TPCP8005-H(TE85L,F Equivalent & Substitute Parts

Part Overview

The TPCP8005-H(TE85L,F is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 30V drain-to-source voltage with 11A continuous drain current. This device is packaged in a PS-8 (2.9x2.4) surface mount configuration and is classified as obsolete. Due to its obsolete product status, identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

TPCP8005-H(TE85L,F
Toshiba Semiconductor and StorageIn Stock: 1096TPCP8005-H(TE85L,F Datasheet
TPCP8005-H(TE85L,F
Current Part
TPN11003NL,LQ
Toshiba Semiconductor and StorageIn Stock: 12179TPN11003NL,LQ Datasheet
TPN11003NL,LQ
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 11 A
Rds On (Max) @ 5.5A, 10V 12.9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 2.5 V
Gate Charge (Qg) @ 10V 20 nC
Input Capacitance (Ciss) @ 10V 2150 pF
Power Dissipation (Max) 840 mW (Ta)
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package Type PS-8 (2.9x2.4)
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the TPCP8005-H(TE85L,F is determined by electrical parameter equivalence and mechanical compatibility. The primary substitute identified is the TPN11003NL,LQ, which maintains functional equivalence through matching critical electrical specifications:

Electrical Equivalence Criteria:

  • Identical FET type (N-Channel) and technology (MOSFET Metal Oxide)
  • Matching drain-to-source voltage rating (30V)
  • Matching continuous drain current rating (11A)
  • Compatible gate voltage specifications (±20V maximum)
  • Comparable on-resistance characteristics (11mOhm vs. 12.9mOhm)

Mechanical Compatibility Considerations:

  • Both devices are surface mount configurations
  • Package footprints differ (PS-8 vs. 8-TSON Advance), requiring PCB layout evaluation
  • Physical dimensions vary (2.9x2.4 vs. 3.1x3.1), necessitating board space verification

The TPN11003NL,LQ represents an active product with enhanced thermal performance and improved gate charge characteristics, making it suitable for direct functional replacement where package constraints permit.

Parameter Comparison

Parameter TPCP8005-H(TE85L,F TPN11003NL,LQ Unit
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 11 11 A
Drive Voltage (Max Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ 5.5A, 10V 12.9 11 mOhm
Gate Threshold Voltage (Vgs(th)) 2.5 @ 1mA 2.3 @ 100µA V
Gate Charge (Qg) @ 10V 20 7.5 nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) @ Vds 2150 @ 10V 660 @ 15V pF
Power Dissipation (Max) 840 (Ta) 700 (Ta), 19 (Tc) mW / W
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package Type PS-8 (2.9x2.4) 8-TSON Advance (3.1x3.1)
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: The TPCP8005-H(TE85L,F is classified as obsolete, while the TPN11003NL,LQ maintains active product status. This distinction is significant for long-term supply chain planning and technical support availability.

Compliance and Certification: The TPN11003NL,LQ carries RoHS Compliance certification, whereas the TPCP8005-H(TE85L,F does not specify RoHS status. Both devices are classified under ECCN EAR99 and share identical HTSUS codes (8541.21.0095 and 8541.29.0095 respectively), indicating comparable regulatory treatment.

Electrical Performance: The TPN11003NL,LQ demonstrates superior electrical characteristics, including lower on-resistance (11mOhm vs. 12.9mOhm), reduced gate charge (7.5nC vs. 20nC), and lower input capacitance (660pF vs. 2150pF). These improvements result in reduced switching losses and improved thermal performance.

Thermal Performance: The TPN11003NL,LQ provides enhanced thermal dissipation capability (19W at Tc) compared to the TPCP8005-H(TE85L,F (840mW at Ta), enabling operation in higher thermal stress environments.

Package Compatibility: Direct physical substitution requires PCB layout modification due to package footprint differences. The PS-8 package (2.9x2.4) differs from the 8-TSON Advance package (3.1x3.1), necessitating board redesign evaluation.

Frequently Asked Questions (FAQ)

Q: Can the TPN11003NL,LQ be used as a direct drop-in replacement for the TPCP8005-H(TE85L,F?

A: Electrical substitution is valid based on matching voltage ratings, current ratings, and gate specifications. However, physical substitution requires PCB layout modification due to different package footprints (PS-8 vs. 8-TSON Advance). The devices are not mechanically interchangeable without board redesign.

Q: What are the key electrical differences between these two MOSFETs?

A: The TPN11003NL,LQ exhibits lower on-resistance (11mOhm vs. 12.9mOhm), significantly reduced gate charge (7.5nC vs. 20nC), and lower input capacitance (660pF vs. 2150pF). These characteristics result in improved switching efficiency and reduced power dissipation during operation.

Q: Why is the gate charge specification important for substitution?

A: Gate charge directly affects switching speed and driver circuit requirements. The TPN11003NL,LQ requires less gate charge (7.5nC), enabling faster switching transitions and potentially reducing driver power consumption. Existing driver circuits designed for the TPCP8005-H(TE85L,F may require evaluation for compatibility with the lower gate charge specification.

Q: What is the significance of the different gate threshold voltage test conditions?

A: The TPCP8005-H(TE85L,F specifies Vgs(th) at 1mA, while the TPN11003NL,LQ specifies it at 100µA. This difference reflects different measurement methodologies but does not prevent functional substitution, as both devices operate within the same gate voltage range (±20V maximum).

Q: How do the package differences affect thermal performance?

A: The 8-TSON Advance package (3.1x3.1) provides superior thermal coupling to the PCB compared to the PS-8 package (2.9x2.4). The TPN11003NL,LQ achieves 19W thermal dissipation at Tc, compared to 840mW at Ta for the TPCP8005-H(TE85L,F, indicating improved heat transfer capability in the newer package design.

Q: Is the TPN11003NL,LQ suitable for applications requiring RoHS compliance?

A: Yes. The TPN11003NL,LQ carries RoHS Compliance certification, making it suitable for applications with RoHS requirements. The TPCP8005-H(TE85L,F does not specify RoHS status and should not be assumed compliant.

Q: What inventory considerations should be evaluated?

A: The TPCP8005-H(TE85L,F has 1009 pieces in stock but is obsolete, indicating limited future availability. The TPN11003NL,LQ has 12100 pieces in stock and maintains active product status, providing superior long-term supply chain security.

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