TPC8032-H(TE12LQM) Equivalent & Substitute Parts

Part Overview

The TPC8032-H(TE12LQM) is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 30V drain-to-source voltage with 15A continuous drain current in an 8-SOP surface mount package. This component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design support and procurement continuity. Active equivalent devices maintain the same electrical performance envelope while offering current manufacturing availability and extended product lifecycle support.

Substiute Parts

TPC8032-H(TE12LQM)

Toshiba Semiconductor and StorageIn Stock: 715TPC8032-H(TE12LQM) Datasheet

Current PartRFQ

FDS6670A

Fairchild SemiconductorIn Stock: 28925FDS6670A Datasheet

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FDS8896

onsemiIn Stock: 45430FDS8896 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the TPC8032-H(TE12LQM) is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current (Id): Must equal or exceed 15A at 25°C
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• On-State Resistance (Rds On): Must not exceed the specified maximum at rated conditions
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
• Operating Temperature Range: Must support 150°C maximum junction temperature

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Type: 8-SOIC configuration required for PCB footprint compatibility
• Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency

The identified substitute parts FDS6670A and FDS8896 meet the core electrical requirements of 30V Vdss and N-Channel MOSFET topology. Both devices are currently in active production status with established supply chains, addressing the obsolescence constraint of the original part.

Parameter Comparison

Engineering Selection Recommendations

FDS8896 (onsemi) is the primary substitute for the TPC8032-H(TE12LQM). This device matches the original part's 15A continuous drain current specification and provides superior on-state resistance performance (6 mOhm versus 6.5 mOhm). The FDS8896 is in active production status with established supply availability. The device carries ROHS3 compliance and REACH Unaffected status, supporting regulatory requirements. Moisture sensitivity level is specified as MSL 1 (Unlimited), matching the original part. The 8-SOIC package footprint is compatible with existing PCB designs, though physical dimensions differ slightly (0.154" versus 0.173" width).

FDS6670A (Fairchild Semiconductor) serves as a secondary substitute option. This device meets the 30V Vdss requirement but provides 13A continuous drain current, which is below the original 15A specification. The FDS6670A is suitable for applications where the 13A rating is sufficient or where thermal derating permits operation below the original current envelope. This part is in active production status. The on-state resistance specification (8 mOhm @ 13A, 10V) is higher than the original part, resulting in increased power dissipation in equivalent current conditions.

Both substitute parts are classified as EAR99 for export control purposes, matching the original part's regulatory classification.

Frequently Asked Questions (FAQ)

Q: Can the FDS8896 directly replace the TPC8032-H(TE12LQM) on existing PCBs?

A: The FDS8896 is electrically compatible and functionally equivalent. Both devices use 8-SOIC surface mount packages. Physical package dimensions differ slightly (0.154" width for FDS8896 versus 0.173" for TPC8032-H), but standard 8-SOIC footprints accommodate both variants. Verify PCB footprint specifications before implementation.

Q: What is the current rating difference between FDS6670A and the original part?

A: The FDS6670A is rated for 13A continuous drain current at 25°C, compared to 15A for the TPC8032-H(TE12LQM). Applications requiring the full 15A rating must use the FDS8896 or equivalent 15A-rated devices.

Q: Are there thermal performance differences between the substitute parts?

A: The FDS8896 provides lower on-state resistance (6 mOhm @ 15A, 10V) compared to the original part (6.5 mOhm @ 7.5A, 10V), resulting in reduced power dissipation at equivalent current levels. The FDS6670A exhibits higher on-state resistance (8 mOhm @ 13A, 10V), increasing thermal load in the same application.

Q: Do the substitute parts support the same gate drive voltage?

A: The TPC8032-H(TE12LQM) specifies Vgs(th) of 2.5V @ 1mA. The FDS8896 matches this specification at 2.5V @ 250µA. The FDS6670A specifies 3V @ 250µA, requiring verification of gate drive circuit compatibility. Both devices support ±20V maximum gate-source voltage.

Q: What is the moisture sensitivity level for the substitute parts?

A: The FDS8896 specifies MSL 1 (Unlimited), matching the original part. The FDS6670A does not provide MSL specification in available documentation. For applications with strict moisture sensitivity requirements, the FDS8896 is the preferred substitute.

Q: Are the substitute parts RoHS compliant?

A: The FDS8896 is ROHS3 compliant. The FDS6670A compliance status is not specified in available documentation. Both parts carry EAR99 export control classification, matching the original part.

Q: What is the gate charge difference between the original and substitute parts?

A: The TPC8032-H(TE12LQM) specifies 33 nC @ 10V. The FDS6670A specifies 30 nC @ 5V, and the FDS8896 specifies 67 nC @ 10V. Higher gate charge increases switching losses and gate drive power requirements. Verify gate drive circuit capability for the FDS8896 in high-frequency switching applications.