TLP626(D4-LF2,F) Equivalent & Substitute Parts

Part Overview

The TLP626(D4-LF2,F) is a through-hole optoisolator with transistor output manufactured by Toshiba Semiconductor and Storage. This component provides galvanic isolation rated at 5000Vrms with a single channel configuration in a 4-DIP package. The device is classified as obsolete, indicating discontinuation from active production. Identification of equivalent substitute parts is necessary to support ongoing system maintenance, repair operations, and new design implementations where this isolation topology is required.

Substiute Parts

TLP626(D4-LF2,F)
Toshiba Semiconductor and StorageIn Stock: 1197TLP626(D4-LF2,F) Datasheet
TLP626(D4-LF2,F)
Current Part
TLP620M(D4-LF1,E
Toshiba Semiconductor and StorageIn Stock: 1075TLP620M(D4-LF1,E Datasheet
TLP620M(D4-LF1,E
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number TLP626(D4-LF2,F)
Manufacturer Toshiba Semiconductor and Storage
Category Optoisolators
Product Status Obsolete
Number of Channels 1
Voltage - Isolation 5000Vrms
Current Transfer Ratio (Min) 100% @ 1mA
Current Transfer Ratio (Max) 1200% @ 1mA
Output Type Transistor
Voltage - Output (Max) 55V
Current - Output / Channel 50mA
Operating Temperature Range -55°C ~ 100°C
Mounting Type Through Hole
Package / Case 4-DIP (0.400", 10.16mm)
ECCN EAR99
HTSUS Code 8541.49.8000

Substitute Part Grouping Explanation

Substitution of the TLP626(D4-LF2,F) is determined by the following critical parameters:

Isolation Voltage: Both the main part and substitute maintain 5000Vrms isolation rating, ensuring equivalent galvanic separation capability.

Number of Channels: Single-channel configuration is preserved across all substitute options.

Output Type: Transistor output topology remains consistent, maintaining functional compatibility with existing circuit designs.

Input Type: Both AC and DC input capability is retained in substitute parts.

Current - Output / Channel: Maximum output current of 50mA is maintained, ensuring load-driving capability equivalence.

Compliance & Certifications: Both the main part and substitute share identical ECCN (EAR99) and HTSUS (8541.49.8000) classifications, confirming regulatory equivalence.

The primary distinction between the main part and substitute involves packaging format (through-hole versus surface mount), operating temperature range extension, and performance characteristics (switching speed, saturation voltage, and current transfer ratio specifications).

Parameter Comparison

Parameter TLP626(D4-LF2,F) TLP620M(D4-LF1,E)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Product Status Obsolete Active
Number of Channels 1 1
Voltage - Isolation 5000Vrms 5000Vrms
Current Transfer Ratio (Min) 100% @ 1mA 50% @ 5mA
Current Transfer Ratio (Max) 1200% @ 1mA 600% @ 5mA
Turn On / Turn Off Time (Typ) 10µs, 8µs 3µs, 3µs
Rise / Fall Time (Typ) 8µs, 8µs 2µs, 3µs
Input Type AC, DC AC, DC
Output Type Transistor Transistor
Voltage - Output (Max) 55V 80V
Current - Output / Channel 50mA 50mA
Voltage - Forward (Vf) (Typ) 1.15V 1.25V
Current - DC Forward (If) (Max) 60mA 50mA
Vce Saturation (Max) 400mV 300mV
Operating Temperature Range -55°C ~ 100°C -55°C ~ 125°C
Mounting Type Through Hole Surface Mount
Package / Case 4-DIP (0.400", 10.16mm) 4-SMD (0.300", 7.62mm)
ECCN EAR99 EAR99
HTSUS Code 8541.49.8000 8541.49.8000

Engineering Selection Recommendations

TLP620M(D4-LF1,E) as Primary Substitute:

The TLP620M(D4-LF1,E) is the manufacturer-recommended substitute for the obsolete TLP626(D4-LF2,F). This part maintains functional equivalence through identical isolation voltage (5000Vrms), single-channel configuration, transistor output topology, and maximum output current (50mA). Both components share identical export control classifications (ECCN: EAR99) and tariff codes (HTSUS: 8541.49.8000).

The TLP620M(D4-LF1,E) is classified as Active product status, ensuring continued availability and supply chain reliability. This substitute provides enhanced performance characteristics including faster switching times (3µs turn-on/off versus 10µs/8µs), improved saturation voltage (300mV versus 400mV), and extended operating temperature range (-55°C to 125°C versus -55°C to 100°C).

Packaging Consideration:

The primary distinction between these components is the mounting format. The TLP626(D4-LF2,F) utilizes through-hole 4-DIP packaging (0.400", 10.16mm), while the TLP620M(D4-LF1,E) employs surface-mount 4-SMD packaging (0.300", 7.62mm). Circuit board redesign and assembly process modification are required when transitioning between these mounting technologies.

Application Compatibility:

Selection of the TLP620M(D4-LF1,E) is appropriate for applications requiring equivalent isolation performance with improved switching characteristics and extended temperature operation. The higher maximum output voltage (80V versus 55V) provides additional design margin in high-voltage isolation applications.

Frequently Asked Questions (FAQ)

Q: Can the TLP620M(D4-LF1,E) directly replace the TLP626(D4-LF2,F) in existing circuit boards?

A: Direct board-level replacement is not possible due to different mounting technologies. The TLP626(D4-LF2,F) uses through-hole 4-DIP packaging, while the TLP620M(D4-LF1,E) uses surface-mount 4-SMD packaging. Circuit board redesign and remanufacturing are required.

Q: Are the isolation voltage ratings identical between these components?

A: Yes. Both the TLP626(D4-LF2,F) and TLP620M(D4-LF1,E) provide 5000Vrms isolation voltage, ensuring equivalent galvanic separation performance.

Q: What are the differences in switching performance?

A: The TLP620M(D4-LF1,E) provides faster switching characteristics with 3µs turn-on and turn-off times compared to 10µs and 8µs for the TLP626(D4-LF2,F). Rise and fall times are also improved (2µs/3µs versus 8µs/8µs). These faster transitions reduce propagation delay in signal isolation applications.

Q: Is the output current capability the same?

A: Yes. Both components support 50mA maximum output current per channel, maintaining equivalent load-driving capability.

Q: What is the significance of the extended temperature range in the substitute part?

A: The TLP620M(D4-LF1,E) operates across -55°C to 125°C, compared to -55°C to 100°C for the TLP626(D4-LF2,F). This 25°C extension at the upper temperature limit provides additional thermal margin for applications in elevated-temperature environments.

Q: Are export control classifications identical?

A: Yes. Both components share ECCN classification EAR99 and HTSUS code 8541.49.8000, confirming regulatory equivalence for export and tariff purposes.

Q: What is the current transfer ratio difference, and does it affect circuit design?

A: The TLP626(D4-LF2,F) specifies 100% to 1200% CTR at 1mA input, while the TLP620M(D4-LF1,E) specifies 50% to 600% CTR at 5mA input. These different measurement conditions reflect different device optimization. Circuit designs must account for the specific CTR characteristics of the selected component.

Q: Is the saturation voltage improvement significant?

A: The TLP620M(D4-LF1,E) provides 300mV maximum saturation voltage compared to 400mV for the TLP626(D4-LF2,F). This 100mV reduction decreases power dissipation in the output transistor, particularly beneficial in high-frequency switching applications.

Q: Can both components be used interchangeably in new designs?

A: New designs should utilize the TLP620M(D4-LF1,E) due to its active product status and superior performance characteristics. The TLP626(D4-LF2,F) is obsolete and should not be specified for new applications.

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