TPC6010-H(TE85L,FM N-Channel 60V 6.1A MOSFET Equivalent & Substitute Parts

Part Overview

The TPC6010-H(TE85L,FM is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 60V drain-to-source voltage with 6.1A continuous drain current at 25°C. This device is housed in a VS-6 (2.9x2.8) surface mount package and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	6.1	A
Rds On (Max) @ 10V Vgs	59	mOhm
Power Dissipation (Max)	700	mW
Gate Charge (Qg) @ 10V	12	nC
Input Capacitance (Ciss) @ 10V	830	pF
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-23-6 Thin, TSOT-23-6	—

Substitute Part Grouping Explanation

Substitute parts for the TPC6010-H(TE85L,FM are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 6.0A or greater at 25°C
On-State Resistance (Rds On): 60mOhm or lower at 10V Vgs
Power Dissipation: 700mW or greater
Gate Charge (Qg): 20nC or lower at 10V
Input Capacitance (Ciss): 850pF or lower at rated voltage
Mounting Type: Surface Mount
FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Considerations:

Package compatibility: SOT-23-6 variants and equivalent surface mount packages
Operating temperature range: 150°C or higher junction temperature
RoHS and MSL compliance status

Substitute parts are grouped into two categories: direct electrical equivalents with similar current ratings (6.0A or higher) and functional alternatives with slightly reduced current ratings (4.2A–4.3A) that maintain voltage and on-state resistance specifications within acceptable design margins.

Parameter Comparison

Parameter	TPC6010-H(TE85L,FM	SSM3K341R,LF	TPN1110ENH,L1Q	AO6420	FDC5612	FDC5661N-F085
Manufacturer	Toshiba	Toshiba	Toshiba	Alpha & Omega	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active	Active	Active
Vdss (V)	60	60	200	60	60	60
Id @ 25°C (A)	6.1	6.0	7.2	4.2	4.3	4.3
Rds On @ 10V Vgs (mOhm)	59	36	114	60	55	47
Power Dissipation (mW)	700	1200	700	2000	1600	1600
Gate Charge @ 10V (nC)	12	9.3	7	11.5	18	19
Ciss @ Rated Vds (pF)	830 @ 10V	550 @ 10V	600 @ 100V	540 @ 30V	650 @ 25V	763 @ 25V
Operating Temperature (°C)	150	-55 to 175	150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-23-6 Thin	SOT-23-3 Flat	8-TSON Advance	6-TSOP	SuperSOT-6	SuperSOT-6
RoHS Status	RoHS Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Electrical Equivalent (Preferred Category):

The SSM3K341R,LF from Toshiba Semiconductor and Storage is the primary substitute for the TPC6010-H(TE85L,FM. This part maintains the same 60V Vdss rating and delivers 6.0A continuous drain current, meeting the original specification. The SSM3K341R,LF features superior on-state resistance (36mOhm versus 59mOhm), lower gate charge (9.3nC versus 12nC), and reduced input capacitance (550pF versus 830pF). The device is classified as Active with ROHS3 compliance and unlimited moisture sensitivity rating. Package differences exist (SOT-23-3 Flat Leads versus SOT-23-6 Thin), requiring PCB layout verification.

Secondary Equivalent (Voltage-Rated Alternative):

The TPN1110ENH,L1Q from Toshiba Semiconductor and Storage provides higher voltage capability (200V Vdss) with 7.2A continuous drain current and 700mW power dissipation matching the original part. This device is suitable for applications requiring voltage margin above 60V. The higher gate charge (7nC) and lower input capacitance (600pF @ 100V) offer improved switching characteristics. Package format is 8-TSON Advance (3.1x3.1), requiring significant PCB redesign. Product status is Active with RoHS compliance.

Functional Alternatives (Current-Reduced Category):

The AO6420 from Alpha & Omega Semiconductor Inc., FDC5612 from onsemi, and FDC5661N-F085 from onsemi maintain 60V Vdss ratings with reduced continuous drain current (4.2A–4.3A). These parts are suitable for applications where the full 6.1A rating is not required. The FDC5661N-F085 includes AEC-Q101 automotive qualification, appropriate for automotive-grade applications. All three devices feature on-state resistance between 47–60mOhm and power dissipation between 1.6W–2.0W. All are classified as Active with ROHS3 compliance and unlimited MSL rating.

Compliance and Availability:

All substitute parts carry RoHS compliance (ROHS3 or equivalent) and MSL Level 1 (Unlimited) moisture sensitivity ratings. The SSM3K341R,LF and TPN1110ENH,L1Q are Toshiba products, maintaining manufacturer consistency. The onsemi and Alpha & Omega alternatives provide established supply chain options with high inventory availability (17,100–45,400 units in stock).

Frequently Asked Questions (FAQ)

Q: Can the SSM3K341R,LF directly replace the TPC6010-H(TE85L,FM without circuit modification?

A: The SSM3K341R,LF is electrically compatible with the TPC6010-H(TE85L,FM for voltage and current specifications. However, package differences exist: the SSM3K341R,LF uses SOT-23-3 Flat Leads versus the original SOT-23-6 Thin package. PCB layout and pin assignment verification is required before implementation.

Q: What is the significance of the lower on-state resistance (Rds On) in substitute parts?

A: Lower on-state resistance reduces power dissipation during conduction. The SSM3K341R,LF (36mOhm) dissipates less heat than the original TPC6010-H(TE85L,FM (59mOhm) at equivalent current levels. This improves thermal performance and may allow operation at higher ambient temperatures or higher current densities.

Q: Why does the TPN1110ENH,L1Q have a 200V Vdss rating instead of 60V?

A: The TPN1110ENH,L1Q is a higher-voltage-rated device suitable for applications requiring voltage margin or operation in circuits with transient overvoltage conditions. The 200V rating provides design flexibility but is not required for 60V nominal applications. This part is functionally compatible but not a direct replacement due to package format differences (8-TSON Advance).

Q: Are the onsemi FDC5612 and FDC5661N-F085 interchangeable?

A: Both onsemi parts share identical electrical specifications (60V Vdss, 4.3A Id, 55–47mOhm Rds On) and SuperSOT-6 packaging. The FDC5661N-F085 includes AEC-Q101 automotive qualification, making it suitable for automotive applications. The FDC5612 is the standard industrial-grade equivalent. Selection depends on application requirements.

Q: What are the package compatibility implications for PCB redesign?

A: The original TPC6010-H(TE85L,FM uses SOT-23-6 Thin (2.9x2.8mm). Substitute parts use different packages: SSM3K341R,LF (SOT-23-3 Flat), TPN1110ENH,L1Q (8-TSON Advance 3.1x3.1mm), AO6420 (6-TSOP), FDC5612 and FDC5661N-F085 (SuperSOT-6). Each package requires distinct PCB footprints, trace routing, and thermal management considerations. Pin assignments must be verified against schematic requirements.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (SSM3K341R,LF at 9.3nC, TPN1110ENH,L1Q at 7nC) reduces driver power consumption and enables faster switching. Higher gate charge (FDC5612 at 18nC, FDC5661N-F085 at 19nC) requires more driver current but may provide improved noise immunity in certain applications.

Q: What is the impact of input capacitance (Ciss) on circuit design?

A: Input capacitance affects gate drive circuit impedance and switching speed. The original TPC6010-H(TE85L,FM has 830pF Ciss at 10V. Substitute parts range from 540pF (AO6420) to 763pF (FDC5661N-F085). Lower capacitance reduces gate drive requirements and improves high-frequency switching performance. Higher capacitance may require stronger gate drivers but provides better EMI filtering.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts carry RoHS compliance certification (RoHS Compliant or ROHS3 Compliant). The original TPC6010-H(TE85L,FM is RoHS Compliant. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity ratings, suitable for standard storage and handling conditions.

Q: Which substitute part is recommended for new design implementations?

A: Selection depends on specific application requirements. For direct electrical equivalence with minimal circuit modification, the SSM3K341R,LF is recommended. For applications requiring higher voltage margin, the TPN1110ENH,L1Q is appropriate. For cost-optimized designs where full 6.1A current is not required, the FDC5612 or FDC5661N-F085 (automotive-qualified) provide viable alternatives. All parts are Active status with established supply availability.

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