TLV9004IDR Equivalent & Substitute Parts

Part Overview

The TLV9004IDR is a general purpose operational amplifier manufactured by Texas Instruments, featuring four independent circuits in a 14-SOIC surface mount package. This device is classified as an active linear amplifier with rail-to-rail output capability and is currently in active production status. The TLV9004IDR serves applications requiring low-power, general-purpose amplification across industrial, consumer, and embedded system designs. Substitute parts are identified based on matching functional architecture, package compatibility, and electrical parameter ranges that permit direct replacement in circuit applications.

Substiute Parts

TLV9004IDR
Texas InstrumentsIn Stock: 1975TLV9004IDR Datasheet
TLV9004IDR
Current Part
MCP6474-E/SL
Microchip TechnologyIn Stock: 4010MCP6474-E/SL Datasheet
MCP6474-E/SL
MFR Recommended
NCS20084DR2G
onsemiIn Stock: 31334NCS20084DR2G Datasheet
NCS20084DR2G
MFR Recommended
TSV324AIYDT
STMicroelectronicsIn Stock: 1481TSV324AIYDT Datasheet
TSV324AIYDT
MFR Recommended

Key Parameters

Parameter Value Unit
Amplifier Type General Purpose
Number of Circuits 4
Output Type Rail-to-Rail
Slew Rate 2 V/µs
Gain Bandwidth Product 1 MHz
Current - Input Bias 5 pA
Voltage - Input Offset 400 µV
Current - Supply 60 µA
Current - Output / Channel 40 mA
Voltage - Supply Span (Min) 1.8 V
Voltage - Supply Span (Max) 5.5 V
Operating Temperature -40 to 125 °C
Package / Case 14-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the TLV9004IDR are qualified based on the following criteria:

Mandatory Matching Parameters:

  • Four independent amplifier circuits in single package
  • Rail-to-rail output configuration
  • 14-SOIC surface mount package format
  • Operating temperature range of -40°C to 125°C
  • Supply voltage span compatibility (minimum 1.8 V to maximum 5.5 V)
  • ROHS3 compliance and active product status

Allowable Parameter Variations: Substitute parts may differ in amplifier topology (General Purpose versus CMOS), slew rate, gain bandwidth product, input bias current, input offset voltage, supply current, and output current per channel, provided these variations do not prevent functional operation in the target application circuit. Package mechanical dimensions and pinout must remain identical to ensure PCB compatibility without redesign.

Parameter Comparison

Parameter TLV9004IDR (Main) MCP6474-E/SL NCS20084DR2G TSV324AIYDT Unit
Manufacturer Texas Instruments Microchip Technology onsemi STMicroelectronics
Amplifier Type General Purpose CMOS General Purpose General Purpose
Number of Circuits 4 4 4 4
Output Type Rail-to-Rail Rail-to-Rail Rail-to-Rail Rail-to-Rail
Slew Rate 2 1.1 0.4 0.6 V/µs
Gain Bandwidth Product 1 2 1.2 1.4 MHz
Current - Input Bias 5 1 1 70 pA / nA
Voltage - Input Offset 400 1500 500 100 µV
Current - Supply 60 100 48 500 µA
Current - Output / Channel 40 32 15 80 mA
Voltage - Supply Span (Min) 1.8 2 1.8 2.5 V
Voltage - Supply Span (Max) 5.5 5.5 5.5 6 V
Operating Temperature -40 to 125 -40 to 125 -40 to 125 -40 to 125 °C
Package / Case 14-SOIC 14-SOIC 14-SOIC 14-SOIC
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active

Engineering Selection Recommendations

MCP6474-E/SL (Microchip Technology) This CMOS amplifier substitute offers higher gain bandwidth product (2 MHz versus 1 MHz) and lower input bias current (1 pA versus 5 pA). The MCP6474-E/SL maintains identical package format and supply voltage range compatibility. Slew rate is reduced to 1.1 V/µs, and input offset voltage increases to 1.5 mV. This substitute is suitable for applications where lower input bias current and higher bandwidth are beneficial, provided the reduced slew rate and increased offset voltage do not conflict with circuit requirements. Packaging is supplied in Tube format.

NCS20084DR2G (onsemi) This general purpose amplifier substitute maintains the same amplifier topology as the TLV9004IDR with identical supply voltage span (1.8 V to 5.5 V). The NCS20084DR2G features automotive-grade qualification (AEC-Q100) and lower supply current (48 µA versus 60 µA). Slew rate is reduced to 0.4 V/µs, and output current per channel is limited to 15 mA versus 40 mA. This substitute is appropriate for automotive applications and power-constrained designs where reduced output current capability is acceptable. Packaging is supplied in Tape & Reel format with unlimited moisture sensitivity rating.

TSV324AIYDT (STMicroelectronics) This general purpose amplifier substitute provides automotive-grade qualification (AEC-Q100) with the lowest input offset voltage (100 µV) among all substitutes. The TSV324AIYDT supports higher maximum supply voltage (6 V versus 5.5 V) and offers the highest output current per channel (80 mA). Supply current is significantly higher at 500 µA, and minimum supply voltage is raised to 2.5 V. This substitute is suitable for automotive applications requiring high output current capability and precision offset characteristics. Packaging is supplied in Cut Tape & Digi-Reel format.

All substitute parts maintain active product status and ROHS3 compliance, ensuring long-term availability and regulatory conformance.

Frequently Asked Questions (FAQ)

Q: Can the MCP6474-E/SL replace the TLV9004IDR in all applications?

A: The MCP6474-E/SL is mechanically and electrically compatible for direct PCB substitution due to identical 14-SOIC package format and overlapping supply voltage range. However, the reduced slew rate (1.1 V/µs versus 2 V/µs) and increased input offset voltage (1.5 mV versus 400 µV) may affect performance in high-speed or precision signal conditioning circuits. Circuit validation is necessary to confirm suitability for specific application requirements.

Q: What is the primary advantage of the NCS20084DR2G substitute?

A: The NCS20084DR2G is qualified to automotive standards (AEC-Q100) and consumes less supply current (48 µA versus 60 µA), making it suitable for automotive and battery-powered applications. The identical supply voltage span (1.8 V to 5.5 V) and general purpose amplifier topology ensure functional compatibility. The reduced output current per channel (15 mA) must be evaluated against application load requirements.

Q: Is the TSV324AIYDT suitable for low-voltage applications?

A: The TSV324AIYDT has a minimum supply voltage of 2.5 V, which is higher than the TLV9004IDR minimum of 1.8 V. This substitute is not suitable for applications requiring operation below 2.5 V supply voltage. For low-voltage designs, the TLV9004IDR or NCS20084DR2G are appropriate choices.

Q: Do all substitute parts use the same pinout as the TLV9004IDR?

A: All substitute parts are packaged in 14-SOIC format with identical mechanical dimensions (0.154" width, 3.90mm). The 14-SOIC package standard ensures pinout compatibility, allowing direct PCB substitution without layout modification.

Q: Which substitute offers the best precision characteristics?

A: The TSV324AIYDT provides the lowest input offset voltage (100 µV) compared to the TLV9004IDR (400 µV), making it the most precise option for applications requiring minimal DC offset. The MCP6474-E/SL offers the lowest input bias current (1 pA), which is advantageous for high-impedance signal sources.

Q: Are all substitutes compliant with environmental and regulatory standards?

A: All substitute parts are ROHS3 compliant and maintain active product status. The NCS20084DR2G and TSV324AIYDT carry automotive-grade qualification (AEC-Q100), suitable for automotive and harsh environment applications. Moisture sensitivity levels vary: MCP6474-E/SL and NCS20084DR2G have unlimited ratings, while TLV9004IDR and TSV324AIYDT have specified MSL ratings.

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