TPAR3G S1G Avalanche Diode Equivalent & Substitute Parts

Part Overview

The TPAR3G S1G is an avalanche diode manufactured by Taiwan Semiconductor Corporation, rated for 400V DC reverse voltage with 3A average rectified current. This surface mount component in TO-277A packaging is designed for fast recovery applications with a reverse recovery time of 120 ns. The part is currently active in production with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for applications requiring 400V avalanche diode functionality in surface mount configurations.

Substiute Parts

TPAR3G S1G

Taiwan Semiconductor CorporationIn Stock: 1112TPAR3G S1G Datasheet

Current PartRFQ

AS3PG-M3/86A

Vishay General Semiconductor - Diodes DivisionIn Stock: 5433AS3PG-M3/86A Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of avalanche diodes is determined by matching the following critical electrical and mechanical parameters:

Voltage Rating: The DC reverse voltage (Vr) must be equal to or greater than the main part specification. Both the TPAR3G S1G and AS3PG-M3/86A are rated at 400V maximum reverse voltage, establishing voltage compatibility.

Current Rating: The average rectified current (Io) of a substitute must support the application requirements. The TPAR3G S1G is rated at 3A, while the AS3PG-M3/86A is rated at 2.1A. This represents a lower current capacity in the substitute.

Package and Mounting: Both parts utilize the TO-277A (SMPC) surface mount package with identical 3-PowerDFN case designation, ensuring mechanical and footprint compatibility.

Operating Temperature Range: Both parts operate across the identical junction temperature range of -55°C to 175°C.

Regulatory Compliance: Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL 1 rating, ensuring equivalent environmental and regulatory standing.

Recovery Characteristics: The TPAR3G S1G features fast recovery with 120 ns reverse recovery time, while the AS3PG-M3/86A operates with standard recovery characteristics at 1.2 µs. This represents a significant difference in switching speed performance.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection: The TPAR3G S1G remains the primary choice for applications requiring 3A average rectified current with fast recovery characteristics (120 ns). This part is actively produced by Taiwan Semiconductor Corporation with full ROHS3 compliance and unlimited moisture sensitivity rating.

Substitute Selection: The AS3PG-M3/86A from Vishay General Semiconductor - Diodes Division is electrically compatible at the 400V voltage rating and shares identical package, temperature range, and regulatory compliance status. However, this substitute operates at a reduced current rating of 2.1A and exhibits standard recovery characteristics (1.2 µs) rather than fast recovery. The AS3PG-M3/86A is suitable only for applications where the lower current capacity and extended recovery time do not compromise circuit performance.

Compliance Basis: Both parts maintain active production status, ROHS3 compliance, REACH unaffected designation, and MSL 1 rating. Selection between these parts should be based on application-specific current and switching speed requirements rather than regulatory or environmental considerations.

Frequently Asked Questions (FAQ)

Q: Can the AS3PG-M3/86A directly replace the TPAR3G S1G in all applications?

A: No. While both parts share the same 400V voltage rating, TO-277A package, and operating temperature range, the AS3PG-M3/86A has a lower current rating (2.1A versus 3A) and significantly longer reverse recovery time (1.2 µs versus 120 ns). Substitution is valid only for circuits where these reduced specifications do not exceed application limits.

Q: What is the significance of the reverse recovery time difference between these parts?

A: The TPAR3G S1G features fast recovery at 120 ns, while the AS3PG-M3/86A operates with standard recovery at 1.2 µs. This 10-fold difference affects switching speed and switching losses. Fast recovery diodes are preferred in high-frequency switching applications, while standard recovery diodes are suitable for lower-frequency circuits.

Q: Are both parts suitable for surface mount assembly?

A: Yes. Both the TPAR3G S1G and AS3PG-M3/86A utilize the TO-277A (SMPC) surface mount package with identical 3-PowerDFN case designation. They share the same footprint and mounting requirements.

Q: Do these parts have identical forward voltage characteristics?

A: No. The TPAR3G S1G exhibits 1.55V forward voltage at 3A, while the AS3PG-M3/86A exhibits 920 mV at 1.5A. These measurements are taken at different current levels, reflecting the different current ratings of each part.

Q: What is the moisture sensitivity rating for both parts?

A: Both parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions for storage, handling, or assembly processes.

Q: Are both parts RoHS compliant?

A: Yes. Both the TPAR3G S1G and AS3PG-M3/86A are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.