TIP35C SL Equivalent & Substitute Parts

Part Overview

The TIP35C SL is a Bipolar (BJT) NPN transistor manufactured by Central Semiconductor Corp, designed for high-current switching and amplification applications. This component features a maximum collector current of 25 A, collector-emitter breakdown voltage of 100 V, and maximum power dissipation of 125 W in a Through Hole TO-218-3 package.

The TIP35C SL is classified as an Obsolete product. Due to its discontinued status, identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production or repair requirements for legacy systems utilizing this component.

Substiute Parts

TIP35C SL

Central Semiconductor CorpIn Stock: 1079TIP35C SL Datasheet

Current PartRFQ

TIP35C

NTE Electronics, IncIn Stock: 35314TIP35C Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TIP35C SL are identified based on strict electrical and mechanical parameter matching. The substitution criteria are:

Electrical Parameters (Must Match):

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 25 A
• Voltage - Collector Emitter Breakdown (Max): 100 V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
• Power - Max: 125 W
• Frequency - Transition: 3 MHz
• Operating Temperature Range: -65°C to 150°C (TJ)

Mechanical Parameters (Must Match):

• Mounting Type: Through Hole
• Package / Case: TO-218-3

The TIP35C manufactured by NTE Electronics, Inc meets all specified electrical and mechanical parameters and qualifies as a direct equivalent substitute for the obsolete Central Semiconductor Corp TIP35C SL.

Parameter Comparison

Engineering Selection Recommendations

The TIP35C manufactured by NTE Electronics, Inc is a direct electrical and mechanical equivalent to the obsolete TIP35C SL from Central Semiconductor Corp. All critical performance parameters match exactly, including collector current rating, breakdown voltage, current gain, power dissipation, transition frequency, and operating temperature range. Both components utilize identical TO-218-3 Through Hole packaging.

The NTE Electronics TIP35C offers the advantage of Active product status, ensuring continued availability and supply chain support. The component is ROHS3 Compliant, meeting current environmental and regulatory requirements for new designs and production environments.

Selection of the NTE Electronics TIP35C as a substitute for the obsolete Central Semiconductor TIP35C SL presents no electrical or mechanical compatibility concerns for applications requiring the specified performance envelope.

Frequently Asked Questions (FAQ)

Q: Can the NTE Electronics TIP35C directly replace the Central Semiconductor TIP35C SL?

A: Yes. Both components are NPN Bipolar (BJT) transistors with identical electrical specifications (25 A maximum collector current, 100 V breakdown voltage, 125 W power dissipation, 3 MHz transition frequency) and identical mechanical packaging (TO-218-3 Through Hole). All critical parameters match exactly.

Q: What is the significance of the TIP35C SL being classified as Obsolete?

A: Obsolete status indicates that the Central Semiconductor Corp TIP35C SL is no longer manufactured or supported by the original supplier. This classification necessitates identification of active equivalent parts to maintain design continuity and ensure component availability for production, repair, and field service applications.

Q: Are there any compliance differences between the two parts?

A: The NTE Electronics TIP35C is ROHS3 Compliant, meeting current environmental regulations. The original Central Semiconductor TIP35C SL compliance status is not specified in the provided data. For applications requiring specific regulatory compliance, the NTE Electronics version provides documented ROHS3 certification.

Q: Does the TO-218-3 package remain the same for both parts?

A: Yes. Both the Central Semiconductor TIP35C SL and the NTE Electronics TIP35C utilize the TO-218-3 Through Hole package. No PCB layout modifications or mechanical redesign is required for substitution.

Q: What is the DC Current Gain specification, and does it match between parts?

A: DC Current Gain (hFE) is specified as a minimum of 10 measured at a collector current of 15 A and collector-emitter voltage of 4 V. Both the Central Semiconductor TIP35C SL and the NTE Electronics TIP35C meet this specification identically.

Q: Is the operating temperature range identical?

A: Yes. Both components operate across the temperature range of -65°C to 150°C (junction temperature). This specification is identical for both the Central Semiconductor TIP35C SL and the NTE Electronics TIP35C.