TP2640N3-G MOSFET P-Channel 400V Equivalent & Substitute Parts

Part Overview

The TP2640N3-G is a P-Channel MOSFET manufactured by Microchip Technology, rated for 400V drain-to-source voltage with 180mA continuous drain current at 25°C junction temperature. This device is packaged in a Through Hole TO-92-3 configuration and is classified as Obsolete product status. Due to its obsolete classification, identification of equivalent substitute components is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

TP2640N3-G

Microchip TechnologyIn Stock: 2126TP2640N3-G Datasheet

Current PartRFQ

TP2540N3-G

Microchip TechnologyIn Stock: 1876TP2540N3-G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TP2640N3-G is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same Drain to Source Voltage (Vdss) of 400V to ensure safe operation within the same circuit voltage envelope.

Channel Type and Technology: The substitute must be a P-Channel MOSFET using Metal Oxide technology to maintain functional equivalence in circuit topology.

Package and Mounting: The substitute must use the same Through Hole TO-92-3 package configuration to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Threshold Voltage (Vgs(th)): The substitute must operate within compatible gate threshold voltage ranges to ensure proper switching characteristics with existing drive circuitry.

Maximum Gate Voltage (Vgs): The substitute must support the same ±20V maximum gate voltage specification.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating temperature range.

Regulatory Compliance: The substitute must maintain ROHS3 compliance and REACH unaffected status.

The TP2540N3-G meets all these substitution criteria and is classified as an active product, providing improved component availability compared to the obsolete TP2640N3-G.

Parameter Comparison

Engineering Selection Recommendations

The TP2540N3-G is the manufacturer-recommended substitute for the obsolete TP2640N3-G. Both devices share identical voltage ratings (400V Vdss), channel type (P-Channel), technology platform (Metal Oxide MOSFET), package configuration (TO-92-3 Through Hole), and operating temperature range (-55°C to 150°C).

The TP2540N3-G is classified as an Active product, ensuring ongoing availability and supply chain continuity. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and production applications.

The TP2540N3-G exhibits lower continuous drain current (86mA versus 180mA) and reduced power dissipation (740mW versus 1W). These differences require circuit-level evaluation to confirm suitability for the specific application. The substitute part is appropriate for applications where the lower current and power ratings are compatible with design requirements.

Frequently Asked Questions (FAQ)

Q: Can the TP2540N3-G directly replace the TP2640N3-G in all applications?

A: Direct substitution is possible only when the application current requirements do not exceed 86mA continuous drain current at 25°C. The TP2540N3-G has a lower current rating (86mA) compared to the TP2640N3-G (180mA). Circuit analysis is required to confirm compatibility with specific application demands.

Q: Are the package dimensions identical between TP2640N3-G and TP2540N3-G?

A: Both parts use the TO-92-3 Through Hole package configuration. Physical dimensions and PCB footprints are identical, allowing direct mechanical substitution without layout modifications.

Q: What is the difference in gate threshold voltage between these parts?

A: The TP2640N3-G has a maximum gate threshold voltage of 2V @ 1mA, while the TP2540N3-G is rated at 2.4V @ 1mA. Both values fall within acceptable operating ranges for standard gate drive circuits. The difference is within typical process variation for this device family.

Q: Do both parts support the same maximum gate voltage?

A: Yes. Both the TP2640N3-G and TP2540N3-G support a maximum gate voltage of ±20V, ensuring compatibility with existing gate drive circuitry.

Q: What is the significance of the lower input capacitance in the TP2540N3-G?

A: The TP2540N3-G has lower input capacitance (125pF @ 25V) compared to the TP2640N3-G (300pF @ 25V). Lower capacitance results in faster switching response and reduced gate drive power requirements. This is a beneficial characteristic for high-frequency switching applications.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both parts are ROHS3 compliant and REACH unaffected. Regulatory status is identical, and both parts satisfy environmental and hazardous substance requirements for industrial and commercial applications.

Q: Why is the TP2640N3-G classified as Obsolete?

A: The TP2640N3-G is no longer in active production. The TP2540N3-G serves as the active replacement in the Microchip Technology product portfolio, providing equivalent functionality with improved availability.