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TIP35C Equivalent & Substitute Parts
Part Overview
The TIP35C is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 25 A maximum collector current. This device is designed for high-current switching and amplification applications in a Through Hole SOT-93 package configuration. The TIP35C carries an Obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support and procurement planning. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with modified packaging or compliance characteristics.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) Max | 25 | A |
| Voltage - Collector Emitter Breakdown (Max) | 100 | V |
| Power - Max | 125 | W |
| Frequency - Transition | 3 | MHz |
| Operating Temperature Range | -65 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| DC Current Gain (hFE) Min @ Ic, Vce | 15 @ 15A, 4V | — |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 5A, 25A | V |
Substitute Part Grouping Explanation
Substitution of the TIP35C is determined by strict equivalence in the following electrical parameters: NPN transistor type, 25 A maximum collector current, 100 V collector-emitter breakdown voltage, 125 W maximum power dissipation, 3 MHz transition frequency, and -65°C to 150°C operating temperature range. Mechanical compatibility is evaluated based on Through Hole mounting type and pin configuration. Parts are grouped as Direct Manufacturer Equivalents when manufactured by onsemi with identical electrical ratings but different package formats, and as Similar Manufacturer Alternatives when sourced from other manufacturers with equivalent electrical specifications but potentially different secondary parameters such as DC current gain or saturation voltage characteristics.
Parameter Comparison
| Parameter | TIP35C (onsemi) | TIP35CG (onsemi) | TIP35C (NTE Electronics) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | NTE Electronics, Inc |
| Transistor Type | NPN | NPN | NPN |
| Current - Collector (Ic) Max | 25 A | 25 A | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V |
| Power - Max | 125 W | 125 W | 125 W |
| Frequency - Transition | 3 MHz | 3 MHz | 3 MHz |
| Operating Temperature Range | -65 to 150°C (TJ) | -65 to 150°C (TJ) | -65 to 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-218-3 | TO-247-3 | TO-218-3 |
| Product Status | Obsolete | Active | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
The TIP35CG manufactured by onsemi is a Direct Manufacturer Equivalent providing identical electrical performance to the obsolete TIP35C with the primary distinction of package format (TO-247-3 versus TO-218-3) and active product status. The TIP35CG carries ROHS3 compliance certification, addressing regulatory requirements for new designs. Selection of the TIP35CG is appropriate when PCB layout accommodates the TO-247-3 package footprint and ROHS3 compliance is required.
The TIP35C manufactured by NTE Electronics, Inc is a Similar Manufacturer Alternative maintaining equivalent electrical ratings across all critical parameters: 25 A collector current, 100 V breakdown voltage, 125 W power dissipation, and 3 MHz transition frequency. This part retains the TO-218-3 package format matching the original TIP35C pinout and footprint. The NTE Electronics variant carries ROHS3 compliance and Active product status. DC current gain specification differs (10 @ 15A, 4V versus 15 @ 15A, 4V), representing a lower guaranteed minimum gain. Selection of the NTE Electronics TIP35C is appropriate for direct footprint replacement in existing designs where the lower DC current gain specification remains within circuit design margins.
Frequently Asked Questions (FAQ)
Q: Can the TIP35CG substitute for the obsolete TIP35C in existing designs?
A: The TIP35CG provides electrical equivalence across all critical parameters. Substitution requires verification that the TO-247-3 package footprint is compatible with the PCB layout. Pin configuration and electrical performance are identical. The primary consideration is mechanical fit on the circuit board.
Q: What is the difference between the TO-218-3 and TO-247-3 packages?
A: Both packages are Through Hole configurations with three leads. The TO-247-3 package provides enhanced thermal performance through a larger mounting tab. Pin spacing and lead configuration differ between packages, requiring PCB layout verification before substitution.
Q: Is the NTE Electronics TIP35C a direct replacement for the onsemi TIP35C?
A: The NTE Electronics TIP35C maintains identical package format (TO-218-3) and equivalent electrical ratings. The DC current gain minimum specification is lower (10 versus 15 @ 15A, 4V). Substitution is valid when circuit design accommodates the lower guaranteed gain specification.
Q: What compliance certifications apply to substitute parts?
A: The TIP35CG and NTE Electronics TIP35C both carry ROHS3 compliance certification. The original onsemi TIP35C is RoHS non-compliant. Selection of compliant alternatives is necessary for designs subject to ROHS3 regulatory requirements.
Q: Are there inventory considerations for part selection?
A: The onsemi TIP35C (Obsolete) and NTE Electronics TIP35C both show 35,300 units in stock. The TIP35CG (Active) shows 1,234 units in stock. Long-term availability favors the Active product status variants.
Q: Can electrical parameters be verified before substitution?
A: All substitute parts maintain the specified electrical parameters: 25 A collector current, 100 V breakdown voltage, 125 W power dissipation, 3 MHz transition frequency, and -65°C to 150°C operating temperature range. Verification of secondary parameters such as DC current gain and saturation voltage is recommended for critical applications.
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