TIP49 TR Equivalent & Substitute Parts Reference

Part Overview

The TIP49 TR is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 350 V, and maximum power dissipation of 40 W in a Through Hole TO-220-3 package. The TIP49 TR is classified as obsolete, necessitating identification of active substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Substiute Parts

TIP49 TR
Central Semiconductor CorpIn Stock: 895TIP49 TR Datasheet
TIP49 TR
Current Part
TIP50
NTE Electronics, IncIn Stock: 4561TIP50 Datasheet
TIP50
MFR Recommended
TIP49
NTE Electronics, IncIn Stock: 1700TIP49 Datasheet
TIP49
Parametric Equivalent
TIP49
NTE Electronics, IncIn Stock: 1700TIP49 Datasheet
TIP49
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 1 A
Voltage - Collector Emitter Breakdown (Max) 350 V
Power - Max 40 W
Frequency - Transition 10 MHz
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 300mA, 10V
Operating Temperature Range -65 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute components for the TIP49 TR are identified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Electrical Parameters:

  • Transistor type must be NPN
  • Collector current rating must equal or exceed 1 A
  • Collector-emitter breakdown voltage must equal or exceed 350 V
  • Power dissipation must equal or exceed 40 W
  • Transition frequency must equal or exceed 10 MHz
  • DC current gain (hFE) must meet or exceed 30 @ 300mA, 10V
  • Operating temperature range must encompass -65°C to 150°C

Mechanical Parameters:

  • Mounting type must be Through Hole
  • Package must be TO-220-3 or equivalent footprint

Two substitute parts meet these criteria: TIP50 (NTE Electronics, Inc) and TIP49 (NTE Electronics, Inc). The TIP50 provides enhanced voltage capability at 400 V maximum collector-emitter breakdown, while the NTE TIP49 maintains identical electrical specifications to the original Central Semiconductor part.

Parameter Comparison

Parameter TIP49 TR (Central Semiconductor) TIP50 (NTE Electronics) TIP49 (NTE Electronics)
Transistor Type NPN NPN NPN
Current - Collector (Ic) Max 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 350 V 400 V 350 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 2A 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 1 mA 1 mA 1 mA
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 300mA, 10V
Power - Max 40 W 40 W 40 W
Frequency - Transition 10 MHz 10 MHz 10 MHz
Operating Temperature Range -65 to 150°C -65 to 150°C -65 to 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active

Engineering Selection Recommendations

TIP49 (NTE Electronics, Inc) - Parametric Equivalent

The NTE Electronics TIP49 is the direct parametric equivalent to the obsolete Central Semiconductor TIP49 TR. This component maintains identical electrical specifications across all critical parameters: 350 V collector-emitter breakdown voltage, 1 A maximum collector current, 40 W power dissipation, and 10 MHz transition frequency. The NTE TIP49 is classified as Active product status, ensuring ongoing availability and supply chain continuity. Both devices share the TO-220-3 package and Through Hole mounting configuration, providing direct mechanical compatibility. The NTE TIP49 is RoHS non-compliant, consistent with the original part's compliance profile.

TIP50 (NTE Electronics, Inc) - Enhanced Voltage Substitute

The NTE Electronics TIP50 functions as an enhanced substitute for applications requiring higher voltage margin. This device increases the collector-emitter breakdown voltage to 400 V while maintaining all other electrical parameters at or above the original specification: 1 A collector current, 40 W power dissipation, 10 MHz transition frequency, and identical DC current gain characteristics. The TIP50 is classified as Active product status. The TO-220-3 package and Through Hole mounting provide mechanical compatibility. The TIP50 is RoHS non-compliant. Selection of the TIP50 is appropriate for circuits operating near the 350 V maximum rating of the original part, providing 50 V additional voltage headroom.

Frequently Asked Questions (FAQ)

Q: Can the NTE TIP49 directly replace the Central Semiconductor TIP49 TR?

A: Yes. The NTE TIP49 maintains identical electrical specifications across all parameters: 350 V collector-emitter breakdown voltage, 1 A maximum collector current, 40 W power dissipation, 10 MHz transition frequency, and DC current gain of 30 @ 300mA, 10V. Both devices use the TO-220-3 package with Through Hole mounting. Direct substitution is supported without circuit modification.

Q: When should the TIP50 be selected instead of the TIP49?

A: The TIP50 is selected when circuit design requires voltage margin beyond 350 V. The TIP50 provides 400 V collector-emitter breakdown voltage, representing a 50 V increase over the original TIP49 TR specification. All other electrical parameters remain equivalent. Selection depends on actual circuit operating voltage requirements.

Q: Are the TO-220-3 packages of all three parts mechanically identical?

A: Yes. The Central Semiconductor TIP49 TR, NTE TIP49, and NTE TIP50 all use the TO-220-3 Through Hole package. Pin configuration and mechanical footprint are identical, supporting direct board-level substitution without layout modification.

Q: What is the significance of the RoHS non-compliant status?

A: The RoHS non-compliant status indicates these components do not meet Restriction of Hazardous Substances directives. This status applies to the original TIP49 TR and both substitute parts (NTE TIP49 and TIP50). Component selection should account for applicable regulatory requirements in the target application and market.

Q: How do the Vce saturation specifications differ between parts?

A: The original Central Semiconductor TIP49 TR specifies Vce saturation of 1V @ 200mA, 1A. Both NTE substitutes (TIP49 and TIP50) specify Vce saturation of 1V @ 200mA, 2A. The NTE parts maintain the 1V saturation voltage at the original test condition (200mA) and extend the specification to 2A collector current, indicating equivalent or superior saturation performance.

Q: Is inventory availability a factor in substitute selection?

A: Inventory levels are provided for reference: Central Semiconductor TIP49 TR (803 Pcs), NTE TIP50 (4510 Pcs), and NTE TIP49 (1610 Pcs). However, component selection must be based on electrical and mechanical compatibility. Inventory status should be verified with suppliers at the time of procurement.

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