TIP50 Equivalent & Substitute Parts

Part Overview

The TIP50 is a Bipolar (BJT) NPN transistor rated for 400 V collector-emitter breakdown voltage and 1 A maximum collector current. The original onsemi TIP50 is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. Substitute parts maintain the core electrical specifications while offering improved product status and availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	1	A
Power - Max	2	W
Frequency - Transition	10	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	—
Current - Collector Cutoff (Max)	1	mA
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the TIP50 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Substitution Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1 mA
Frequency - Transition: 10 MHz
Mounting Type: Through Hole
Package / Case: TO-220-3

Substitute parts are grouped into two categories based on electrical performance and product status:

Category 1: Direct Electrical Equivalent (Active Status) TIP50G (onsemi) maintains identical electrical specifications and active product status with expanded operating temperature range.

Category 2: Enhanced Performance Equivalent (Active Status) TIP50 (NTE Electronics, Inc) provides increased power dissipation capability (40 W versus 2 W) while maintaining all core electrical parameters and active product status.

Parameter Comparison

Parameter	TIP50 (onsemi) - Original	TIP50G (onsemi)	TIP50 (NTE Electronics, Inc)
Manufacturer	onsemi	onsemi	NTE Electronics, Inc
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Power - Max	2 W	2 W	40 W
Frequency - Transition	10 MHz	10 MHz	10 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V	30 @ 300mA, 10V	30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A	1V @ 200mA, 1A	1V @ 200mA, 2A
Current - Collector Cutoff (Max)	1 mA	1 mA	1 mA
Operating Temperature (TJ)	150°C	-65°C ~ 150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	Not specified	ROHS3 Compliant	RoHS non-compliant
REACH Status	REACH Unaffected	REACH Unaffected	Not specified

Engineering Selection Recommendations

For Direct Replacement (Preferred): The TIP50G (onsemi) is the primary substitute for the obsolete TIP50 (onsemi). This part maintains identical electrical specifications, active product status, and ROHS3 compliance. The expanded operating temperature range (-65°C ~ 150°C) provides additional design margin compared to the original specification. Availability is confirmed at 15,216 pieces in stock.

For Enhanced Thermal Performance: The TIP50 (NTE Electronics, Inc) provides increased power dissipation capability (40 W maximum) while maintaining all critical electrical parameters. This part is suitable for applications requiring higher thermal headroom. The part is active and available at 4,510 pieces in stock. RoHS compliance status differs from the onsemi equivalent.

Compliance Considerations: Applications requiring ROHS3 compliance should specify TIP50G (onsemi). Applications with RoHS non-compliance requirements or no RoHS mandate may utilize TIP50 (NTE Electronics, Inc). Both substitute parts maintain REACH Unaffected status where specified.

Frequently Asked Questions (FAQ)

Q: Can TIP50G directly replace the obsolete TIP50 (onsemi)? A: Yes. TIP50G maintains identical electrical specifications including 400 V breakdown voltage, 1 A maximum collector current, 10 MHz transition frequency, and DC current gain of 30 @ 300mA, 10V. The TO-220-3 package is mechanically compatible. TIP50G is active and ROHS3 compliant.

Q: What is the difference between TIP50G and TIP50 (NTE Electronics, Inc)? A: Both parts maintain identical core electrical specifications. The primary difference is maximum power dissipation: TIP50G is rated 2 W, while NTE TIP50 is rated 40 W. The NTE part provides enhanced thermal capability for applications with higher power requirements. RoHS compliance status also differs.

Q: Are all substitute parts in the TO-220-3 package? A: Yes. All listed parts use the TO-220-3 package for mechanical and thermal compatibility. Packaging format (tube versus bag) differs by supplier but does not affect electrical performance or pin configuration.

Q: What operating temperature range should be specified for new designs? A: Both active substitutes support -65°C ~ 150°C operating temperature range, which exceeds the original TIP50 specification of 150°C maximum. Designs may utilize the expanded lower temperature limit.

Q: Are there any electrical parameter differences between substitutes? A: All substitutes maintain the specified electrical parameters with one exception: NTE TIP50 specifies Vce Saturation at 1V @ 200mA, 2A versus the original specification of 1V @ 200mA, 1A. This represents enhanced saturation performance at higher collector current.

Q: Which substitute should be selected for new production designs? A: TIP50G (onsemi) is recommended for new designs requiring direct electrical equivalence, active product status, and ROHS3 compliance. TIP50 (NTE Electronics, Inc) is suitable when enhanced power dissipation capability is required.

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