TIP41 PBFREE Equivalent & Substitute Parts

Part Overview

The TIP41 PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 6 A, collector-emitter breakdown voltage of 40 V, and maximum power dissipation of 65 W in a Through Hole TO-220-3 package. The TIP41 PBFREE is classified as Obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement continuity.

Substiute Parts

TIP41 PBFREE
Central Semiconductor CorpIn Stock: 783TIP41 PBFREE Datasheet
TIP41 PBFREE
Current Part
FJP13007H2TU
onsemiIn Stock: 3528FJP13007H2TU Datasheet
FJP13007H2TU
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 6 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) 1.5 V @ 600mA, 6A
Current - Collector Cutoff (Max) 700 µA
DC Current Gain (hFE) Min 30 @ 300mA, 4V
Power - Max 65 W
Frequency - Transition 3 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TIP41 PBFREE is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

  • Transistor polarity: NPN configuration required
  • Package type: TO-220-3 Through Hole mounting
  • Collector current rating: Must equal or exceed 6 A
  • Collector-emitter breakdown voltage: Must equal or exceed 40 V
  • Power dissipation: Must equal or exceed 65 W
  • RoHS compliance: ROHS3 Compliant status required

The FJP13007H2TU manufactured by onsemi satisfies all mandatory criteria. This device provides enhanced electrical performance with higher voltage and current ratings, making it suitable for applications requiring the TIP41 PBFREE specifications while offering improved design margin.

Parameter Comparison

Parameter TIP41 PBFREE FJP13007H2TU Unit
Manufacturer Central Semiconductor Corp onsemi
Transistor Type NPN NPN
Current - Collector (Ic) Max 6 8 A
Voltage - Collector Emitter Breakdown (Max) 40 400 V
Vce Saturation (Max) 1.5 @ 600mA, 6A 3 @ 2A, 8A V
DC Current Gain (hFE) Min 30 @ 300mA, 4V 26 @ 2A, 5V
Power - Max 65 80 W
Frequency - Transition 3 4 MHz
Operating Temperature (TJ) -65 to 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Last Time Buy

Engineering Selection Recommendations

The FJP13007H2TU is the designated manufacturer-recommended substitute for the TIP41 PBFREE. Both devices maintain identical TO-220-3 Through Hole package geometry and pin configuration, enabling direct mechanical and electrical substitution without circuit board redesign.

The FJP13007H2TU provides superior electrical performance across all critical parameters: collector current capability increases from 6 A to 8 A, collector-emitter breakdown voltage increases from 40 V to 400 V, and maximum power dissipation increases from 65 W to 80 W. Both devices maintain ROHS3 compliance and REACH Unaffected status, satisfying regulatory requirements.

The TIP41 PBFREE is classified as Obsolete, while the FJP13007H2TU carries Last Time Buy status, indicating limited future availability. Procurement planning should prioritize the FJP13007H2TU for new designs and ongoing production requirements.

Frequently Asked Questions (FAQ)

Q: Can the FJP13007H2TU be used as a direct replacement for the TIP41 PBFREE in existing circuits?

A: Yes. Both devices share identical TO-220-3 package geometry and NPN polarity. The FJP13007H2TU meets or exceeds all electrical specifications of the TIP41 PBFREE, including collector current (8 A vs. 6 A), breakdown voltage (400 V vs. 40 V), and power dissipation (80 W vs. 65 W). No circuit board modifications are required.

Q: What are the key differences between these two transistors?

A: The FJP13007H2TU provides higher voltage and current ratings. Collector-emitter breakdown voltage is 10 times higher (400 V vs. 40 V), collector current is 33% higher (8 A vs. 6 A), and power dissipation is 23% higher (80 W vs. 65 W). Transition frequency is slightly higher (4 MHz vs. 3 MHz). DC current gain is comparable (26 vs. 30 at different test conditions).

Q: Are there any compatibility concerns with the TO-220-3 package?

A: No. Both the TIP41 PBFREE and FJP13007H2TU use identical TO-220-3 Through Hole packages with three leads (Base, Collector, Emitter). Pin assignments and mechanical dimensions are identical, ensuring drop-in compatibility.

Q: What is the product status difference, and why does it matter?

A: The TIP41 PBFREE is Obsolete and no longer manufactured. The FJP13007H2TU is Last Time Buy, indicating limited production quantities remain available. For new designs and long-term production, the FJP13007H2TU should be selected to ensure supply continuity.

Q: Do both devices meet current regulatory compliance standards?

A: Yes. Both the TIP41 PBFREE and FJP13007H2TU are ROHS3 Compliant and REACH Unaffected, satisfying current environmental and regulatory requirements for electronic component procurement.

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