TLE2072IDRG4 Equivalent & Substitute Parts

Part Overview

The TLE2072IDRG4 is a J-FET input operational amplifier manufactured by Texas Instruments, configured as a dual-channel (2 circuit) device in an 8-SOIC surface mount package. This component is classified as obsolete, though 739 units remain in new original stock. The TLE2072IDRG4 is designed for applications requiring low input bias current, low input offset voltage, and moderate slew rate performance typical of precision J-FET amplifier designs.

Due to its obsolete product status, identification of functionally equivalent active alternatives is necessary for new designs, production continuity, and long-term component availability assurance. Substitute parts must maintain electrical compatibility across critical parameters including amplifier type, circuit count, package form factor, and operating specifications.

Key Parameters

Parameter	Value	Unit
Amplifier Type	J-FET	—
Number of Circuits	2	—
Slew Rate	45	V/µs
Gain Bandwidth Product	10	MHz
Current - Input Bias	1	pA
Voltage - Input Offset	300	µV
Current - Supply (x2 Channels)	3.1	mA
Current - Output / Channel	48	mA
Voltage - Supply Span (Min)	4.5	V
Voltage - Supply Span (Max)	38	V
Operating Temperature	-40 to 85	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the TLE2072IDRG4 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Amplifier Type: J-FET (required for input bias current and offset voltage characteristics)
Number of Circuits: 2 (dual-channel configuration)
Package / Case: 8-SOIC form factor (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage Supply Range: Minimum 4.5 V, Maximum 38 V (or compatible subset)
Operating Temperature Range: -40°C to 85°C (or compatible subset)

Secondary Compatibility Parameters:

Slew Rate: 45 V/µs (TLE2072IDRG4 baseline; substitutes may vary)
Gain Bandwidth Product: 10 MHz (TLE2072IDRG4 baseline; substitutes may vary)
Input Bias Current: 1 pA (TLE2072IDRG4 baseline; substitutes may vary)
Input Offset Voltage: 300 µV (TLE2072IDRG4 baseline; substitutes may vary)

Substitutes are grouped into two categories:

Category A - Direct Electrical Equivalents (J-FET Type, Active Status): Parts maintaining J-FET amplifier topology with active product status and compatible electrical specifications. These include TLE2072IDR (Texas Instruments), LT1057IS8, LT1057IS8#PBF, LT1057IS8#TRPBF, LT1057S8#PBF, LT1057S8#TRPBF, and LT1113CS8#TRPBF (Analog Devices Inc.).

Category B - Functional Alternatives (Different Amplifier Type, Active Status): Parts with different amplifier topology (General Purpose or Audio) but compatible package, circuit count, and surface mount configuration. These include LM358ADR2G (onsemi, General Purpose) and LM833DR2G / LM833DT (onsemi / STMicroelectronics, Audio).

Parameter Comparison

Parameter	TLE2072IDRG4	TLE2072IDR	LT1057IS8	LT1057S8#TRPBF	LM833DR2G	LM833DT	LM358ADR2G	LT1113CS8#TRPBF
Manufacturer	Texas Instruments	Texas Instruments	Analog Devices Inc.	Analog Devices Inc.	onsemi	STMicroelectronics	onsemi	Analog Devices Inc.
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
Amplifier Type	J-FET	J-FET	J-FET	J-FET	Audio	Audio	General Purpose	J-FET
Number of Circuits	2	2	2	2	2	2	2	2
Slew Rate (V/µs)	45	45	13	13	7	7	—	3.9
Gain Bandwidth Product (MHz)	10	10	5	5	15	15	1	5.6
Current - Input Bias (pA)	1	1	7	7	300	300	45	300
Voltage - Input Offset (µV)	300	300	220	220	300	300	2000	550
Current - Supply (mA)	3.1	3.1	1.7	1.7	4	4	0.8	5.3
Current - Output / Channel (mA)	48	48	—	—	29	37	40	—
Voltage - Supply Span Min (V)	4.5	4.5	20	20	10	5	3	9
Voltage - Supply Span Max (V)	38	38	36	36	36	30	32	40
Operating Temperature (°C)	-40 to 85	-40 to 85	-40 to 85	0 to 70	-40 to 85	-40 to 105	0 to 70	-40 to 85
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Inventory Status	739 Pcs	15322 Pcs	4307 Pcs	2090 Pcs	45855 Pcs	166607 Pcs	45400 Pcs	2432 Pcs

Engineering Selection Recommendations

Tier 1 - Recommended Primary Substitute:

TLE2072IDR (Texas Instruments) is the recommended primary substitute. This part maintains identical electrical specifications to the TLE2072IDRG4, including J-FET amplifier type, dual-channel configuration, 45 V/µs slew rate, 10 MHz gain bandwidth product, 1 pA input bias current, and 300 µV input offset voltage. The TLE2072IDR is active product status with 15,322 units in stock, ensuring long-term availability. Both parts are ROHS3 compliant, MSL 1 rated, and packaged in 8-SOIC form factor. The primary difference is packaging format (Cut Tape & Digi-Reel® versus the original specification), which does not affect electrical performance or PCB compatibility.

Tier 2 - J-FET Alternative Substitutes:

LT1057IS8, LT1057IS8#PBF, LT1057IS8#TRPBF, LT1057S8#PBF, and LT1057S8#TRPBF (Analog Devices Inc.) are active J-FET amplifiers with dual-channel 8-SOIC configuration. These parts exhibit lower slew rate (13 V/µs versus 45 V/µs) and lower gain bandwidth product (5 MHz versus 10 MHz), but maintain superior input bias current (7 pA versus 1 pA) and comparable input offset voltage (220 µV versus 300 µV). Operating temperature range varies: LT1057IS8 variants support -40°C to 85°C; LT1057S8#PBF and LT1057S8#TRPBF support 0°C to 70°C. Supply voltage range is narrower (20 V to 36 V versus 4.5 V to 38 V). These substitutes are suitable for applications where reduced slew rate and bandwidth are acceptable trade-offs for improved input bias current performance.

LT1113CS8#TRPBF (Analog Devices Inc.) is an active J-FET amplifier with dual-channel 8-SOIC configuration. This part exhibits significantly reduced slew rate (3.9 V/µs) and comparable gain bandwidth product (5.6 MHz), with higher input bias current (300 pA) and input offset voltage (550 µV). Supply voltage range is 9 V to 40 V. This substitute is suitable only for low-speed applications where slew rate and input offset voltage specifications are non-critical.

Tier 3 - Functional Alternative Substitutes:

LM833DR2G and LM833DT (onsemi / STMicroelectronics) are active audio amplifiers with dual-channel 8-SOIC configuration. These parts differ fundamentally in amplifier type (audio versus J-FET), resulting in higher input bias current (300 nA versus 1 pA) and identical input offset voltage (300 µV). Slew rate is lower (7 V/µs versus 45 V/µs); gain bandwidth product is higher (15 MHz versus 10 MHz). Supply voltage range is 10 V to 36 V (LM833DR2G) or 5 V to 30 V (LM833DT). These substitutes are suitable only for audio-frequency applications where J-FET input characteristics are not required.

LM358ADR2G (onsemi) is an active general-purpose amplifier with dual-channel 8-SOIC configuration. This part differs fundamentally in amplifier type (general purpose versus J-FET), resulting in significantly higher input bias current (45 nA versus 1 pA) and input offset voltage (2 mV versus 300 µV). Gain bandwidth product is substantially lower (1 MHz versus 10 MHz). Supply voltage range is 3 V to 32 V; operating temperature range is 0°C to 70°C. This substitute is suitable only for low-frequency, non-precision applications where J-FET input characteristics are not required.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and REACH unaffected status, ensuring regulatory compatibility with the original TLE2072IDRG4 specification.

Frequently Asked Questions (FAQ)

Q1: Can TLE2072IDR be used as a direct replacement for TLE2072IDRG4 in existing designs?

A: Yes. TLE2072IDR is electrically and functionally identical to TLE2072IDRG4. Both parts are J-FET dual-channel operational amplifiers with identical electrical specifications (45 V/µs slew rate, 10 MHz gain bandwidth product, 1 pA input bias current, 300 µV input offset voltage, 4.5 V to 38 V supply range, -40°C to 85°C operating temperature). Both are packaged in 8-SOIC form factor with identical pinout. The only difference is product status (active versus obsolete) and packaging format (Cut Tape & Digi-Reel® versus original specification). No circuit modifications are required.

Q2: What are the key differences between J-FET and audio amplifier substitutes?

A: J-FET amplifiers (TLE2072IDRG4, TLE2072IDR, LT1057 series, LT1113CS8#TRPBF) feature extremely low input bias current (1 to 300 pA range) and are suitable for high-impedance input applications. Audio amplifiers (LM833DR2G, LM833DT) feature higher input bias current (300 nA) and are optimized for audio-frequency bandwidth and slew rate performance. General-purpose amplifiers (LM358ADR2G) feature the highest input bias current (45 nA) and lowest bandwidth (1 MHz) and are suitable only for low-frequency applications. Selection depends on application requirements for input impedance, frequency response, and slew rate.

Q3: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in 8-SOIC surface mount package form factor, ensuring PCB compatibility. However, packaging formats (Cut Tape, Tube, Tape & Reel) vary by part number and manufacturer. Verify specific packaging availability with your supplier before design finalization. Packaging format does not affect electrical performance or PCB mounting compatibility.

Q4: What is the impact of reduced slew rate in LT1057 and LT1113 substitutes?

A: TLE2072IDRG4 features 45 V/µs slew rate; LT1057 series features 13 V/µs; LT1113CS8#TRPBF features 3.9 V/µs. Slew rate determines the maximum rate of output voltage change. Applications requiring fast transient response or high-frequency signal handling may be affected by reduced slew rate. For audio and low-frequency applications, reduced slew rate is typically not a limiting factor. Verify slew rate requirements in your specific application before substitution.

Q5: Can LM358ADR2G be used as a substitute for TLE2072IDRG4?

A: LM358ADR2G is not recommended as a substitute for TLE2072IDRG4 in precision applications. LM358ADR2G is a general-purpose amplifier with 45 nA input bias current (versus 1 pA for TLE2072IDRG4), 2 mV input offset voltage (versus 300 µV), and 1 MHz gain bandwidth product (versus 10 MHz). These differences make LM358ADR2G unsuitable for high-impedance input circuits, precision measurement applications, or applications requiring high-frequency response. LM358ADR2G is suitable only for low-frequency, non-precision applications.

Q6: What supply voltage range considerations apply to substitute selection?

A: TLE2072IDRG4 supports 4.5 V to 38 V supply range. LT1057 series supports narrower range (20 V to 36 V). LT1113CS8#TRPBF supports 9 V to 40 V. LM833 series supports 5 V to 36 V (LM833DT) or 10 V to 36 V (LM833DR2G). LM358ADR2G supports 3 V to 32 V. Verify that your circuit's supply voltage falls within the substitute part's specified range before selection. Parts with narrower supply ranges may not be suitable for applications requiring the full 4.5 V to 38 V range of the original TLE2072IDRG4.

Q7: Are there temperature range limitations with substitute parts?

A: TLE2072IDRG4 operates -40°C to 85°C. LT1057IS8 variants support -40°C to 85°C; LT1057S8 variants support 0°C to 70°C. LT1113CS8#TRPBF supports -40°C to 85°C. LM833DR2G supports -40°C to 85°C; LM833DT supports -40°C to 105°C. LM358ADR2G supports 0°C to 70°C. Applications requiring full -40°C to 85°C range must use substitutes with matching or wider temperature specifications. Verify temperature requirements before substitution.

Q8: Do all substitutes maintain ROHS3 compliance?

A: Yes. All recommended substitute parts (TLE2072IDR, LT1057 series, LT1113CS8#TRPBF, LM833 series, LM358ADR2G) are ROHS3 compliant with MSL 1 rating and REACH unaffected status, matching the original TLE2072IDRG4 specification. Regulatory compliance is maintained across all substitutes.

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