TIP41B PBFREE Equivalent & Substitute Parts

Part Overview

The TIP41B PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 6 A, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 65 W in a Through Hole TO-220-3 package.

The TIP41B PBFREE is classified as Obsolete. Locating equivalent or substitute components is necessary for ongoing production support, design updates, and inventory management when original stock becomes unavailable.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	6	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max)	1.5	V @ 600mA, 6A
Power - Max	65	W
Frequency - Transition	3	MHz
Operating Temperature Range	-65 to 150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TIP41B PBFREE is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor polarity must remain NPN
Collector current rating (Ic Max) must equal or exceed 6 A
Collector-emitter breakdown voltage (Vce Breakdown) must equal or exceed 80 V
Maximum power dissipation must equal or exceed 65 W
Operating temperature range must encompass the application requirements

Mechanical Compatibility Requirements:

Package type must be TO-220-3 (three-terminal Through Hole configuration)
Pin configuration and lead spacing must be identical

Regulatory Compliance:

RoHS3 compliance status must be maintained
REACH compliance status must be maintained

The FJP13007H2TU manufactured by onsemi qualifies as a substitute based on these criteria. This device exceeds the electrical specifications of the TIP41B PBFREE while maintaining identical mechanical packaging and regulatory compliance.

Parameter Comparison

Parameter	TIP41B PBFREE	FJP13007H2TU	Unit
Manufacturer	Central Semiconductor Corp	onsemi	—
Transistor Type	NPN	NPN	—
Current - Collector (Ic) Max	6	8	A
Voltage - Collector Emitter Breakdown (Max)	80	400	V
Vce Saturation (Max)	1.5 @ 600mA, 6A	3 @ 2A, 8A	V
Power - Max	65	80	W
Frequency - Transition	3	4	MHz
Operating Temperature (Max)	150	150	°C
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Last Time Buy	—

Engineering Selection Recommendations

Substitution Feasibility:

The FJP13007H2TU is electrically and mechanically compatible with the TIP41B PBFREE. The substitute device exceeds all critical electrical specifications: collector current (8 A vs. 6 A), collector-emitter breakdown voltage (400 V vs. 80 V), and power dissipation (80 W vs. 65 W). Both devices maintain identical TO-220-3 Through Hole packaging and pin configuration.

Regulatory Status:

Both the TIP41B PBFREE and FJP13007H2TU are ROHS3 compliant and REACH unaffected, ensuring continued compliance with environmental and hazardous substance regulations.

Product Lifecycle Considerations:

The TIP41B PBFREE is classified as Obsolete, indicating discontinued production and limited availability. The FJP13007H2TU is classified as Last Time Buy, indicating a defined end-of-life window with controlled inventory. For new designs or long-term production requirements, the FJP13007H2TU provides a viable transition path with extended electrical performance margins.

Frequently Asked Questions (FAQ)

Q: Can the FJP13007H2TU directly replace the TIP41B PBFREE in existing circuit designs?

A: Yes. Both devices share identical TO-220-3 package geometry, three-terminal pin configuration, and NPN polarity. The FJP13007H2TU exceeds all electrical specifications of the TIP41B PBFREE, providing design margin for collector current, voltage rating, and power dissipation.

Q: What are the key differences between these two transistors?

A: The FJP13007H2TU provides higher electrical ratings across all parameters: 8 A collector current (vs. 6 A), 400 V breakdown voltage (vs. 80 V), 80 W power dissipation (vs. 65 W), and 4 MHz transition frequency (vs. 3 MHz). Saturation voltage characteristics differ due to the higher current rating of the substitute device.

Q: Are there any thermal management differences?

A: Both devices operate to a maximum junction temperature of 150°C. The FJP13007H2TU has a higher power rating (80 W vs. 65 W), which may reduce thermal stress in applications operating near the TIP41B PBFREE power limit. Thermal management practices should remain consistent with the original design.

Q: What is the significance of the product status classifications?

A: The TIP41B PBFREE is Obsolete, meaning production has ended and availability is limited to existing inventory. The FJP13007H2TU is Last Time Buy, indicating a defined period during which the manufacturer will accept final orders before discontinuation. For production continuity, transition to the FJP13007H2TU should occur within the Last Time Buy window.

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the TIP41B PBFREE and FJP13007H2TU are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations for electronic components.

Q: Can the FJP13007H2TU be used in applications where the TIP41B PBFREE was previously specified?

A: Yes. The higher electrical ratings of the FJP13007H2TU provide compatibility with all applications designed for the TIP41B PBFREE. No circuit modifications are required for direct substitution in TO-220-3 Through Hole mounting positions.

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