TL062ACDE4 Equivalent & Substitute Parts

Part Overview

The TL062ACDE4 is a J-FET input operational amplifier featuring dual circuits in an 8-SOIC surface mount package. This device is designed for low-power applications requiring high input impedance and minimal input bias current. The TL062ACDE4 is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain functional compatibility while meeting current procurement requirements.

Substiute Parts

TL062ACDE4
Texas InstrumentsIn Stock: 823TL062ACDE4 Datasheet
TL062ACDE4
Current Part
TL062ACD
Texas InstrumentsIn Stock: 2303TL062ACD Datasheet
TL062ACD
MFR Recommended
TL062ACDT
STMicroelectronicsIn Stock: 3147TL062ACDT Datasheet
TL062ACDT
Direct
TL062ID
STMicroelectronicsIn Stock: 4533TL062ID Datasheet
TL062ID
Upgrade
TL062IDT
STMicroelectronicsIn Stock: 7146TL062IDT Datasheet
TL062IDT
Upgrade
ADA4062-2ARZ
Analog Devices Inc.In Stock: 3250ADA4062-2ARZ Datasheet
ADA4062-2ARZ
MFR Recommended
ADA4062-2ARZ-R7
Analog Devices Inc.In Stock: 17926ADA4062-2ARZ-R7 Datasheet
ADA4062-2ARZ-R7
MFR Recommended
ADA4062-2BRZ
Analog Devices Inc.In Stock: 930ADA4062-2BRZ Datasheet
ADA4062-2BRZ
MFR Recommended
AS358MTR-E1
Diodes IncorporatedIn Stock: 264218AS358MTR-E1 Datasheet
AS358MTR-E1
MFR Recommended
LM158DT
STMicroelectronicsIn Stock: 52673LM158DT Datasheet
LM158DT
MFR Recommended
LM258AWDT
STMicroelectronicsIn Stock: 48444LM258AWDT Datasheet
LM258AWDT
MFR Recommended
LM258D
STMicroelectronicsIn Stock: 3255LM258D Datasheet
LM258D
MFR Recommended
LM258DR2G
onsemiIn Stock: 505253LM258DR2G Datasheet
LM258DR2G
MFR Recommended
LM258DT
STMicroelectronicsIn Stock: 125329LM258DT Datasheet
LM258DT
MFR Recommended
LM258WDT
STMicroelectronicsIn Stock: 51741LM258WDT Datasheet
LM258WDT
MFR Recommended
LM258WYDT
STMicroelectronicsIn Stock: 10422LM258WYDT Datasheet
LM258WYDT
MFR Recommended
LM258YDT
STMicroelectronicsIn Stock: 42694LM258YDT Datasheet
LM258YDT
MFR Recommended
LM2904D
STMicroelectronicsIn Stock: 105454LM2904D Datasheet
LM2904D
MFR Recommended
LM2904DT
Rohm SemiconductorIn Stock: 125452LM2904DT Datasheet
LM2904DT
MFR Recommended
LM2904VDR2G
onsemiIn Stock: 48760LM2904VDR2G Datasheet
LM2904VDR2G
MFR Recommended
LM2904WDT
Rohm SemiconductorIn Stock: 3140LM2904WDT Datasheet
LM2904WDT
MFR Recommended
LM2904WHDT
STMicroelectronicsIn Stock: 2810LM2904WHDT Datasheet
LM2904WHDT
MFR Recommended
LM2904WHYST
STMicroelectronicsIn Stock: 45625LM2904WHYST Datasheet
LM2904WHYST
MFR Recommended
LM2904WYDT
STMicroelectronicsIn Stock: 52757LM2904WYDT Datasheet
LM2904WYDT
MFR Recommended
LM2904YDT
STMicroelectronicsIn Stock: 104422LM2904YDT Datasheet
LM2904YDT
MFR Recommended
LM358AD
STMicroelectronicsIn Stock: 3793LM358AD Datasheet
LM358AD
MFR Recommended
LM358ADR2G
onsemiIn Stock: 45487LM358ADR2G Datasheet
LM358ADR2G
MFR Recommended
LM358ADT
STMicroelectronicsIn Stock: 122315LM358ADT Datasheet
LM358ADT
MFR Recommended
LM358D
STMicroelectronicsIn Stock: 10422LM358D Datasheet
LM358D
MFR Recommended
LM358DT
Rohm SemiconductorIn Stock: 505434LM358DT Datasheet
LM358DT
MFR Recommended
LM358S-13
Diodes IncorporatedIn Stock: 20509LM358S-13 Datasheet
LM358S-13
MFR Recommended
LM358YDT
STMicroelectronicsIn Stock: 40258LM358YDT Datasheet
LM358YDT
MFR Recommended
LM833DT
STMicroelectronicsIn Stock: 166636LM833DT Datasheet
LM833DT
MFR Recommended
MC1458DT
STMicroelectronicsIn Stock: 1662MC1458DT Datasheet
MC1458DT
MFR Recommended
MC33172DR2G
onsemiIn Stock: 25376MC33172DR2G Datasheet
MC33172DR2G
MFR Recommended
MC33172VDR2G
onsemiIn Stock: 2433MC33172VDR2G Datasheet
MC33172VDR2G
MFR Recommended
NCV2904DR2G
onsemiIn Stock: 655406NCV2904DR2G Datasheet
NCV2904DR2G
MFR Recommended
TL062BCDT
STMicroelectronicsIn Stock: 12771TL062BCDT Datasheet
TL062BCDT
MFR Recommended
TL062CDT
STMicroelectronicsIn Stock: 147221TL062CDT Datasheet
TL062CDT
MFR Recommended
TL072CDT
STMicroelectronicsIn Stock: 203221TL072CDT Datasheet
TL072CDT
MFR Recommended

Key Parameters

Parameter Value
Amplifier Type J-FET
Number of Circuits 2
Slew Rate 3.5 V/µs
Gain Bandwidth Product 1 MHz
Current - Input Bias 30 pA
Voltage - Input Offset 3 mV
Current - Supply 200 µA (x2 Channels)
Current - Output / Channel 20 mA
Voltage - Supply Span (Min) 10 V
Voltage - Supply Span (Max) 30 V
Operating Temperature 0°C ~ 70°C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TL062ACDE4 is determined by the following critical parameters:

Primary Substitution Criteria:

  • Amplifier Type: J-FET input configuration
  • Number of Circuits: Dual (2) circuits
  • Package / Case: 8-SOIC form factor
  • Mounting Type: Surface Mount
  • Voltage - Supply Span: Minimum 10 V to 30 V operating range
  • Current - Input Bias: 30 pA specification
  • Slew Rate: 3.5 V/µs
  • Gain Bandwidth Product: 1 MHz

Substitution Categories:

Direct Equivalents (TL062 Base Series): Parts sharing identical electrical specifications and the same base product number (TL062) with J-FET input architecture, dual circuits, and 8-SOIC packaging. These include TL062ACD, TL062ACDT, TL062ID, and TL062IDT from Texas Instruments and STMicroelectronics.

Enhanced Performance Alternatives (ADA4062 Series): J-FET input dual-circuit amplifiers in 8-SOIC packaging with superior electrical characteristics including lower input bias current (2 pA), higher gain bandwidth product (1.4 MHz), and extended operating temperature range (-40°C ~ 125°C). These parts maintain J-FET architecture and dual-circuit configuration while offering improved specifications.

Functional Alternatives (General Purpose Amplifiers): General purpose dual-circuit amplifiers in 8-SOIC packaging (AS358MTR-E1, LM158DT, LM258AWDT) that provide operational amplification in the same package form factor. These parts differ in amplifier type (general purpose vs. J-FET) and electrical characteristics but maintain dual-circuit, 8-SOIC configuration and surface mount compatibility.

Parameter Comparison

Part Number Manufacturer Amplifier Type Number of Circuits Slew Rate (V/µs) Gain Bandwidth Product (MHz) Current - Input Bias (pA) Voltage - Input Offset (mV) Current - Supply (µA) Voltage - Supply Min (V) Voltage - Supply Max (V) Operating Temperature (°C) Product Status
TL062ACDE4 Texas Instruments J-FET 2 3.5 1 30 3 200 10 30 0 ~ 70 Discontinued
TL062ACD Texas Instruments J-FET 2 3.5 1 30 3 200 Active
TL062ACDT STMicroelectronics J-FET 2 3.5 1 30 3 200 6 36 0 ~ 70 Active
TL062ID STMicroelectronics J-FET 2 3.5 1 30 3 200 6 36 -40 ~ 105 Active
TL062IDT STMicroelectronics J-FET 2 3.5 1 30 3 200 6 36 -40 ~ 105 Active
ADA4062-2ARZ Analog Devices Inc. J-FET 2 3.3 1.4 2 0.75 165 8 36 -40 ~ 125 Active
ADA4062-2ARZ-R7 Analog Devices Inc. J-FET 2 3.3 1.4 2 0.75 165 8 36 -40 ~ 125 Active
ADA4062-2BRZ Analog Devices Inc. J-FET 2 3.3 1.4 2 0.5 165 8 36 -40 ~ 125 Active
AS358MTR-E1 Diodes Incorporated General Purpose 2 20 2 700 3 36 -40 ~ 85 Active
LM158DT STMicroelectronics General Purpose 2 0.6 1.1 20 5 700 3 30 -55 ~ 125 Active
LM258AWDT STMicroelectronics General Purpose 2 0.6 1.1 20 1 700 3 30 -40 ~ 105 Active

Engineering Selection Recommendations

Direct Substitution (TL062 Series - Recommended for Pin-Compatible Replacement):

The TL062ACDT, TL062ID, and TL062IDT from STMicroelectronics are direct functional equivalents of the TL062ACDE4. These parts maintain identical J-FET input architecture, dual-circuit configuration, electrical specifications (3.5 V/µs slew rate, 1 MHz gain bandwidth product, 30 pA input bias current), and 8-SOIC packaging. All three parts are ROHS3 compliant and currently active in production. The TL062ACDT and TL062IDT offer expanded supply voltage range (6 V to 36 V) compared to the original specification (10 V to 30 V). The TL062ID and TL062IDT provide extended operating temperature range (-40°C ~ 105°C) beyond the original 0°C ~ 70°C specification, enabling use in wider environmental conditions.

Enhanced Performance Alternative (ADA4062 Series):

The ADA4062-2ARZ, ADA4062-2ARZ-R7, and ADA4062-2BRZ from Analog Devices Inc. provide J-FET input dual-circuit amplifiers in 8-SOIC packaging with superior electrical performance. These parts feature significantly lower input bias current (2 pA vs. 30 pA), higher gain bandwidth product (1.4 MHz vs. 1 MHz), and lower input offset voltage (0.75 mV or 0.5 mV vs. 3 mV). Extended operating temperature range (-40°C ~ 125°C) and expanded supply voltage range (8 V to 36 V) provide additional design flexibility. All three variants are ROHS3 compliant and active in production. Selection between ADA4062-2ARZ and ADA4062-2BRZ depends on input offset voltage requirements (750 µV vs. 500 µV).

Functional Alternative (General Purpose Amplifiers):

The AS358MTR-E1, LM158DT, and LM258AWDT are general purpose dual-circuit amplifiers in 8-SOIC packaging suitable for applications where J-FET input characteristics are not critical. These parts maintain dual-circuit configuration and 8-SOIC form factor but differ in amplifier type and electrical specifications. The LM258AWDT and LM158DT include automotive qualification (AEC-Q100) and are ROHS3 compliant. These alternatives are appropriate only when J-FET input impedance and low input bias current are not design requirements.

Frequently Asked Questions (FAQ)

Q: Can the TL062ACDT directly replace the TL062ACDE4 in existing designs?

A: Yes. The TL062ACDT is a direct functional equivalent with identical J-FET input architecture, dual-circuit configuration, electrical specifications (3.5 V/µs slew rate, 1 MHz gain bandwidth product, 30 pA input bias current), and 8-SOIC packaging. Pin compatibility is maintained. The expanded supply voltage range (6 V to 36 V) is backward compatible with designs operating within the original 10 V to 30 V specification.

Q: What is the primary difference between TL062ACDT and TL062ID/TL062IDT?

A: The TL062ID and TL062IDT provide extended operating temperature range (-40°C ~ 105°C) compared to TL062ACDT (0°C ~ 70°C). All three parts share identical electrical specifications and 8-SOIC packaging. Selection depends on environmental operating temperature requirements.

Q: How do the ADA4062 series parts differ from the TL062 series?

A: The ADA4062 series offers enhanced electrical performance with lower input bias current (2 pA vs. 30 pA), higher gain bandwidth product (1.4 MHz vs. 1 MHz), and lower input offset voltage (0.75 mV or 0.5 mV vs. 3 mV). Both maintain J-FET input architecture and dual-circuit configuration in 8-SOIC packaging. The ADA4062 series provides extended operating temperature range (-40°C ~ 125°C) and expanded supply voltage range (8 V to 36 V).

Q: Are general purpose amplifiers (AS358MTR-E1, LM158DT, LM258AWDT) suitable replacements for the TL062ACDE4?

A: General purpose amplifiers are suitable only when J-FET input impedance and extremely low input bias current (30 pA) are not design requirements. These parts feature significantly higher input bias current (20 nA), lower slew rate (0.6 V/µs), and different amplifier architecture. They maintain dual-circuit configuration and 8-SOIC packaging but are not direct functional equivalents.

Q: What packaging options are available for TL062 series substitutes?

A: TL062ACDT and TL062IDT are supplied in Cut Tape (CT) & Digi-Reel® packaging. TL062ID is supplied in Tube packaging. All maintain identical 8-SOIC (0.154", 3.90mm Width) case dimensions and surface mount compatibility.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (TL062ACDT, TL062ID, TL062IDT, ADA4062-2ARZ, ADA4062-2ARZ-R7, ADA4062-2BRZ, AS358MTR-E1, LM158DT, LM258AWDT) are ROHS3 compliant. All are REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the moisture sensitivity level (MSL) for substitute parts?

A: The TL062ACDT, TL062ID, TL062IDT, and all ADA4062 variants have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. The AS358MTR-E1 has MSL 3 (168 Hours), requiring controlled storage conditions.

Q: Which substitute provides the best performance upgrade?

A: The ADA4062-2BRZ offers the highest performance upgrade with lowest input offset voltage (0.5 mV), lowest input bias current (2 pA), and highest gain bandwidth product (1.4 MHz) while maintaining J-FET input architecture and 8-SOIC packaging. Extended operating temperature range (-40°C ~ 125°C) and expanded supply voltage range (8 V to 36 V) provide additional design flexibility.

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