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TPAR3D Fast Recovery Rectifier Diode Equivalent & Substitute Parts
Part Overview
The TPAR3D is a 200V, 3A fast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation in a surface mount TO-277A (SMPC) package. This avalanche technology diode features a 120 nanosecond reverse recovery time and is designed for high-speed switching applications requiring reliable rectification performance.
The TPAR3D carries a Last Time Buy product status, indicating that this part number will no longer be manufactured after existing inventory is depleted. Identification of equivalent and substitute parts is necessary to ensure continued design support and procurement availability for new production runs and long-term supply chain planning.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) Maximum | 200 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) Maximum @ If | 1.55 @ 3 A | V |
| Reverse Recovery Time (trr) | 120 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 200 V |
| Capacitance @ Vr, F | 58 | pF @ 4V, 1MHz |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-277, 3-PowerDFN | — |
| Operating Temperature - Junction | -55 to 175 | °C |
| Technology | Avalanche | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the TPAR3D fast recovery rectifier diode are qualified based on the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) rating equal to or greater than 200V
- Current - Average Rectified (Io) rating equal to or greater than 3A
- Reverse Recovery Time (trr) within fast recovery classification (≤500ns)
- Surface mount package compatibility with TO-277 or equivalent 3-PowerDFN footprint
- Operating temperature range encompassing -55°C to 175°C minimum
- RoHS3 compliance and REACH unaffected status
Substitution Logic: Direct equivalents maintain identical electrical specifications across all critical parameters. Functional substitutes may exceed the original specifications in current rating or improve performance characteristics such as lower forward voltage or faster recovery time, provided they maintain backward compatibility with the original circuit design and package footprint.
Parameter Comparison
| Parameter | TPAR3D | TPAR3D S1G | TUAR4DH |
|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Voltage - DC Reverse (Vr) Maximum | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 3 A | 3 A | 4 A |
| Voltage - Forward (Vf) Maximum @ If | 1.55 V @ 3 A | 1.55 V @ 3 A | 1.4 V @ 4 A |
| Reverse Recovery Time (trr) | 120 ns | 120 ns | 150 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 200 V | 5 µA @ 200 V |
| Capacitance @ Vr, F | 58 pF @ 4V, 1MHz | 58 pF @ 4V, 1MHz | 31 pF @ 4V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN |
| Operating Temperature - Junction | -55 to 175 °C | -55 to 175 °C | -55 to 150 °C |
| Technology | Avalanche | Avalanche | Standard |
| Product Status | Last Time Buy | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
TPAR3D S1G - Direct Equivalent Substitute
The TPAR3D S1G is a direct electrical and mechanical equivalent to the TPAR3D. Both parts share identical specifications across all critical parameters: 200V reverse voltage rating, 3A average rectified current, 120 nanosecond reverse recovery time, and TO-277 surface mount package. The TPAR3D S1G maintains active product status with significantly higher inventory availability (10,139 pieces in stock versus 703 pieces for the TPAR3D). Both parts are ROHS3 compliant with MSL 1 rating and identical operating temperature ranges. This substitute provides seamless design continuity with no circuit modifications required.
TUAR4DH - Functional Substitute with Enhanced Specifications
The TUAR4DH is a functional substitute that exceeds the TPAR3D specifications in current capacity (4A versus 3A) and provides improved reverse leakage characteristics (5 µA versus 10 µA at 200V). The TUAR4DH maintains the same 200V reverse voltage rating and surface mount TO-277 package footprint. The reverse recovery time is 150 nanoseconds, which remains within the fast recovery classification and represents a 30 nanosecond increase from the TPAR3D. The TUAR4DH carries active product status with substantial inventory (6,786 pieces in stock) and includes AEC-Q101 automotive qualification. The maximum operating junction temperature is 150°C, which is 25°C lower than the TPAR3D. This substitute is suitable for applications where the higher current rating and improved leakage performance provide design margin, provided the reduced maximum junction temperature does not conflict with thermal design requirements.
Frequently Asked Questions (FAQ)
Q: Can TPAR3D S1G be used as a direct replacement for TPAR3D in existing designs?
A: Yes. The TPAR3D S1G is a direct equivalent with identical electrical and mechanical specifications. No circuit modifications, PCB layout changes, or thermal analysis updates are required. Both parts feature the same 200V rating, 3A current capacity, 120ns reverse recovery time, and TO-277 surface mount package.
Q: What are the key differences between TPAR3D and TUAR4DH?
A: The TUAR4DH provides higher current capacity (4A versus 3A), lower forward voltage drop (1.4V @ 4A versus 1.55V @ 3A), and improved reverse leakage (5 µA versus 10 µA). The reverse recovery time is slightly longer (150ns versus 120ns). The maximum junction temperature is 150°C for TUAR4DH compared to 175°C for TPAR3D. Both maintain the same 200V reverse voltage rating and TO-277 package.
Q: Is the TUAR4DH suitable for all TPAR3D applications?
A: The TUAR4DH is suitable for applications where the higher current rating does not create design conflicts and where the 150°C maximum junction temperature is acceptable. The 30 nanosecond increase in reverse recovery time must be evaluated against circuit timing requirements. The improved reverse leakage and lower forward voltage generally provide performance benefits in most rectification applications.
Q: Are all substitute parts available in the same packaging format?
A: Yes. The TPAR3D, TPAR3D S1G, and TUAR4DH are all supplied in surface mount TO-277 (3-PowerDFN) packages with identical footprints. All parts are available in Tape & Reel (TR) packaging format.
Q: What is the significance of the TPAR3D Last Time Buy status?
A: Last Time Buy status indicates that the TPAR3D will not be manufactured beyond existing inventory. The TPAR3D S1G provides an immediate direct equivalent with active manufacturing status. For new designs or long-term production planning, the TPAR3D S1G is the recommended transition path.
Q: Do all substitute parts meet the same compliance standards?
A: Yes. The TPAR3D, TPAR3D S1G, and TUAR4DH are all ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. The TUAR4DH additionally carries AEC-Q101 automotive qualification.
Q: Can the TUAR4DH be used in high-temperature applications requiring 175°C operation?
A: No. The TUAR4DH maximum junction temperature is 150°C. For applications requiring operation at 175°C, the TPAR3D or TPAR3D S1G must be used, as both support the full -55°C to 175°C operating range.
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