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Equivalent & Substitute Parts Reference for TPH3202LS
Part Overview
TPH3202LS is a Gallium Nitride (GaN) N-Channel FET MOSFET from Transphorm. It features a 600V maximum drain-to-source voltage and 9A continuous drain current, with a 65W (Tc) power dissipation rating, and is packaged in a 3-PQFN (8x8) surface mount format. The product status is Obsolete, making it necessary to identify substitute part numbers with closely matching electrical and mechanical parameters to ensure sustained product designs and ongoing maintenance.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Manufacturer | Category | Description | Detailed Description | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Moisture Sensitivity Level (MSL) | ECCN | HTSUS |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPH3202LS | Transphorm | Transistors, FETs, MOSFETs | GANFET N-CH 600V 9A 3PQFN | N-Channel 600 V 9A (Tc) 65W (Tc) Surface Mount 3-PQFN (8x8) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480V | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN | 3 (168 Hours) | EAR99 | 8541.29.0095 |
Substitute Part Grouping Explanation
Substitute part selection for TPH3202LS is strictly governed by the following key parameters: FET type (N-Channel), technology (GaN), drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, and package format. The substitute part, TP65H300G4LSG-TR, aligns with the critical requirements regarding FET type, technology, mechanical form factor, and compliance attributes.
Parameter Comparison
| Parameter | TPH3202LS | TP65H300G4LSG-TR |
|---|---|---|
| Manufacturer Part Number | TPH3202LS | TP65H300G4LSG-TR |
| Manufacturer | Transphorm | Transphorm |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| Description | GANFET N-CH 600V 9A 3PQFN | GANFET N-CH 650V 6.5A 3PQFN |
| Product Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V | 312mOhm @ 5A, 8V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2.6V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V | 9.6 nC @ 8 V |
| Vgs (Max) | ±18V | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V | 760 pF @ 400 V |
| Power Dissipation (Max) | 65W (Tc) | 21W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) | 3-PQFN (8x8) |
| Package / Case | 3-PowerDFN | 3-PowerDFN |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
TPH3202LS is designated as obsolete, requiring selection of substitute parts for ongoing design and maintenance activities. The substitute TP65H300G4LSG-TR is active, shares identical package type and mounting method, and matches ECCN, HTSUS, and MSL compliance requirements. Select substitute parts that meet electrical and mechanical specifications provided above and retain full compliance with listed standards.
Frequently Asked Questions (FAQ)
Q1: What are the primary parameters considered when substituting TPH3202LS?
A1: The substitution logic is strictly based on FET type (N-Channel), semiconductor technology (GaNFET), drain-to-source voltage, continuous drain current, Rds On, gate charge, Vgs maximum rating, input capacitance, power dissipation, operating temperature range, and mechanical package specifications.
Q2: Are the package and mounting type of TP65H300G4LSG-TR identical to TPH3202LS?
A2: Yes, both models use the 3-PQFN (8x8) surface-mount format and 3-PowerDFN case, ensuring direct mechanical compatibility.
Q3: Does the substitute part meet the same compliance and certification requirements as the original part?
A3: TP65H300G4LSG-TR maintains identical ECCN (EAR99), HTSUS classification, and Moisture Sensitivity Level (MSL 3, 168 Hours), aligning with compliance requirements of TPH3202LS.
Q4: What electrical differences exist between TPH3202LS and TP65H300G4LSG-TR?
A4: TP65H300G4LSG-TR provides a higher drain-to-source voltage (650V instead of 600V) and a lower continuous drain current (6.5A instead of 9A), with a lower Rds On and gate charge rating differentiated by test conditions.
Q5: Is direct pin compatibility assured between the two parts?
A5: Both parts use the same supplier device package and case format (3-PQFN (8x8) / 3-PowerDFN), supporting direct placement in existing designs within the constraints of provided parameters.
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