TPCC8002-H(TE12L,Q Equivalent & Substitute Parts

Part Overview

The TPCC8002-H(TE12L,Q is an N-Channel 30V 22A MOSFET manufactured by Toshiba Semiconductor and Storage in the U-MOSV-H series. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part operates as a surface mount 8-TSON Advance package with 700mW (Ta) and 30W (Tc) power dissipation ratings, suitable for switching applications requiring moderate current handling at 30V drain-source voltage levels.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	22	A (Ta)
Rds On (Max) @ Id, Vgs	8.3	mOhm @ 11A, 10V
Gate Threshold Voltage Vgs(th) (Max)	2.5	V @ 1mA
Gate Charge (Qg) (Max)	27	nC @ 10V
Input Capacitance (Ciss) (Max)	2500	pF @ 10V
Power Dissipation (Max)	700 (Ta), 30 (Tc)	mW, W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package	8-TSON Advance (3.3x3.3)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the TPCC8002-H(TE12L,Q is determined by the following critical parameters: N-Channel FET topology, 30V Vdss rating, continuous drain current capability, Rds On characteristics, gate charge, and surface mount packaging compatibility. Substitute parts must maintain the 30V Vdss specification and support equivalent or higher continuous drain current ratings to ensure functional compatibility in the target application circuit.

The substitute parts are grouped into two categories:

Direct Substitutes (Active Status): Parts with comparable current ratings (20A–22A range) and similar Rds On performance, maintaining near-equivalent thermal and switching characteristics.

Functional Alternatives (Active Status): Parts with lower current ratings (7.2A–14A) or different package geometries that satisfy 30V Vdss requirements but with trade-offs in current capacity or thermal performance. These alternatives are suitable for applications with reduced current demands or where package constraints permit alternative form factors.

All substitute parts listed maintain N-Channel MOSFET topology, 30V Vdss rating, surface mount configuration, and MSL 1 moisture sensitivity classification.

Parameter Comparison

Parameter	TPCC8002-H(TE12L,Q	TPN8R903NL,LQ	CSD17308Q3	CSD17551Q3A	NTTFS4C13NTAG	RQ3E120BNTB
Manufacturer	Toshiba	Toshiba	Texas Instruments	Texas Instruments	onsemi	Rohm
Product Status	Obsolete	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	30V	30V	30V	30V	30V	30V
Continuous Drain Current (Id) @ 25°C	22A (Ta)	20A (Tc)	14A (Ta), 44A (Tc)	12A (Tc)	7.2A (Ta)	12A (Ta)
Rds On (Max) @ Id, Vgs	8.3 mOhm @ 11A, 10V	8.9 mOhm @ 10A, 10V	10.3 mOhm @ 10A, 8V	9 mOhm @ 11A, 10V	9.4 mOhm @ 30A, 10V	9.3 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	2.3V @ 100µA	1.8V @ 250µA	2.1V @ 250µA	2.1V @ 250µA	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10V	9.8 nC @ 4.5V	5.1 nC @ 4.5V	7.8 nC @ 4.5V	7.8 nC @ 4.5V	29 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 10V	820 pF @ 15V	700 pF @ 15V	1370 pF @ 15V	770 pF @ 15V	1500 pF @ 15V
Power Dissipation (Max)	700mW (Ta), 30W (Tc)	700mW (Ta), 22W (Tc)	2.7W (Ta)	2.6W (Ta)	780mW (Ta), 21.5W (Tc)	2W (Ta)
Operating Temperature (TJ)	150°C	150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package	8-TSON Advance (3.3x3.3)	8-TSON Advance (3.1x3.1)	8-VSON-CLIP (3.3x3.3)	8-VSONP (3x3.3)	8-WDFN (3.3x3.3)	8-HSMT (3.2x3)
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
RoHS Status	—	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TPN8R903NL,LQ (Toshiba): This part represents the closest direct substitute, maintaining Toshiba manufacturing continuity with active product status. The 20A continuous drain current (Tc) is marginally lower than the original 22A (Ta), but Rds On performance (8.9 mOhm @ 10A, 10V) remains comparable. Gate charge is significantly reduced (9.8 nC @ 4.5V), offering improved switching efficiency. The 8-TSON Advance package (3.1x3.1) is geometrically similar to the original (3.3x3.3), with minor footprint differences. RoHS compliance and unlimited MSL rating support modern manufacturing standards. Recommended for direct replacement in applications where the current rating differential is acceptable.

CSD17308Q3 (Texas Instruments): This NexFET™ series device offers the lowest gate charge (5.1 nC @ 4.5V) and reduced input capacitance (700 pF @ 15V), enabling faster switching performance. Continuous drain current is 14A (Ta) or 44A (Tc), providing flexibility depending on thermal management. Rds On is 10.3 mOhm @ 10A, 8V. The 8-VSON-CLIP package (3.3x3.3) matches the original footprint dimensions. Extended operating temperature range (-55°C ~ 150°C) and ROHS3 compliance support demanding applications. Suitable for designs prioritizing switching speed and thermal performance over maximum current capacity.

CSD17551Q3A (Texas Instruments): Another NexFET™ option with 12A (Tc) continuous drain current and 9 mOhm Rds On @ 11A, 10V. Gate charge (7.8 nC @ 4.5V) and input capacitance (1370 pF @ 15V) provide moderate switching characteristics. The 8-VSONP package (3x3.3) differs slightly in geometry. Extended temperature range and ROHS3 compliance are provided. Applicable to applications with reduced current requirements and standard switching speed demands.

NTTFS4C13NTAG (onsemi): This part features the lowest continuous drain current (7.2A Ta) among substitutes, limiting application scope to lower-current designs. Gate charge (7.8 nC @ 4.5V) and input capacitance (770 pF @ 15V) support efficient switching. Power dissipation (780mW Ta, 21.5W Tc) is comparable to the original. The 8-WDFN package (3.3x3.3) matches original footprint dimensions. Extended temperature range and ROHS3 compliance are supported. Suitable only for applications with current demands below 7.2A.

RQ3E120BNTB (Rohm Semiconductor): This part provides 12A continuous drain current (Ta) with 9.3 mOhm Rds On @ 12A, 10V, closely matching original gate threshold voltage (2.5V @ 1mA). Gate charge (29 nC @ 10V) and input capacitance (1500 pF @ 15V) are higher than the original, resulting in slower switching characteristics. The 8-HSMT package (3.2x3) differs in geometry from the original. ROHS3 compliance and extended temperature range are provided. Applicable to applications where current capacity is limited to 12A and switching speed is not critical.

All substitute parts maintain 30V Vdss rating, N-Channel topology, surface mount configuration, and MSL 1 classification. Selection should be based on specific application requirements for continuous drain current, switching speed, thermal performance, and package geometry constraints.

Frequently Asked Questions (FAQ)

Q: Can TPN8R903NL,LQ directly replace TPCC8002-H(TE12L,Q in all applications?

A: TPN8R903NL,LQ is suitable for most applications where the 20A (Tc) continuous drain current rating meets circuit requirements. The original part is rated 22A (Ta). Verify that your application's maximum current demand does not exceed 20A under the thermal conditions specified in your design. Rds On performance is comparable (8.9 mOhm vs. 8.3 mOhm), and the package footprint is geometrically similar (3.1x3.1 vs. 3.3x3.3).

Q: What is the primary difference between the Texas Instruments NexFET™ options (CSD17308Q3 and CSD17551Q3A)?

A: CSD17308Q3 offers higher continuous drain current (14A Ta, 44A Tc) with the lowest gate charge (5.1 nC @ 4.5V), enabling faster switching. CSD17551Q3A provides 12A (Tc) continuous drain current with slightly higher gate charge (7.8 nC @ 4.5V). Both share the same 30V Vdss rating and extended temperature range. Select CSD17308Q3 for applications requiring maximum current capacity and switching speed; select CSD17551Q3A for moderate current applications with standard switching requirements.

Q: Are package geometry differences between substitutes critical for PCB layout?

A: Package geometry differences are significant for PCB layout compatibility. The original TPCC8002-H(TE12L,Q uses 8-TSON Advance (3.3x3.3). TPN8R903NL,LQ uses 8-TSON Advance (3.1x3.1), a minor reduction. CSD17308Q3 uses 8-VSON-CLIP (3.3x3.3), matching original dimensions. CSD17551Q3A uses 8-VSONP (3x3.3), a smaller footprint. NTTFS4C13NTAG uses 8-WDFN (3.3x3.3), matching original dimensions. RQ3E120BNTB uses 8-HSMT (3.2x3), a different geometry. Verify PCB pad layouts and thermal via patterns before selecting a substitute with different package dimensions.

Q: Which substitute part offers the best thermal performance?

A: CSD17308Q3 provides the highest thermal capacity with 44A (Tc) continuous drain current, enabling superior heat dissipation under high-current conditions. NTTFS4C13NTAG and TPN8R903NL,LQ both support 21.5W and 22W (Tc) power dissipation respectively, comparable to the original 30W (Tc). For applications requiring maximum thermal performance, CSD17308Q3 is optimal. For applications matching the original thermal envelope, TPN8R903NL,LQ or NTTFS4C13NTAG are suitable.

Q: What compliance certifications do substitute parts carry?

A: TPN8R903NL,LQ carries RoHS Compliance certification. CSD17308Q3, CSD17551Q3A, NTTFS4C13NTAG, and RQ3E120BNTB all carry ROHS3 Compliance and REACH Unaffected certifications. All parts maintain MSL 1 (Unlimited) moisture sensitivity classification. All parts are classified as EAR99 for export control purposes and share HTSUS code 8541.29.0095. Verify compliance requirements for your specific application and region before final part selection.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the FET on and off. The original TPCC8002-H(TE12L,Q has 27 nC @ 10V. CSD17308Q3 has the lowest gate charge (5.1 nC @ 4.5V), enabling faster switching and reduced driver power consumption. TPN8R903NL,LQ (9.8 nC @ 4.5V) and NTTFS4C13NTAG (7.8 nC @ 4.5V) offer moderate reductions. RQ3E120BNTB (29 nC @ 10V) is comparable to the original. Lower gate charge reduces switching losses and allows higher switching frequencies. Verify that your gate driver circuit can supply the required charge current for your selected substitute part.

Q: Can NTTFS4C13NTAG be used in applications designed for 22A continuous current?

A: No. NTTFS4C13NTAG is rated for 7.2A (Ta) continuous drain current, significantly lower than the original 22A (Ta). Using this part in a 22A application would result in thermal runaway and device failure. NTTFS4C13NTAG is suitable only for applications with maximum continuous current demands below 7.2A. For applications requiring 20A or higher, select TPN8R903NL,LQ, CSD17308Q3, or CSD17551Q3A.

Q: What is the significance of the extended operating temperature range in Texas Instruments and onsemi parts?

A: CSD17308Q3, CSD17551Q3A, and NTTFS4C13NTAG specify operating temperature range of -55°C ~ 150°C (TJ), compared to 150°C (TJ) for the original and other substitutes. The extended lower temperature limit (-55°C) enables operation in cold environments and supports automotive and industrial applications with wider temperature specifications. If your application requires operation below 0°C, select a substitute with extended temperature range. For standard commercial applications, this difference is not critical.

Q: Are all substitute parts available in the same packaging options?

A: No. All substitute parts are available in surface mount configurations, but package types differ. The original uses 8-TSON Advance. Substitutes use 8-TSON Advance (TPN8R903NL,LQ), 8-VSON-CLIP (CSD17308Q3), 8-VSONP (CSD17551Q3A), 8-WDFN (NTTFS4C13NTAG), and 8-HSMT (RQ3E120BNTB). All are 8-pin packages with exposed pads for thermal management. Verify that your PCB design accommodates the selected package type before ordering. Some substitutes may require PCB layout modifications.

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