Equivalent & Substitute Parts Reference for TPH3202LS

Part Overview

TPH3202LS is a Gallium Nitride (GaN) N-Channel FET MOSFET from Transphorm. It features a 600V maximum drain-to-source voltage and 9A continuous drain current, with a 65W (Tc) power dissipation rating, and is packaged in a 3-PQFN (8x8) surface mount format. The product status is Obsolete, making it necessary to identify substitute part numbers with closely matching electrical and mechanical parameters to ensure sustained product designs and ongoing maintenance.

Substiute Parts

TPH3202LS
TransphormIn Stock: 880TPH3202LS Datasheet
TPH3202LS
Current Part
TP65H300G4LSG-TR
TransphormIn Stock: 7708TP65H300G4LSG-TR Datasheet
TP65H300G4LSG-TR
Similar

Key Parameters

Manufacturer Part Number Manufacturer Category Description Detailed Description Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case Moisture Sensitivity Level (MSL) ECCN HTSUS
TPH3202LS Transphorm Transistors, FETs, MOSFETs GANFET N-CH 600V 9A 3PQFN N-Channel 600 V 9A (Tc) 65W (Tc) Surface Mount 3-PQFN (8x8) Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 9A (Tc) 10V 350mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480V 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount 3-PQFN (8x8) 3-PowerDFN 3 (168 Hours) EAR99 8541.29.0095

Substitute Part Grouping Explanation

Substitute part selection for TPH3202LS is strictly governed by the following key parameters: FET type (N-Channel), technology (GaN), drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, and package format. The substitute part, TP65H300G4LSG-TR, aligns with the critical requirements regarding FET type, technology, mechanical form factor, and compliance attributes.

Parameter Comparison

Parameter TPH3202LS TP65H300G4LSG-TR
Manufacturer Part Number TPH3202LS TP65H300G4LSG-TR
Manufacturer Transphorm Transphorm
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Description GANFET N-CH 600V 9A 3PQFN GANFET N-CH 650V 6.5A 3PQFN
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology GaNFET (Gallium Nitride) GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 6.5A (Tc)
Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V 312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V 9.6 nC @ 8 V
Vgs (Max) ±18V ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V 760 pF @ 400 V
Power Dissipation (Max) 65W (Tc) 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PQFN (8x8) 3-PQFN (8x8)
Package / Case 3-PowerDFN 3-PowerDFN
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

TPH3202LS is designated as obsolete, requiring selection of substitute parts for ongoing design and maintenance activities. The substitute TP65H300G4LSG-TR is active, shares identical package type and mounting method, and matches ECCN, HTSUS, and MSL compliance requirements. Select substitute parts that meet electrical and mechanical specifications provided above and retain full compliance with listed standards.

Frequently Asked Questions (FAQ)

Q1: What are the primary parameters considered when substituting TPH3202LS?
A1: The substitution logic is strictly based on FET type (N-Channel), semiconductor technology (GaNFET), drain-to-source voltage, continuous drain current, Rds On, gate charge, Vgs maximum rating, input capacitance, power dissipation, operating temperature range, and mechanical package specifications.

Q2: Are the package and mounting type of TP65H300G4LSG-TR identical to TPH3202LS?
A2: Yes, both models use the 3-PQFN (8x8) surface-mount format and 3-PowerDFN case, ensuring direct mechanical compatibility.

Q3: Does the substitute part meet the same compliance and certification requirements as the original part?
A3: TP65H300G4LSG-TR maintains identical ECCN (EAR99), HTSUS classification, and Moisture Sensitivity Level (MSL 3, 168 Hours), aligning with compliance requirements of TPH3202LS.

Q4: What electrical differences exist between TPH3202LS and TP65H300G4LSG-TR?
A4: TP65H300G4LSG-TR provides a higher drain-to-source voltage (650V instead of 600V) and a lower continuous drain current (6.5A instead of 9A), with a lower Rds On and gate charge rating differentiated by test conditions.

Q5: Is direct pin compatibility assured between the two parts?
A5: Both parts use the same supplier device package and case format (3-PQFN (8x8) / 3-PowerDFN), supporting direct placement in existing designs within the constraints of provided parameters.

Request Quote (Ships tomorrow)