TPCP8003-H(TE85L,F Equivalent & Substitute Parts

Part Overview

The TPCP8003-H(TE85L,F is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 100V drain-to-source voltage with 2.2A continuous drain current. This device is housed in a PS-8 surface mount package and is part of the U-MOSIII-H series. The product is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	2.2	A (Ta)
Rds On (Max) @ Id, Vgs	180	mOhm @ 1.1A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	2.3	V @ 1mA
Power Dissipation (Max)	840	mW (Ta)
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package Type	PS-8 (2.9x2.4)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the TPCP8003-H(TE85L,F is determined by strict electrical and mechanical compatibility criteria. The primary substitute identified is the TPN3300ANH,LQ, which maintains the following critical parameters:

Electrical Compatibility Criteria:

Identical FET type: N-Channel MOSFET technology
Matching drain-to-source voltage rating: 100V
Equivalent maximum gate voltage: ±20V
Compatible operating temperature range: 150°C (TJ)

Mechanical Compatibility Criteria:

Surface mount technology maintained
Both devices feature MSL 1 (Unlimited) moisture sensitivity classification

Performance Considerations: The TPN3300ANH,LQ provides enhanced electrical performance characteristics, including higher continuous drain current (9.4A versus 2.2A) and significantly lower on-resistance (33mOhm versus 180mOhm). These improvements ensure the substitute part can fulfill the original application requirements while offering superior thermal and current handling capabilities.

Parameter Comparison

Parameter	TPCP8003-H(TE85L,F	TPN3300ANH,LQ	Unit
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	2.2 (Ta)	9.4 (Tc)	A
Rds On (Max) @ Id, Vgs	180 @ 1.1A, 10V	33 @ 4.7A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	2.3 @ 1mA	4 @ 100µA	V
Gate Charge (Qg) (Max) @ Vgs	7.5 @ 10V	11 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	360 @ 10V	880 @ 50V	pF
Power Dissipation (Max)	840 (Ta)	700 (Ta), 27 (Tc)	mW / W
Operating Temperature (TJ)	150	150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package Type	PS-8 (2.9x2.4)	8-TSON Advance (3.3x3.3)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The TPN3300ANH,LQ is the qualified substitute for the TPCP8003-H(TE85L,F based on the following engineering criteria:

Product Status Alignment: The substitute part maintains active product status with Toshiba Semiconductor and Storage, ensuring long-term availability and supply chain continuity. The original part is classified as obsolete, making substitution necessary for production and design continuity.

Electrical Specification Compliance: Both devices operate within identical voltage ratings (100V Vdss) and temperature ranges (150°C TJ), with matching maximum gate voltage specifications (±20V). The substitute part exceeds the original specifications in current-handling capacity and on-resistance performance, providing design margin for thermal and electrical stress conditions.

Regulatory and Compliance Status: The TPN3300ANH,LQ carries RoHS Compliant certification, meeting modern environmental and regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS classifications, ensuring consistent export and trade compliance.

Moisture Sensitivity Classification: Both devices maintain MSL 1 (Unlimited) classification, indicating equivalent handling and storage requirements with no moisture sensitivity constraints.

Package Consideration: The substitute part utilizes an 8-TSON Advance package (3.3x3.3) compared to the original PS-8 package (2.9x2.4). PCB layout modification is required to accommodate the different package footprint and pin configuration.

Frequently Asked Questions (FAQ)

Q: Can the TPN3300ANH,LQ directly replace the TPCP8003-H(TE85L,F without PCB modifications?

A: No. While both devices are N-Channel MOSFETs with identical voltage ratings, the package types differ. The original uses PS-8 (2.9x2.4) while the substitute uses 8-TSON Advance (3.3x3.3). PCB footprint redesign is required.

Q: What are the key electrical differences between these two parts?

A: The TPN3300ANH,LQ provides superior performance with 9.4A continuous drain current versus 2.2A, and 33mOhm on-resistance versus 180mOhm. Both maintain 100V Vdss rating and 150°C operating temperature. These improvements allow the substitute to handle higher current loads with reduced power dissipation.

Q: Are there any gate drive voltage differences that affect circuit design?

A: The gate threshold voltage differs slightly (2.3V for original versus 4V for substitute). Both devices accept ±20V maximum gate voltage. Existing gate drive circuits designed for the original part will function with the substitute, though gate charge is slightly higher (11nC versus 7.5nC).

Q: Does the substitute part meet the same environmental and regulatory standards?

A: The TPN3300ANH,LQ carries RoHS Compliant certification and shares identical ECCN (EAR99) and HTSUS classifications with the original part. Both maintain MSL 1 (Unlimited) moisture sensitivity levels.

Q: What is the availability status of the substitute part?

A: The TPN3300ANH,LQ is classified as Active product status with 6,300 pieces in stock. The original TPCP8003-H(TE85L,F is obsolete with 870 pieces remaining in inventory.

Q: Are there thermal performance differences between the two packages?

A: The 8-TSON Advance package of the substitute part provides enhanced thermal performance with 27W (Tc) power dissipation capability compared to 840mW (Ta) for the original. The larger package footprint (3.3x3.3 versus 2.9x2.4) facilitates improved heat dissipation.

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