TIP41B-S Equivalent & Substitute Parts Reference

Part Overview

TIP41B-S is an NPN bipolar junction transistor manufactured by Bourns Inc., categorized under Transistors, Bipolar (BJT). The device is designed for through-hole mounting, featuring a TO-220 package. Key electrical characteristics include a maximum collector-emitter breakdown voltage of 80 V, a collector current of up to 6 A, and a maximum power dissipation of 2 W. The part has a minimum DC current gain (hFE) of 15 at 3A, 4V, and operates within a temperature range of -65°C to 150°C. TIP41B-S is marked as obsolete, making it necessary to identify direct substitutes with matching electrical, mechanical, and compliance parameters.

Substiute Parts

TIP41B-S
Bourns Inc.In Stock: 1042TIP41B-S Datasheet
TIP41B-S
Current Part
TIP41BG
onsemiIn Stock: 20347TIP41BG Datasheet
TIP41BG
Direct

Key Parameters

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V
Power - Max 2 W
Operating Temperature -65°C ~ 150°C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for TIP41B-S are identified strictly based on matching the following key parameters: Transistor Type (NPN), Maximum Collector Current (6 A), Maximum Collector-Emitter Breakdown Voltage (80 V), Vce Saturation (1.5 V @ 600mA, 6A), Collector Cutoff Current (700µA), Minimum DC Current Gain (15 @ 3A, 4V), Maximum Power Dissipation (2 W), Operating Temperature Range (-65°C ~ 150°C), Package / Case (TO-220-3), Mounting Type (Through Hole), and RoHS Compliance.

Parameter Comparison

Parameter TIP41B-S (Bourns Inc.) TIP41BG (onsemi)
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V 15 @ 3A, 4V
Power - Max 2 W 2 W
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

TIP41B-S is listed as obsolete, whereas TIP41BG from onsemi holds an active product status. TIP41BG maintains full RoHS3 compliance according to provided data. Both parts share equivalent mechanical and electrical key parameters according to the criteria listed above.

Frequently Asked Questions (FAQ)

Q: What are the critical parameters to compare when selecting a substitute for TIP41B-S?
A: The substitution must match Transistor Type (NPN), Maximum Collector Current (6 A), Maximum Collector-Emitter Breakdown Voltage (80 V), Vce Saturation (1.5V @ 600mA, 6A), Collector Cutoff Current (700µA), DC Current Gain (15 @ 3A, 4V), Maximum Power Dissipation (2 W), Operating Temperature Range (-65°C ~ 150°C), Package / Case (TO-220-3), Mounting Type (Through Hole), and RoHS Compliance.

Q: Is the package and pinout of TIP41BG identical to TIP41B-S?
A: Both TIP41B-S and TIP41BG specify a TO-220-3 package and through-hole mounting type.

Q: Does the substitute TIP41BG satisfy the RoHS requirements of the original TIP41B-S?
A: Yes, both TIP41B-S and TIP41BG are listed as ROHS3 compliant in the provided data.

Q: If TIP41B-S is obsolete, is TIP41BG a suitable current-production alternative?
A: TIP41BG is in active production and matches all specified key parameters.

Q: Are there any differences in maximum ratings or performance characteristics between TIP41B-S and TIP41BG?
A: All provided common key parameters are equivalent for both the main part and the substitute part.

Q: What should be checked in the application when replacing TIP41B-S with TIP41BG?
A: Ensure that the application requirements align with the matching key electrical, mechanical, and compliance parameters as listed in this reference.

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