TIP47 Equivalent & Substitute Parts

Part Overview

The TIP47 is a through-hole NPN bipolar junction transistor manufactured by onsemi, rated for 250 V collector-emitter breakdown voltage and 1 A maximum collector current. The device is designed for general-purpose switching and amplification applications in a TO-220-3 package configuration. The original onsemi TIP47 carries an obsolete product status, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity.

Substiute Parts

TIP47
onsemiIn Stock: 26309TIP47 Datasheet
TIP47
Current Part
TIP47G
onsemiIn Stock: 2090TIP47G Datasheet
TIP47G
Direct
MJE15032G
onsemiIn Stock: 35178MJE15032G Datasheet
MJE15032G
Similar
TIP47
NTE Electronics, IncIn Stock: 26227TIP47 Datasheet
TIP47
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 250 V
Current - Collector (Ic) (Max) 1 A
Power - Max 2 W
Frequency - Transition 10 MHz
Vce Saturation (Max) @ Ib, Ic 1 V @ 200 mA, 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300 mA, 10 V
Operating Temperature 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the TIP47 is determined by strict equivalence across the following electrical and mechanical parameters: transistor type (NPN), collector-emitter breakdown voltage (250 V), maximum collector current (1 A), power dissipation capability, transition frequency, saturation voltage characteristics, DC current gain specifications, and through-hole TO-220-3 package configuration.

Substitute parts are grouped into two categories:

Direct Equivalents: Parts that maintain identical electrical specifications and package form factor. These include the TIP47G (onsemi, active status) and TIP47 (NTE Electronics, Inc, active status). Both devices preserve the 1 A collector current rating, 250 V breakdown voltage, 10 MHz transition frequency, and TO-220-3 package.

Similar Substitutes: Parts that share the same voltage rating and package type but differ in current-handling capacity and power dissipation. The MJE15032G (onsemi, active status) operates at 250 V breakdown voltage in a TO-220-3 package but is rated for 8 A collector current and 50 W power dissipation, representing an uprated alternative for applications requiring higher current capacity within the same voltage class.

Parameter Comparison

Parameter TIP47 (onsemi, Obsolete) TIP47G (onsemi, Active) TIP47 (NTE Electronics, Active) MJE15032G (onsemi, Active)
Transistor Type NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V 250 V 250 V
Current - Collector (Ic) (Max) 1 A 1 A 1 A 8 A
Power - Max 2 W 2 W 40 W 50 W
Frequency - Transition 10 MHz 10 MHz 10 MHz 30 MHz
Vce Saturation (Max) @ Ib, Ic 1 V @ 200 mA, 1 A 1 V @ 200 mA, 1 A 1 V @ 200 mA, 1 A 500 mV @ 100 mA, 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300 mA, 10 V 30 @ 300 mA, 10 V 30 @ 300 mA, 10 V 10 @ 2 A, 5 V
Operating Temperature 150 °C (TJ) −65 °C ~ 150 °C (TJ) −65 °C ~ 150 °C (TJ) −65 °C ~ 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active
RoHS Status Not specified ROHS3 Compliant RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Pin-Compatible, Electrical Equivalent):

The TIP47G (onsemi) is the primary recommended substitute for the obsolete TIP47. This part maintains identical electrical specifications (1 A collector current, 250 V breakdown voltage, 10 MHz transition frequency, 2 W power rating) and package configuration (TO-220-3). The TIP47G carries active product status and ROHS3 compliance, supporting long-term design continuity and regulatory requirements.

For Active Sourcing with Extended Temperature Range:

The TIP47 manufactured by NTE Electronics, Inc provides an alternative active source for the TIP47 specification. This part preserves electrical equivalence across all critical parameters and offers an extended operating temperature range (−65 °C to 150 °C). However, this variant carries RoHS non-compliant status, requiring evaluation against design compliance requirements.

For Uprated Current Applications:

The MJE15032G (onsemi) serves as a substitute for applications requiring higher current capacity within the 250 V voltage class. This device is rated for 8 A collector current and 50 W power dissipation, compared to the TIP47's 1 A and 2 W ratings. The MJE15032G operates at 30 MHz transition frequency and maintains TO-220-3 package compatibility. This substitute is appropriate only when circuit design permits the higher current rating and does not require the specific DC current gain characteristics of the TIP47.

Frequently Asked Questions (FAQ)

Q: Can the TIP47G be used as a direct replacement for the obsolete TIP47?

A: Yes. The TIP47G maintains identical electrical specifications across all critical parameters: 250 V collector-emitter breakdown voltage, 1 A maximum collector current, 10 MHz transition frequency, 2 W power dissipation, and TO-220-3 package configuration. Pin assignment and functional behavior are equivalent.

Q: What is the difference between the onsemi TIP47G and the NTE Electronics TIP47?

A: Both parts meet the TIP47 electrical specification. The primary differences are manufacturer source and compliance status. The TIP47G (onsemi) is ROHS3 compliant with active product status. The TIP47 (NTE Electronics) is RoHS non-compliant but offers extended temperature range documentation (−65 °C to 150 °C versus 150 °C maximum for the original). Selection depends on compliance requirements and temperature operating range needs.

Q: When should the MJE15032G be used instead of the TIP47?

A: The MJE15032G is appropriate for circuit designs requiring collector current above 1 A or power dissipation above 2 W, within the 250 V voltage class. The MJE15032G is rated for 8 A and 50 W. However, the lower DC current gain (10 @ 2 A, 5 V versus 30 @ 300 mA, 10 V for TIP47) and higher transition frequency (30 MHz versus 10 MHz) represent different device characteristics. Use this substitute only when circuit design explicitly accommodates these parameter differences.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All listed substitutes (TIP47G, TIP47 from NTE Electronics, and MJE15032G) are packaged in TO-220-3 through-hole configuration, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Q: What compliance certifications apply to each substitute?

A: The TIP47G and MJE15032G (both onsemi) carry ROHS3 compliance certification. The TIP47 from NTE Electronics is RoHS non-compliant. All parts carry REACH Unaffected status. Selection should align with design compliance requirements and end-use regulatory obligations.

Q: Can the TIP47 be used in high-frequency applications?

A: The TIP47 and its direct equivalents (TIP47G, NTE TIP47) are rated for 10 MHz transition frequency, suitable for general-purpose switching and low-frequency amplification. The MJE15032G operates at 30 MHz, providing higher frequency capability. Application-specific frequency requirements determine appropriate device selection.

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