TIP50G Equivalent & Substitute Parts

Part Overview

The TIP50G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This through-hole component operates at 400 V collector-emitter breakdown voltage with a maximum collector current of 1 A and 2 W power dissipation capability. The device is currently in active production status with substantial inventory availability. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications requiring NPN transistors with matching electrical and mechanical specifications.

Substiute Parts

TIP50G
onsemiIn Stock: 15297TIP50G Datasheet
TIP50G
Current Part
TIP50
NTE Electronics, IncIn Stock: 4561TIP50 Datasheet
TIP50
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 1 A
Power - Max 2 W
Frequency - Transition 10 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V
Operating Temperature Range -65 to 150 °C
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the TIP50G with equivalent parts is determined by strict parametric matching across electrical and mechanical characteristics. The following parameters establish substitution validity:

Electrical Parameters (Critical):

  • Transistor Type: NPN configuration
  • Voltage - Collector Emitter Breakdown (Max): 400 V minimum
  • Current - Collector (Ic) (Max): 1 A minimum
  • Frequency - Transition: 10 MHz minimum
  • DC Current Gain (hFE) (Min): 30 @ 300mA, 10V minimum
  • Operating Temperature Range: -65°C to 150°C minimum

Mechanical Parameters (Critical):

  • Package / Case: TO-220-3
  • Mounting Type: Through Hole

The TIP50 from NTE Electronics, Inc. meets all critical electrical and mechanical parameters required for direct substitution with the TIP50G. Both devices share identical transistor type, voltage rating, collector current rating, transition frequency, DC current gain specification, operating temperature range, and package configuration.

Parameter Comparison

Parameter TIP50G (onsemi) TIP50 (NTE Electronics) Match Status
Transistor Type NPN NPN Identical
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V Identical
Current - Collector (Ic) (Max) 1 A 1 A Identical
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 2A Compatible
Current - Collector Cutoff (Max) 1 mA 1 mA Identical
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V Identical
Frequency - Transition 10 MHz 10 MHz Identical
Operating Temperature Range -65°C to 150°C -65°C to 150°C Identical
Package / Case TO-220-3 TO-220-3 Identical
Mounting Type Through Hole Through Hole Identical
Power - Max 2 W 40 W Substitute Exceeds

Engineering Selection Recommendations

TIP50G (onsemi) is the primary specification component with active product status and RoHS3 compliance. This device is suitable for applications requiring regulatory compliance with RoHS directives and REACH unaffected status.

TIP50 (NTE Electronics) serves as a parametric equivalent with identical electrical and mechanical specifications across all critical parameters. The NTE Electronics variant provides higher maximum power dissipation (40 W versus 2 W), which represents a performance enhancement for thermal margin in switching applications. However, this substitute is RoHS non-compliant and carries Moisture Sensitivity Level 1 classification, requiring consideration in regulated environments or applications with specific compliance requirements.

Selection between these devices depends on regulatory compliance mandates and supply chain availability. Both devices are electrically and mechanically interchangeable for applications operating within the specified 2 W power envelope of the TIP50G.

Frequently Asked Questions (FAQ)

Q: Can the TIP50 (NTE Electronics) directly replace the TIP50G (onsemi) in existing designs?

A: Yes. Both devices share identical electrical specifications for transistor type, voltage rating, collector current, transition frequency, DC current gain, and operating temperature range. The TO-220-3 package configuration and through-hole mounting are identical, enabling direct pin-compatible substitution.

Q: What is the significance of the power rating difference between TIP50G (2 W) and TIP50 (40 W)?

A: The TIP50 from NTE Electronics provides higher thermal capacity and power dissipation capability. For applications designed to operate within the 2 W specification of the TIP50G, both devices perform identically. The higher power rating of the NTE variant provides additional thermal margin but does not alter electrical performance at equivalent operating points.

Q: Are there compliance differences between these devices?

A: Yes. The TIP50G is RoHS3 compliant and REACH unaffected. The TIP50 from NTE Electronics is RoHS non-compliant and carries Moisture Sensitivity Level 1. Applications subject to RoHS directives or requiring REACH compliance must use the TIP50G.

Q: What packaging differences exist between these devices?

A: The TIP50G is supplied in tube packaging, while the TIP50 is supplied in bag packaging. Both use identical TO-220-3 case configuration. Packaging format affects handling and storage procedures but does not impact electrical or mechanical compatibility.

Q: Are the DC current gain specifications identical?

A: Yes. Both devices specify DC current gain (hFE) minimum of 30 at 300 mA collector current and 10 V collector-emitter voltage. This parameter is critical for circuit design and is matched between the two devices.

Q: Can the TIP50 be used in applications requiring RoHS compliance?

A: No. The TIP50 from NTE Electronics is RoHS non-compliant. Applications requiring RoHS certification must use the TIP50G from onsemi.

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