Equivalent & Substitute Parts for TIP32B-S Bipolar (BJT) Transistor

Part Overview

TIP32B-S, manufactured by Bourns Inc., is a PNP bipolar junction transistor featuring 80 V collector-emitter breakdown, a maximum collector current of 3 A, and a TO-220 through-hole package. The part is obsolete, increasing the need for engineers to identify direct alternatives for ongoing designs, production continuity, and maintenance. Proper substitutes must closely match electrical, mechanical, and compliance parameters as detailed below.

Key Parameters

Parameter	TIP32B-S Value
Transistor Type	PNP
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Power - Max	40 W
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute selection for TIP32B-S is based strictly on matching the transistor type (PNP), maximum collector current (3 A), collector-emitter breakdown voltage (80 V), saturation voltage, cutoff current, DC current gain, mounting type (Through Hole), and package format (TO-220-3). The parts must also maintain ROHS3 compliance for regulatory alignment. Only substitute parts with congruent values across these key electrical, mechanical, and environmental parameters are considered.

Parameter Comparison

Parameter	TIP32B-S (Bourns Inc.)	TIP32BG (onsemi)	BD242B (STMicroelectronics)
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	3 A	3 A	3 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A	1.2V @ 375mA, 3A	1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)	300µA	300µA	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V	10 @ 3A, 4V	25 @ 1A, 4V
Power - Max	40 W	2 W	2 W
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TIP32B-S is obsolete. Substitute selection is determined by matching product status (active/in-stock), and ROHS3 compliance. TIP32BG (onsemi) and BD242B (STMicroelectronics) are active parts currently available, both ROHS3 compliant. These alternatives conform to key electrical and mechanical parameters as provided.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for selecting a TIP32B-S substitute?
A1: The substitute must match transistor type (PNP), collector current (3 A), collector-emitter breakdown voltage (80 V), Vce saturation, cutoff current, DC current gain, mounting type (Through Hole), and package format (TO-220-3). RoHS3 compliance is required.

Q2: Are TIP32BG and BD242B compatible in typical TIP32B-S PCB footprints?
A2: Both TIP32BG and BD242B use the TO-220-3 through-hole package as TIP32B-S, supporting direct mechanical compatibility for PCB mounting.

Q3: How does product status affect substitute selection?
A3: Active status ensures continued availability for new designs and maintenance. Obsolete main parts necessitate selection of active alternatives.

Q4: Does RoHS3 compliance matter in substitute choice?
A4: RoHS3 compliance is required to match environmental regulations, especially in regions mandating restricted substances.

Q5: Are power ratings different across these substitutes?
A5: TIP32B-S has a maximum power rating of 40 W, while both TIP32BG and BD242B specify 2 W. Selection must remain within provided key parameter constraints.

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