TIP50-S Equivalent & Substitute Parts Engineering Reference

Part Overview

The TIP50-S, manufactured by Bourns Inc., is an NPN bipolar junction transistor (BJT) rated for 400 V collector-emitter breakdown voltage, 1 A collector current, and 2 W maximum power. Its through-hole TO-220 package supports direct mounting onto standard heatsinks and PCBs. The TIP50-S is currently listed as Obsolete, making it necessary to identify functional substitute part numbers to maintain design continuity and replacement inventory for transistors in the Bipolar (BJT) category.

Substiute Parts

TIP50-S

Bourns Inc.In Stock: 854TIP50-S Datasheet

Current PartRFQ

TIP50

NTE Electronics, IncIn Stock: 4561TIP50 Datasheet

DirectRFQ

TIP50G

onsemiIn Stock: 15297TIP50G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of TIP50-S is governed by matching the following key allowed parameters: transistor type (NPN), collector-emitter breakdown voltage (400 V), collector current (1 A), DC current gain (min 30 @ specified conditions), collector cutoff current (1mA max), power rating (≥ 2 W), operating temperature range (-65°C to 150°C), mounting type (Through Hole), and package/case (TO-220-3). Each substitute listed maintains equivalence or compatibility across these parameters, ensuring drop-in replacement without deviation from the specified electrical and mechanical criteria.

Parameter Comparison

Engineering Selection Recommendations

Based on the obsolete status of TIP50-S, substitute selection should consider active production status and compliance certifications. TIP50G (onsemi) is ROHS3 compliant and active, aligning with environmental and supply chain requirements. TIP50 (NTE Electronics, Inc.) is active, but specified as RoHS non-compliant. All substitutes provide equivalent key performance values in the allowed parameters and maintain the same TO-220-3 through-hole package required for direct mechanical compatibility.

Frequently Asked Questions (FAQ)

Q1: What defines substitute compatibility for TIP50-S?
A1: Substitute compatibility is strictly based on matching transistor type (NPN), collector-emitter breakdown voltage (400 V), collector current (1 A), DC current gain (30 minimum at specified conditions), collector cutoff current (1 mA maximum), power rating (minimum 2 W), operating temperature (-65°C ~ 150°C), through-hole mounting, and TO-220-3 package.

Q2: Are the substitute transistors mechanically compatible?
A2: All listed substitutes use the TO-220-3 package with through-hole mounting, ensuring direct mechanical interchangeability in existing designs.

Q3: Does RoHS compliance impact substitute selection?
A3: For designs requiring RoHS compliance, TIP50G (onsemi) is ROHS3 compliant; TIP50 (NTE Electronics, Inc.) is RoHS non-compliant. Product selection must reflect required environmental and regulatory standards.

Q4: Can substitutes be used interchangeably with TIP50-S in all applications?
A4: Substitutes provide equivalence in all input-provided electrical and mechanical parameters. Product status, compliance, and certifications should be verified against application requirements.

Q5: Is the power rating identical across all substitutes?
A5: TIP50-S and TIP50G specify 2 W maximum power, while TIP50 (NTE Electronics, Inc.) specifies 40 W maximum. All meet or exceed the original specification. Selection can be based on the required minimum power rating and part availability.