TK9A65W,S5X N-Channel 650V 9.3A MOSFET Equivalent & Substitute Parts

Part Overview

The TK9A65W,S5X is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 650V drain-to-source voltage with 9.3A continuous drain current at 25°C. The device is housed in a TO-220SIS through-hole package and is classified as Active product status with full RoHS3 compliance. This component is suitable for high-voltage switching applications requiring moderate current handling in a standard through-hole form factor. Equivalent and substitute parts are identified based on matching electrical specifications including voltage rating, current capacity, on-resistance characteristics, and compatible packaging standards.

Substiute Parts

TK9A65W,S5X

Toshiba Semiconductor and StorageIn Stock: 2192TK9A65W,S5X Datasheet

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IPA60R600P7XKSA1

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IPAW70R600CEXKSA1

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STF10NM60N

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STF11N60DM2

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STFU13N65M2

STMicroelectronicsIn Stock: 2207STFU13N65M2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TK9A65W,S5X are selected based on the following critical electrical and mechanical parameters:

Primary Selection Criteria:

• Drain-to-Source Voltage (Vdss): 600V to 700V range
• Continuous Drain Current (Id): 6A to 10.5A minimum
• On-Resistance (Rds On): 420mOhm to 600mOhm at specified gate voltage
• Package Type: TO-220 through-hole variants (TO-220SIS, TO-220FP, PG-TO220-FP, PG-TO220-3-FP)
• Technology: N-Channel MOSFET (Metal Oxide)
• Compliance: RoHS3 compliant

Substitution Logic: Parts are grouped into two categories based on voltage and current ratings. Group 1 includes devices rated at 600V with 6A to 10A current capacity, suitable for applications where the 650V rating is not mandatory. Group 2 includes devices rated at 650V to 700V with current ratings matching or exceeding the main part specification, providing direct voltage-class equivalence. All substitute parts maintain through-hole mounting and TO-220 package family compatibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitutes (Active Status, Voltage-Class Match):

The STFU13N65M2 is the preferred substitute for direct replacement. It matches the 650V voltage rating of the main part, provides 10A continuous drain current (exceeding the 9.3A specification), and maintains identical TO-220 through-hole packaging. Both devices are Active status with RoHS3 compliance. The STFU13N65M2 exhibits lower on-resistance (430mOhm vs. 500mOhm), resulting in reduced power dissipation and improved thermal performance.

Secondary Substitutes (Active Status, 600V Voltage Class):

The STF10NM60N and STF11N60DM2 are suitable alternatives for applications where 600V rating is acceptable. Both devices provide 10A continuous drain current and maintain TO-220FP packaging. The STF11N60DM2 offers superior on-resistance performance (420mOhm) compared to the main part, with lower gate charge (16.5nC vs. 20nC), enabling faster switching characteristics. The STF10NM60N provides balanced performance with 550mOhm on-resistance and 19nC gate charge.

Alternative Substitute (600V Voltage Class, Lower Current):

The IPA60R600P7XKSA1 is rated for 6A continuous drain current, which is below the main part specification. This device is suitable only for applications with reduced current requirements. It features the lowest gate charge (9nC) among all substitutes, enabling high-frequency switching operation.

Not Recommended:

The IPAW70R600CEXKSA1 is classified as Obsolete product status and should not be selected for new designs or long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can the STFU13N65M2 be used as a direct replacement for the TK9A65W,S5X?

A: Yes. The STFU13N65M2 matches the 650V voltage rating, exceeds the 9.3A current requirement with 10A capacity, and uses compatible TO-220 through-hole packaging. Both devices are Active status with RoHS3 compliance. Pin configuration and electrical characteristics are compatible for direct substitution.

Q: What is the difference between the 600V and 650V rated substitutes?

A: The voltage rating indicates the maximum drain-to-source voltage the device can withstand. The 650V-rated STFU13N65M2 provides equivalent voltage-class performance to the main part. The 600V-rated alternatives (STF10NM60N, STF11N60DM2, IPA60R600P7XKSA1) are suitable only for applications where the maximum operating voltage does not exceed 600V. Selection depends on the circuit's maximum voltage requirement.

Q: Why does the IPAW70R600CEXKSA1 appear in the substitute list if it is Obsolete?

A: The IPAW70R600CEXKSA1 is listed based on the provided substitute data but carries Obsolete product status. This designation indicates the manufacturer no longer actively produces or supports this part. New designs should not incorporate this device. Existing inventory may be available from distributors, but long-term supply cannot be assured.

Q: How do on-resistance differences affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and thermal performance. Lower on-resistance reduces heat generation during switching. The STFU13N65M2 (430mOhm) and STF11N60DM2 (420mOhm) dissipate less power than the main part (500mOhm). In high-frequency or high-current applications, this difference improves efficiency and reduces cooling requirements. In low-frequency or low-current applications, the difference is negligible.

Q: Are all substitute parts available in the same package?

A: All substitute parts use TO-220 through-hole package variants (TO-220SIS, TO-220FP, PG-TO220-FP, PG-TO220-3-FP). These packages are mechanically and electrically compatible for PCB mounting. Pin assignments follow standard TO-220 conventions (Gate, Drain, Source). Verify specific package dimensions with the manufacturer datasheet if tight PCB layout constraints exist.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (IPA60R600P7XKSA1 at 9nC) enables faster switching and reduces gate drive power consumption. Higher gate charge (IPAW70R600CEXKSA1 at 22nC) requires more gate drive current but may provide improved noise immunity. The main part (20nC) and most substitutes (16.5nC to 19nC) fall within a narrow range suitable for standard gate drive circuits.

Q: Can substitutes be mixed in the same circuit or application?

A: Substitutes should not be mixed within a single circuit unless the gate drive circuit and thermal management are designed to accommodate the performance variations. Different on-resistance values result in unequal current sharing in parallel configurations. If multiple devices are required, select parts from a single manufacturer and part number to ensure consistent electrical characteristics.

Q: What compliance certifications are relevant for substitute selection?

A: All listed substitutes maintain RoHS3 compliance, meeting environmental and hazardous substance restrictions. The main part and all Active-status substitutes are suitable for applications requiring regulatory compliance. The Obsolete-status IPAW70R600CEXKSA1 should not be selected for compliance-critical applications due to discontinued manufacturer support.