TL062ACDRE4 Equivalent & Substitute Parts

Part Overview

The TL062ACDRE4 is a J-FET input operational amplifier featuring two independent circuits in an 8-SOIC surface mount package. This device is designed for applications requiring low input bias current and high input impedance characteristics typical of J-FET amplifier architectures. The TL062ACDRE4 is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Substiute Parts

TL062ACDRE4
Texas InstrumentsIn Stock: 781TL062ACDRE4 Datasheet
TL062ACDRE4
Current Part
TL062ACDR
Texas InstrumentsIn Stock: 1759TL062ACDR Datasheet
TL062ACDR
MFR Recommended
TL062ACDT
STMicroelectronicsIn Stock: 3147TL062ACDT Datasheet
TL062ACDT
Direct
TL062ID
STMicroelectronicsIn Stock: 4533TL062ID Datasheet
TL062ID
Upgrade
TL062IDT
STMicroelectronicsIn Stock: 7146TL062IDT Datasheet
TL062IDT
Upgrade
ADA4062-2ARZ
Analog Devices Inc.In Stock: 3250ADA4062-2ARZ Datasheet
ADA4062-2ARZ
MFR Recommended
ADA4062-2ARZ-R7
Analog Devices Inc.In Stock: 17926ADA4062-2ARZ-R7 Datasheet
ADA4062-2ARZ-R7
MFR Recommended
ADA4062-2BRZ
Analog Devices Inc.In Stock: 930ADA4062-2BRZ Datasheet
ADA4062-2BRZ
MFR Recommended
AS358MTR-E1
Diodes IncorporatedIn Stock: 264218AS358MTR-E1 Datasheet
AS358MTR-E1
MFR Recommended
LM158DT
STMicroelectronicsIn Stock: 52673LM158DT Datasheet
LM158DT
MFR Recommended
LM258AWDT
STMicroelectronicsIn Stock: 48444LM258AWDT Datasheet
LM258AWDT
MFR Recommended
LM258D
STMicroelectronicsIn Stock: 3255LM258D Datasheet
LM258D
MFR Recommended
LM258DR2G
onsemiIn Stock: 505253LM258DR2G Datasheet
LM258DR2G
MFR Recommended
LM258DT
STMicroelectronicsIn Stock: 125329LM258DT Datasheet
LM258DT
MFR Recommended
LM258WDT
STMicroelectronicsIn Stock: 51741LM258WDT Datasheet
LM258WDT
MFR Recommended
LM258WYDT
STMicroelectronicsIn Stock: 10422LM258WYDT Datasheet
LM258WYDT
MFR Recommended
LM258YDT
STMicroelectronicsIn Stock: 42694LM258YDT Datasheet
LM258YDT
MFR Recommended
LM2904AQS-13
Diodes IncorporatedIn Stock: 12166LM2904AQS-13 Datasheet
LM2904AQS-13
MFR Recommended
LM2904D
STMicroelectronicsIn Stock: 105454LM2904D Datasheet
LM2904D
MFR Recommended
LM2904DT
Rohm SemiconductorIn Stock: 125452LM2904DT Datasheet
LM2904DT
MFR Recommended
LM2904EDR2G
onsemiIn Stock: 2893LM2904EDR2G Datasheet
LM2904EDR2G
MFR Recommended
LM2904VDR2G
onsemiIn Stock: 48760LM2904VDR2G Datasheet
LM2904VDR2G
MFR Recommended
LM2904WDT
Rohm SemiconductorIn Stock: 3140LM2904WDT Datasheet
LM2904WDT
MFR Recommended
LM2904WHDT
STMicroelectronicsIn Stock: 2810LM2904WHDT Datasheet
LM2904WHDT
MFR Recommended
LM2904WHYST
STMicroelectronicsIn Stock: 45625LM2904WHYST Datasheet
LM2904WHYST
MFR Recommended
LM2904WYDT
STMicroelectronicsIn Stock: 52757LM2904WYDT Datasheet
LM2904WYDT
MFR Recommended
LM2904YDT
STMicroelectronicsIn Stock: 104422LM2904YDT Datasheet
LM2904YDT
MFR Recommended
LM358AD
STMicroelectronicsIn Stock: 3793LM358AD Datasheet
LM358AD
MFR Recommended
LM358ADR2G
onsemiIn Stock: 45487LM358ADR2G Datasheet
LM358ADR2G
MFR Recommended
LM358ADT
STMicroelectronicsIn Stock: 122315LM358ADT Datasheet
LM358ADT
MFR Recommended
LM358D
STMicroelectronicsIn Stock: 10422LM358D Datasheet
LM358D
MFR Recommended
LM358DT
Rohm SemiconductorIn Stock: 505434LM358DT Datasheet
LM358DT
MFR Recommended
LM358S-13
Diodes IncorporatedIn Stock: 20509LM358S-13 Datasheet
LM358S-13
MFR Recommended
LM358YDT
STMicroelectronicsIn Stock: 40258LM358YDT Datasheet
LM358YDT
MFR Recommended
LM833DT
STMicroelectronicsIn Stock: 166636LM833DT Datasheet
LM833DT
MFR Recommended
MC1458DT
STMicroelectronicsIn Stock: 1662MC1458DT Datasheet
MC1458DT
MFR Recommended
MC33172DR2G
onsemiIn Stock: 25376MC33172DR2G Datasheet
MC33172DR2G
MFR Recommended
MC33172VDR2G
onsemiIn Stock: 2433MC33172VDR2G Datasheet
MC33172VDR2G
MFR Recommended
NCV2904DR2G
onsemiIn Stock: 655406NCV2904DR2G Datasheet
NCV2904DR2G
MFR Recommended
TL062BCDT
STMicroelectronicsIn Stock: 12771TL062BCDT Datasheet
TL062BCDT
MFR Recommended
TL062CDT
STMicroelectronicsIn Stock: 147221TL062CDT Datasheet
TL062CDT
MFR Recommended
TL072CDT
STMicroelectronicsIn Stock: 203221TL072CDT Datasheet
TL072CDT
MFR Recommended

Key Parameters

Parameter Value
Amplifier Type J-FET
Number of Circuits 2
Slew Rate 3.5 V/µs
Gain Bandwidth Product 1 MHz
Current - Input Bias 30 pA
Voltage - Input Offset 3 mV
Current - Supply 200 µA (x2 Channels)
Voltage - Supply Span (Min) 10 V
Voltage - Supply Span (Max) 30 V
Operating Temperature 0°C ~ 70°C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the TL062ACDRE4 is determined by the following critical parameters: amplifier type (J-FET), number of circuits (2), package type (8-SOIC), and electrical specifications including slew rate, gain bandwidth product, input bias current, input offset voltage, supply current, and supply voltage range.

Direct Equivalents maintain identical electrical specifications and J-FET architecture, differing only in packaging format or product status. These parts are pin-compatible and functionally interchangeable without circuit modification.

Upgraded Alternatives provide enhanced performance characteristics such as extended operating temperature range, improved input bias current specifications, or expanded supply voltage range, while maintaining the same package and core J-FET amplifier topology.

Functional Alternatives offer general-purpose amplifier solutions with different amplifier types (such as general-purpose rather than J-FET) but maintain compatibility through identical package geometry, pin count, and similar electrical performance within acceptable application parameters.

Parameter Comparison

Part Number Manufacturer Amplifier Type Slew Rate (V/µs) GBW (MHz) Input Bias (pA/nA) Input Offset (mV/µV) Supply Current (µA) Voltage Min (V) Voltage Max (V) Temp Range (°C) Product Status
TL062ACDRE4 Texas Instruments J-FET 3.5 1 30 pA 3 mV 200 10 30 0 ~ 70 Discontinued
TL062ACDR Texas Instruments J-FET 3.5 1 30 pA 3 mV 200 10 30 0 ~ 70 Active
TL062ACDT STMicroelectronics J-FET 3.5 1 30 nA 3 mV 200 6 36 0 ~ 70 Active
TL062ID STMicroelectronics J-FET 3.5 1 30 pA 3 mV 200 6 36 -40 ~ 105 Active
TL062IDT STMicroelectronics J-FET 3.5 1 30 pA 3 mV 200 6 36 -40 ~ 105 Active
ADA4062-2ARZ Analog Devices Inc. J-FET 3.3 1.4 2 pA 750 µV 165 8 36 -40 ~ 125 Active
ADA4062-2ARZ-R7 Analog Devices Inc. J-FET 3.3 1.4 2 pA 750 µV 165 8 36 -40 ~ 125 Active
ADA4062-2BRZ Analog Devices Inc. J-FET 3.3 1.4 2 pA 500 µV 165 8 36 -40 ~ 125 Active
AS358MTR-E1 Diodes Incorporated General Purpose 20 nA 2 mV 700 3 36 -40 ~ 85 Active
LM158DT STMicroelectronics General Purpose 0.6 1.1 20 nA 5 mV 700 3 30 -55 ~ 125 Active
LM258AWDT STMicroelectronics General Purpose 0.6 1.1 20 nA 1 mV 700 3 30 -40 ~ 105 Active

Engineering Selection Recommendations

Direct Equivalent Selection:

The TL062ACDR represents the primary direct equivalent to the TL062ACDRE4. Both devices are manufactured by Texas Instruments, maintain identical electrical specifications, and are housed in the 8-SOIC package. The TL062ACDR is currently in active production status with higher inventory availability (1741 units), making it the preferred choice for direct replacement in existing designs. Both parts are ROHS3 compliant with MSL 1 rating.

Enhanced Performance Alternatives:

The TL062ID and TL062IDT (STMicroelectronics) provide extended operating temperature range (-40°C to 105°C versus 0°C to 70°C) and expanded supply voltage range (6V to 36V versus 10V to 30V) while maintaining identical J-FET amplifier specifications. These parts are suitable for applications requiring broader environmental operating conditions. Both are ROHS3 compliant with MSL 1 rating and available in active production status.

The ADA4062-2ARZ, ADA4062-2ARZ-R7, and ADA4062-2BRZ (Analog Devices Inc.) offer superior performance characteristics including lower input bias current (2 pA), higher gain bandwidth product (1.4 MHz), and extended operating temperature range (-40°C to 125°C). The ADA4062-2BRZ variant provides the lowest input offset voltage (500 µV). These devices are ROHS3 compliant with MSL 1 rating and suitable for precision applications requiring enhanced specifications.

Functional Alternatives:

The AS358MTR-E1 (Diodes Incorporated) and LM258AWDT (STMicroelectronics) are general-purpose amplifiers offering pin-compatible 8-SOIC packages. These alternatives are appropriate only when J-FET input characteristics are not critical to application performance. The LM258AWDT includes automotive qualification (AEC-Q100) and extended temperature range (-40°C to 105°C). Both are ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can the TL062ACDRE4 be directly replaced with the TL062ACDR?

A: Yes. The TL062ACDR is a direct equivalent with identical electrical specifications, J-FET amplifier type, dual-circuit configuration, and 8-SOIC package. The primary difference is packaging format (Tape & Reel versus individual packaging) and active production status. Pin configuration and electrical performance are identical.

Q: What is the difference between TL062ACDT and TL062ID?

A: Both are STMicroelectronics J-FET amplifiers in 8-SOIC packages with identical core specifications. The TL062ACDT is supplied in Cut Tape & Digi-Reel format, while TL062ID is supplied in Tube packaging. The TL062ID offers extended operating temperature range (-40°C to 105°C). Both support expanded supply voltage range (6V to 36V) compared to the original TL062ACDRE4 (10V to 30V).

Q: Are the Analog Devices ADA4062 series parts suitable replacements?

A: The ADA4062-2ARZ, ADA4062-2ARZ-R7, and ADA4062-2BRZ are pin-compatible J-FET amplifiers in 8-SOIC packages offering enhanced performance. They provide lower input bias current (2 pA versus 30 pA), higher gain bandwidth product (1.4 MHz versus 1 MHz), and extended temperature range (-40°C to 125°C). These are suitable for applications where improved specifications are beneficial or required.

Q: When should general-purpose amplifiers like the LM258AWDT be considered?

A: General-purpose amplifiers should be considered only when the specific J-FET input characteristics of the TL062ACDRE4 are not essential to application performance. The LM258AWDT offers lower supply current (700 µA versus 200 µA) and broader supply voltage range (3V to 30V), but lacks the high input impedance and low input bias current characteristics of J-FET designs. The LM258AWDT includes automotive qualification (AEC-Q100).

Q: What packaging options are available for TL062 equivalents?

A: TL062 equivalents are available in multiple packaging formats: Tape & Reel (TL062ACDR), Cut Tape & Digi-Reel (TL062ACDT, TL062IDT), and Tube (TL062ID). All maintain the same 8-SOIC (0.154", 3.90mm Width) package geometry and pin configuration. Selection depends on production volume requirements and assembly process compatibility.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited), matching the compliance profile of the original TL062ACDRE4. All parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the primary limitation of the TL062ACDT regarding input bias current?

A: The TL062ACDT specifies input bias current as 30 nA (nanoseconds) rather than 30 pA (picoseconds) as in the original TL062ACDRE4. This represents a 1000-fold increase in input bias current. Applications sensitive to input bias current specifications should verify compatibility or select alternatives such as TL062ID or ADA4062 series, which maintain the 30 pA specification.

Q: Can the TL062ACDRE4 be used in automotive applications?

A: The TL062ACDRE4 itself does not carry automotive qualification. However, automotive-qualified alternatives are available: the LM158DT and LM258AWDT both include AEC-Q100 qualification. If automotive qualification is required, these alternatives should be evaluated for functional compatibility with the original design.

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