TLP626(BV-LF2,F) Equivalent & Substitute Parts

Part Overview

The TLP626(BV-LF2,F) is a through-hole optoisolator with transistor output manufactured by Toshiba Semiconductor and Storage. This component provides galvanic isolation up to 5000Vrms across a single channel in a 4-DIP package configuration. The part is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical isolation performance, output characteristics, and functional compatibility while accommodating modern packaging and manufacturing standards.

Substiute Parts

TLP626(BV-LF2,F)
Toshiba Semiconductor and StorageIn Stock: 890TLP626(BV-LF2,F) Datasheet
TLP626(BV-LF2,F)
Current Part
TLP620M(LF1,E
Toshiba Semiconductor and StorageIn Stock: 820TLP620M(LF1,E Datasheet
TLP620M(LF1,E
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Isolation 5000 Vrms
Number of Channels 1
Output Type Transistor
Current - Output / Channel 50 mA
Voltage - Output (Max) 55 V
Operating Temperature Range -55 to 100 °C
Input Type AC, DC
Package / Case 4-DIP
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the TLP626(BV-LF2,F) is determined by the following critical parameters:

Isolation Voltage: Both the main part and substitute must maintain 5000Vrms isolation rating to preserve circuit safety and regulatory compliance.

Output Configuration: Single-channel transistor output is required to match the functional interface of the original component.

Output Current Capacity: Maximum output current of 50mA per channel establishes the load-switching capability threshold.

Input Type Compatibility: AC and DC input acceptance ensures the substitute functions across the same signal domains.

Operating Temperature Range: The substitute must support the specified temperature envelope or exceed it to maintain performance across all operating conditions.

Isolation Category: Both components belong to the optoisolator transistor output category with identical isolation voltage specifications, establishing the primary substitution basis.

The TLP620M(LF1,E) qualifies as a manufacturer-recommended substitute by meeting all critical isolation, output, and functional parameters while transitioning from through-hole to surface-mount packaging.

Parameter Comparison

Parameter TLP626(BV-LF2,F) TLP620M(LF1,E) Unit
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Category Optoisolators Optoisolators
Number of Channels 1 1
Voltage - Isolation 5000 5000 Vrms
Output Type Transistor Transistor
Input Type AC, DC AC, DC
Current - Output / Channel 50 50 mA
Voltage - Output (Max) 55 80 V
Voltage - Forward (Vf) (Typ) 1.15 1.25 V
Vce Saturation (Max) 400 300 mV
Operating Temperature (Min) -55 -55 °C
Operating Temperature (Max) 100 125 °C
Mounting Type Through Hole Surface Mount
Package / Case 4-DIP (0.400", 10.16mm) 4-SMD (0.300", 7.62mm)
Product Status Obsolete Active
ECCN EAR99 EAR99
HTSUS 8541.49.8000 8541.49.8000

Engineering Selection Recommendations

Product Status Consideration: The TLP626(BV-LF2,F) is classified as obsolete. The TLP620M(LF1,E) is an active product from the same manufacturer, ensuring continued availability and manufacturing support for new production runs and design updates.

Electrical Compatibility: Both components maintain identical 5000Vrms isolation voltage, single-channel transistor output configuration, and 50mA output current capacity. The substitute provides enhanced maximum output voltage (80V versus 55V) and improved saturation characteristics (300mV versus 400mV), representing performance improvements within the same functional class.

Temperature Performance: The TLP620M(LF1,E) extends the maximum operating temperature to 125°C compared to 100°C in the original part, providing broader thermal operating margin.

Regulatory Compliance: Both components share identical ECCN (EAR99) and HTSUS (8541.49.8000) classifications, maintaining export and tariff compliance equivalence.

Packaging Transition: The primary design consideration is the shift from through-hole 4-DIP to surface-mount 4-SMD packaging. This transition requires PCB layout modification and assembly process adjustment but does not affect electrical functionality or isolation performance.

Frequently Asked Questions (FAQ)

Q: Can the TLP620M(LF1,E) directly replace the TLP626(BV-LF2,F) in existing through-hole PCB designs?

A: No. The TLP620M(LF1,E) uses surface-mount 4-SMD packaging while the original part uses through-hole 4-DIP packaging. PCB layout and footprint modifications are required. For through-hole designs requiring an active substitute, alternative through-hole optoisolators with matching 5000Vrms isolation and transistor output specifications must be evaluated.

Q: Are the isolation voltage ratings identical between these components?

A: Yes. Both the TLP626(BV-LF2,F) and TLP620M(LF1,E) provide 5000Vrms isolation voltage, meeting identical safety and regulatory requirements.

Q: What is the significance of the improved Vce saturation in the substitute part?

A: The TLP620M(LF1,E) exhibits lower saturation voltage (300mV maximum versus 400mV maximum), resulting in reduced power dissipation during transistor conduction and improved output switching efficiency.

Q: Does the extended temperature range of the TLP620M(LF1,E) affect substitution suitability?

A: The extended maximum operating temperature (125°C versus 100°C) represents an enhancement that does not restrict substitution. Applications operating within the original -55°C to 100°C range remain fully compatible.

Q: Are both components subject to the same export classifications?

A: Yes. Both components share identical ECCN (EAR99) and HTSUS (8541.49.8000) classifications, maintaining equivalent export control and tariff treatment.

Q: What design considerations apply when transitioning from 4-DIP to 4-SMD packaging?

A: Surface-mount 4-SMD packaging requires PCB footprint redesign, reflow soldering processes, and updated assembly procedures. Electrical functionality and isolation performance remain unchanged. Pin configuration and signal mapping must be verified against the respective datasheets.

Q: Is the current transfer ratio specification comparable between these parts?

A: The current transfer ratio specifications differ due to measurement conditions. The TLP626(BV-LF2,F) specifies 200% to 1200% at 1mA input, while the TLP620M(LF1,E) specifies 50% to 600% at 5mA input. Both ranges support typical optoisolator applications; specific circuit requirements must be evaluated against the respective operating conditions.

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