts Reference for TPH3202PD

Part Overview

TPH3202PD is a GaNFET N-Channel transistor rated at 600 V and 9A, offered in the TO-220AB through-hole package. This component, manufactured by Transphorm, is categorized under Transistors, FETs, MOSFETs. The part status is Obsolete, necessitating identification of direct substitutes to maintain compatibility and ensure continued production reliability in designs that specify TPH3202PD.

Key Parameters

Parameter	TPH3202PD
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 480 V
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute selection for TPH3202PD is based strictly on the following key parameters: Category (Transistors, FETs, MOSFETs), FET Type (N-Channel), Drain to Source Voltage (Vdss), Current - Continuous Drain (Id), Drive Voltage, Rds On (Max), Package Type, Mounting Type, and Moisture Sensitivity Level. Substitutes must match or exceed these specifications and maintain package compatibility for direct replacement in existing designs.

Parameter Comparison

Parameter	TPH3202PD	IXKP13N60C5	STP15N60M2-EP	TK10E60W,S1VX
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	GaNFET	MOSFET	MOSFET	MOSFET
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)	13A (Tc)	11A (Tc)	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max)	350mOhm @ 5.5A, 8V	300mOhm @ 6.6A, 10V	378mOhm @ 5.5A, 10V	380mOhm @ 4.9A, 10V
Vgs(th) (Max)	2.5V @ 250µA	3.5V @ 440µA	4V @ 250µA	3.7V @ 500µA
Gate Charge (Qg) (Max)	9.3 nC @ 4.5 V	30 nC @ 10 V	17 nC @ 10 V	20 nC @ 10 V
Vgs (Max)	±18V	±20V	±25V	±30V
Input Capacitance (Ciss) (Max)	760 pF @ 480 V	1100 pF @ 100 V	590 pF @ 100 V	700 pF @ 300 V
Power Dissipation (Max)	65W (Tc)	-	110W (Tc)	100W (Tc)
Operating Temperature (TJ)	-55°C ~ 175°C	-55°C ~ 150°C	-55°C ~ 150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	Not Applicable
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

TPH3202PD is listed as Obsolete. Substitute parts IXKP13N60C5 (IXYS), STP15N60M2-EP (STMicroelectronics), and TK10E60W,S1VX (Toshiba Semiconductor and Storage) are classified as Active. All substitutes conform to RoHS compliance, with a Moisture Sensitivity Level of 1 (Unlimited) or Not Applicable, ensuring suitability within current operational and regulatory requirements. These substitutes are available in TO-220-3 through-hole packages, matching the mounting and mechanical requirements of TPH3202PD.

Frequently Asked Questions (FAQ)

Q: What parameters determine whether a substitute MOSFET can replace TPH3202PD?
A: The critical substitution criteria are FET type (N-Channel), technology, drain to source voltage (600V), continuous drain current, drive voltage, Rds On, gate charge, package/case type, and mounting type.

Q: Is package compatibility maintained with proposed substitutes?
A: All substitute parts feature the TO-220-3 package and through-hole mounting, compatible with the original TPH3202PD PCB layout.

Q: Does the substitute part ensure regulatory and environmental compliance?
A: Substitute models meet RoHS compliance and offer a moisture sensitivity rating of MSL 1 (Unlimited) or Not Applicable for unrestricted handling and assembly conditions.

Q: What is the importance of matching drain-source voltage and continuous drain current?
A: Matching or exceeding these parameters ensures the substitute part functions within the intended electrical operating conditions of the original application.

Q: Why use an active status part as a substitute for an obsolete component?
A: Substitution with an active status part ensures ongoing availability and manufacturing support for future production needs.

Q: Are there any significant technology differences?
A: TPH3202PD employs GaNFET technology, while substitutes use MOSFET (Metal Oxide) technology. All other electrical and mechanical parameters align with substitution requirements.

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