TPC8092,LQ(S N-Channel MOSFET 30V 15A Equivalent & Substitute Parts

Part Overview

The TPC8092,LQ(S is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 30V drain-to-source voltage with 15A continuous drain current at 25°C. This device is packaged in an 8-SOP surface mount configuration and is classified as obsolete. Due to its obsolete product status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and maintenance applications.

Substiute Parts

TPC8092,LQ(S

Toshiba Semiconductor and StorageIn Stock: 993TPC8092,LQ(S Datasheet

Current PartRFQ

TPN8R903NL,LQ

Toshiba Semiconductor and StorageIn Stock: 13760TPN8R903NL,LQ Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TPC8092,LQ(S is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Minimum 30V rating required
• Continuous Drain Current (Id): Minimum 15A at 25°C required
• Gate Threshold Voltage (Vgs(th)): Maximum 2.3V @ 200µA or lower
• Maximum Gate Voltage (Vgs): ±20V or greater
• On-State Resistance (Rds On): 9mOhm or lower at specified conditions

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Environmental Compliance: RoHS Compliant status required
• Moisture Sensitivity Level: MSL 1 (Unlimited) required

The substitute part TPN8R903NL,LQ meets all electrical and mechanical compatibility requirements, with enhanced performance characteristics in current rating and power dissipation capacity.

Parameter Comparison

Engineering Selection Recommendations

The TPN8R903NL,LQ serves as a direct substitute for the obsolete TPC8092,LQ(S based on the following engineering criteria:

Electrical Equivalence: The substitute part maintains identical drain-to-source voltage rating (30V) and exceeds the minimum continuous drain current requirement (20A versus 15A). On-state resistance is equivalent or superior (8.9mOhm versus 9mOhm), and gate threshold voltage remains consistent at 2.3V maximum. Maximum gate voltage rating is identical at ±20V.

Compliance and Certification: Both parts carry RoHS Compliant status and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with current manufacturing and environmental standards.

Product Availability: The TPN8R903NL,LQ is classified as Active product status with 13,650 pieces in stock, compared to the obsolete TPC8092,LQ(S with 977 pieces remaining. This availability differential supports long-term design continuity and supply chain reliability.

Package Consideration: The substitute part uses an 8-TSON Advance (3.1x3.1) package versus the original 8-SOIC package. PCB layout modifications are required to accommodate the different package footprint and pin configuration.

Frequently Asked Questions (FAQ)

Q: Can the TPN8R903NL,LQ directly replace the TPC8092,LQ(S without circuit modifications?

A: Electrical substitution is valid based on voltage, current, and threshold voltage parameters. However, package geometry differs (8-TSON Advance versus 8-SOIC), requiring PCB layout redesign and footprint changes. Gate charge characteristics differ (9.8nC versus 25nC), which may affect gate drive circuit timing in high-frequency applications.

Q: What is the significance of the different current ratings (15A versus 20A)?

A: The substitute part TPN8R903NL,LQ is rated for 20A continuous drain current at case temperature (Tc), exceeding the original 15A rating at ambient temperature (Ta). This provides additional current capacity margin and improved thermal performance, making it suitable for applications requiring the original 15A specification.

Q: How do the package differences impact design implementation?

A: The TPC8092,LQ(S uses an 8-SOIC package (0.154" width, 3.90mm), while the TPN8R903NL,LQ uses an 8-TSON Advance package (3.1x3.1mm). These are physically incompatible packages requiring separate PCB designs, different solder reflow profiles, and modified thermal management approaches. The TSON package typically offers superior thermal performance due to its exposed pad design.

Q: Are there thermal performance differences between these parts?

A: The substitute part specifies power dissipation of 700mW at ambient temperature (Ta) and 22W at case temperature (Tc), compared to the original 1W at ambient temperature. The TSON package with exposed thermal pad provides significantly better heat dissipation characteristics, supporting higher power applications.

Q: What is the impact of reduced gate charge on circuit design?

A: The substitute part has lower gate charge (9.8nC at 4.5V versus 25nC at 10V), resulting in faster switching transitions and reduced gate drive power requirements. This may improve efficiency in switching applications but requires verification that existing gate drive circuits can accommodate the faster switching characteristics.

Q: Is the substitute part suitable for all applications using the original TPC8092,LQ(S?

A: Electrical compatibility is established for applications requiring 30V, 15A N-Channel MOSFET functionality. However, package-specific considerations, thermal management differences, and gate drive timing must be evaluated for each application. High-frequency switching circuits and thermally constrained designs may benefit from the improved characteristics of the substitute part.