TLE2061IDR Equivalent & Substitute Parts

Part Overview

The TLE2061IDR is a J-FET input operational amplifier manufactured by Texas Instruments, housed in an 8-SOIC surface mount package. This single-circuit amplifier is designed for applications requiring low input bias current and low input offset voltage characteristics inherent to J-FET technology. The device operates across a wide supply voltage range of 7V to 36V and maintains active product status with full RoHS3 compliance. Substitute parts are necessary when addressing supply chain constraints, specific packaging requirements, circuit density needs, or performance parameter optimization for particular application demands.

Key Parameters

Parameter	Value	Unit
Amplifier Type	J-FET	—
Number of Circuits	1	—
Slew Rate	3.4	V/µs
Gain Bandwidth Product	2	MHz
Current - Input Bias	4	pA
Voltage - Input Offset	600	µV
Current - Supply	290	µA
Current - Output / Channel	80	mA
Voltage - Supply Span (Min)	7	V
Voltage - Supply Span (Max)	36	V
Operating Temperature	-40 to 85	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution logic for the TLE2061IDR is determined by the following critical parameters: amplifier type (J-FET vs. General Purpose), number of circuits per package, package form factor, supply voltage range compatibility, input bias current characteristics, and operating temperature range. The TLE2061IDR is a single-circuit J-FET amplifier in 8-SOIC packaging.

J-FET Amplifier Substitutes: Parts maintaining J-FET input architecture with compatible package and electrical specifications.

General Purpose Amplifier Substitutes: Parts with different amplifier topology but compatible package, supply range, and functional capability for applications not requiring J-FET-specific characteristics.

Package Compatibility: All listed substitutes maintain 8-SOIC or equivalent surface mount packaging suitable for the same PCB footprint, with the exception of NCS20071SN2T1G, which uses 5-TSOP packaging and requires footprint redesign.

Parameter Comparison

Parameter	TLE2061IDR	OP282GSZ-REEL	TS512IDT	NCS20071SN2T1G	LM258AWDT
Manufacturer	Texas Instruments	Analog Devices Inc.	STMicroelectronics	onsemi	STMicroelectronics
Amplifier Type	J-FET	J-FET	General Purpose	General Purpose	General Purpose
Number of Circuits	1	2	2	1	2
Slew Rate (V/µs)	3.4	9	1.5	2.4	0.6
Gain Bandwidth Product (MHz)	2	4	3	3.2	1.1
Current - Input Bias (pA/nA)	4 pA	3 pA	50 nA	2 nA	20 nA
Voltage - Input Offset (µV/mV)	600 µV	200 µV	500 µV	1.3 mV	1 mV
Current - Supply (µA)	290	210 (x2)	500 (x2)	465	700
Current - Output / Channel (mA)	80	10	23	65	60
Voltage - Supply Span Min (V)	7	9	3	2.7	3
Voltage - Supply Span Max (V)	36	36	30	36	30
Operating Temperature (°C)	-40 to 85	-40 to 85	-40 to 125	-40 to 125	-40 to 105
Package / Case	8-SOIC	8-SOIC	8-SOIC	5-TSOP	8-SOIC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

OP282GSZ-REEL (Analog Devices Inc.): This J-FET amplifier substitute maintains identical amplifier topology to the TLE2061IDR with superior slew rate (9V/µs vs. 3.4V/µs) and gain bandwidth product (4MHz vs. 2MHz). The OP282GSZ-REEL contains two circuits versus one in the TLE2061IDR, requiring only one circuit utilization. Supply voltage range (9V to 36V) is compatible with applications operating above 9V. Input bias current (3pA) and input offset voltage (200µV) are superior. Output current per channel (10mA) is lower than the TLE2061IDR (80mA), limiting high-current applications. Package is 8-SOIC, maintaining footprint compatibility. Product status is active with full RoHS3 compliance.

TS512IDT (STMicroelectronics): This general purpose amplifier substitute provides two circuits in 8-SOIC packaging. Supply voltage range (3V to 30V) is narrower than the TLE2061IDR maximum (36V). Slew rate (1.5V/µs) is lower, and gain bandwidth product (3MHz) is higher. Input bias current (50nA) is significantly higher than J-FET specifications. Operating temperature extends to 125°C. Automotive grade with AEC-Q100 qualification. Suitable for applications not requiring J-FET input characteristics and operating within 3V to 30V supply range.

NCS20071SN2T1G (onsemi): This general purpose amplifier features rail-to-rail output capability in 5-TSOP packaging, requiring PCB footprint redesign. Single circuit configuration matches the TLE2061IDR. Supply voltage range (2.7V to 36V) extends to lower voltages. Slew rate (2.4V/µs) and gain bandwidth product (3.2MHz) are comparable. Input bias current (2nA) is superior to J-FET specifications. Operating temperature extends to 125°C. Package change necessitates layout modification.

LM258AWDT (STMicroelectronics): This general purpose amplifier provides two circuits in 8-SOIC packaging. Supply voltage range (3V to 30V) is narrower than the TLE2061IDR. Slew rate (0.6V/µs) is significantly lower. Gain bandwidth product (1.1MHz) is lower. Input bias current (20nA) is higher than J-FET specifications. Automotive grade with AEC-Q100 qualification and extended operating temperature to 105°C. Suitable for cost-sensitive applications with lower performance requirements.

Frequently Asked Questions (FAQ)

Q: Can the OP282GSZ-REEL directly replace the TLE2061IDR in a single-circuit application?

A: The OP282GSZ-REEL contains two circuits while the TLE2061IDR contains one. Direct footprint replacement is possible using 8-SOIC packaging, but only one circuit would be utilized. The second circuit remains unused. Electrical parameters are compatible for applications operating at supply voltages of 9V or higher.

Q: What is the primary difference between J-FET and General Purpose amplifier substitutes?

A: J-FET amplifiers (TLE2061IDR, OP282GSZ-REEL) feature extremely low input bias current (measured in picoamperes) and are suitable for high-impedance signal sources. General Purpose amplifiers (TS512IDT, NCS20071SN2T1G, LM258AWDT) have higher input bias current (measured in nanoamperes) and are suitable for lower-impedance applications. Selection depends on source impedance requirements.

Q: Is the NCS20071SN2T1G package compatible with existing TLE2061IDR PCB layouts?

A: No. The NCS20071SN2T1G uses 5-TSOP (SOT-23-5) packaging while the TLE2061IDR uses 8-SOIC packaging. PCB footprint redesign is required. The other three substitutes (OP282GSZ-REEL, TS512IDT, LM258AWDT) maintain 8-SOIC packaging and are footprint-compatible.

Q: Which substitute is suitable for applications requiring supply voltages above 30V?

A: Only the OP282GSZ-REEL and NCS20071SN2T1G support the full 36V maximum supply voltage of the TLE2061IDR. The TS512IDT and LM258AWDT are limited to 30V maximum supply voltage.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts (OP282GSZ-REEL, TS512IDT, NCS20071SN2T1G, LM258AWDT) are RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited), matching the TLE2061IDR compliance status.

Q: Which substitute offers the lowest input bias current?

A: The NCS20071SN2T1G offers the lowest input bias current at 2nA, followed by the OP282GSZ-REEL at 3pA. The TLE2061IDR specifies 4pA. General purpose substitutes (TS512IDT at 50nA, LM258AWDT at 20nA) have significantly higher input bias current.

Q: Can the LM258AWDT be used in applications requiring extended operating temperature range?

A: The LM258AWDT operates from -40°C to 105°C, extending 20°C above the TLE2061IDR specification (-40°C to 85°C). However, the TS512IDT and NCS20071SN2T1G extend to 125°C, providing greater temperature margin.

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