TPC817D C9G Equivalent & Substitute Parts

Part Overview

The TPC817D C9G is an optoisolator with transistor output manufactured by Taiwan Semiconductor Corporation. This component provides galvanic isolation rated at 5000Vrms with a single channel configuration in a 4-DIP package. The device features a current transfer ratio of 300% to 600% at 5mA input and supports output currents up to 50mA with a maximum output voltage of 80V.

The TPC817D C9G is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this optoisolator.

Substiute Parts

TPC817D C9G
Taiwan Semiconductor CorporationIn Stock: 1146TPC817D C9G Datasheet
TPC817D C9G
Current Part
EL817(D)-G
Everlight Electronics Co LtdIn Stock: 687EL817(D)-G Datasheet
EL817(D)-G
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Key Parameters

Parameter Value
Voltage - Isolation 5000Vrms
Number of Channels 1
Current Transfer Ratio (Min) 300% @ 5mA
Current Transfer Ratio (Max) 600% @ 5mA
Output Type Transistor
Voltage - Output (Max) 80V
Current - Output / Channel 50mA
Vce Saturation (Max) 200mV
Package / Case 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole
Operating Temperature Range -40°C ~ 100°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TPC817D C9G is determined by strict equivalence across the following critical parameters:

Isolation and Safety Ratings: The substitute part must maintain the 5000Vrms isolation voltage specification to preserve the galvanic isolation function in the application circuit.

Channel Configuration: The substitute must provide exactly 1 channel to match the single-channel architecture of the original part.

Current Transfer Ratio: The substitute must support the 300% to 600% current transfer ratio range at 5mA to ensure proper signal transmission and circuit operation.

Output Characteristics: The substitute must support transistor output type with maximum output voltage of 80V and output current capability of 50mA per channel.

Saturation Voltage: The substitute must maintain Vce saturation at 200mV maximum to preserve switching performance and power dissipation characteristics.

Package and Mounting: The substitute must use the 4-DIP (0.300", 7.62mm) package with through-hole mounting to ensure mechanical and electrical compatibility with existing PCB designs.

Compliance Standards: The substitute must maintain ROHS3 compliance and EAR99 classification to satisfy regulatory and export requirements.

Parameter Comparison

Parameter TPC817D C9G EL817(D)-G
Manufacturer Taiwan Semiconductor Corporation Everlight Electronics Co Ltd
Product Status Obsolete Active
Voltage - Isolation 5000Vrms 5000Vrms
Number of Channels 1 1
Current Transfer Ratio (Min) 300% @ 5mA 300% @ 5mA
Current Transfer Ratio (Max) 600% @ 5mA 600% @ 5mA
Output Type Transistor Transistor
Voltage - Output (Max) 80V 80V
Current - Output / Channel 50mA 50mA
Voltage - Forward (Vf) (Typ) 1.2V 1.2V
Vce Saturation (Max) 200mV 200mV
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN EAR99 EAR99

Engineering Selection Recommendations

The EL817(D)-G manufactured by Everlight Electronics Co Ltd is a direct substitute for the obsolete TPC817D C9G. Both components share identical electrical specifications across all critical parameters including isolation voltage, current transfer ratio, output voltage and current ratings, and saturation voltage.

The EL817(D)-G holds active product status, ensuring ongoing availability and supply chain support. Both parts maintain ROHS3 compliance and EAR99 classification, satisfying regulatory requirements without modification to existing compliance documentation.

The operating temperature range of the EL817(D)-G extends from -55°C to 110°C, providing a wider operational envelope compared to the TPC817D C9G range of -40°C to 100°C. This extended range does not restrict substitution and may provide additional design margin in temperature-sensitive applications.

Rise and fall time specifications differ slightly between the two parts. The TPC817D C9G specifies 4µs rise time and 3µs fall time, while the EL817(D)-G specifies 6µs rise time and 8µs fall time. These timing differences must be evaluated against specific application switching frequency and timing requirements.

The EL817(D)-G is supplied in tube packaging, whereas the original part packaging specification was not provided. Packaging format does not affect electrical or mechanical compatibility for through-hole PCB assembly.

Frequently Asked Questions (FAQ)

Q: Can the EL817(D)-G be used as a direct replacement for the TPC817D C9G in existing designs?

A: Yes. The EL817(D)-G meets all critical electrical specifications of the TPC817D C9G including isolation voltage, current transfer ratio, output voltage and current ratings, and saturation voltage. Both components use identical 4-DIP through-hole packaging. No circuit modifications are required for substitution.

Q: What are the key differences between these two optoisolators?

A: The primary differences are product status and timing characteristics. The TPC817D C9G is obsolete while the EL817(D)-G is active. The EL817(D)-G has slower rise and fall times (6µs and 8µs respectively versus 4µs and 3µs) and a wider operating temperature range (-55°C to 110°C versus -40°C to 100°C).

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both the TPC817D C9G and EL817(D)-G maintain ROHS3 compliance, EAR99 classification, and MSL 1 (Unlimited) moisture sensitivity rating. Substitution does not require changes to compliance documentation.

Q: How do the timing specifications affect circuit performance?

A: The EL817(D)-G has longer rise and fall times than the TPC817D C9G. Applications with high-frequency switching requirements or tight timing constraints must evaluate whether the 2µs to 5µs timing difference impacts circuit operation. Low-frequency applications are unaffected by this specification difference.

Q: Is the 4-DIP package identical between both parts?

A: Yes. Both components use the 4-DIP (0.300", 7.62mm) package with through-hole mounting. PCB footprints and assembly processes are identical. No layout modifications are necessary.

Q: What is the current transfer ratio specification and why is it important?

A: Both parts specify a current transfer ratio of 300% to 600% at 5mA input. This parameter defines the ratio of output collector current to input LED current. The matched specification ensures equivalent signal transmission and circuit gain characteristics.

Q: Can the EL817(D)-G handle the same output current as the TPC817D C9G?

A: Yes. Both components support 50mA maximum output current per channel with identical 80V maximum output voltage rating. Output power handling capability is equivalent.

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