TIP32B PNP Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The TIP32B is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 3 A, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 40 W in a Through Hole TO-220-3 package.

The TIP32B is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.

Substiute Parts

TIP32B PBFREE

Central Semiconductor CorpIn Stock: 1176TIP32B PBFREE Datasheet

Current PartRFQ

BD242B

STMicroelectronicsIn Stock: 5245BD242B Datasheet

MFR RecommendedRFQ

TIP32B

Solid State Inc.In Stock: 3193TIP32B Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TIP32B are identified based on strict electrical and mechanical parameter matching within the constraints of this product category. The substitution logic is based on the following critical parameters:

Electrical Parameters (Must Match):

• Transistor Type: PNP
• Maximum Collector Current (Ic): 3 A
• Collector-Emitter Breakdown Voltage: 80 V
• DC Current Gain (hFE) minimum specification: 25 @ 1 A, 4 V
• Collector Cutoff Current: 300 µA maximum

Mechanical Parameters (Must Match):

• Mounting Type: Through Hole
• Package / Case: TO-220-3

Compliance Parameters:

• RoHS3 Compliance required

Substitute parts are grouped into two categories based on their relationship to the main part:

1. Manufacturer Recommended Substitute (MFR Recommended): BD242B by STMicroelectronics
2. Parametric Equivalent: TIP32B by Solid State Inc.

Both substitutes satisfy the electrical and mechanical requirements for direct replacement in applications designed for the original TIP32B.

Parameter Comparison

Engineering Selection Recommendations

BD242B (STMicroelectronics) - Manufacturer Recommended Substitute:

The BD242B is an active product with established supply chain availability (5137 units in stock). This device meets all critical electrical parameters: 3 A maximum collector current, 80 V breakdown voltage, 1.2 V saturation voltage, and 25 minimum DC current gain. The package and mounting type are identical (TO-220-3, Through Hole). RoHS3 compliance is confirmed.

The BD242B is suitable for applications where the original TIP32B is no longer available. The maximum power dissipation specification (2 W) differs from the original (40 W); applications requiring the full 40 W power rating must evaluate thermal requirements independently.

TIP32B (Solid State Inc.) - Parametric Equivalent:

The TIP32B from Solid State Inc. is an active product with full parametric equivalence to the original Central Semiconductor device. All electrical specifications match exactly: 3 A collector current, 80 V breakdown voltage, 1.2 V saturation voltage at 375 mA base current, 25 minimum DC current gain, 40 W power dissipation, and 3 MHz transition frequency. The package, mounting type, and operating temperature range are identical. RoHS3 compliance is confirmed.

This substitute provides direct replacement capability with no design modifications required. Inventory availability is 3122 units.

Selection Criteria:

• For applications requiring full 40 W power dissipation capability: Select TIP32B (Solid State Inc.)
• For applications with lower power requirements: Either substitute is acceptable; BD242B offers higher inventory availability
• Both substitutes are RoHS3 compliant and suitable for Through Hole assembly processes
• Both substitutes support the full operating temperature range of -65°C to 150°C (TJ)

Frequently Asked Questions (FAQ)

Q: Can BD242B replace TIP32B in all applications?

A: BD242B meets the critical electrical parameters (3 A collector current, 80 V breakdown voltage, DC current gain, saturation voltage, and collector cutoff current) and uses the identical TO-220-3 package. However, the maximum power dissipation is specified as 2 W for BD242B versus 40 W for TIP32B. Applications operating at power levels above 2 W require thermal analysis to confirm suitability.

Q: What is the difference between the two TIP32B sources?

A: Both TIP32B devices (Central Semiconductor and Solid State Inc.) share identical electrical specifications and package type. The Central Semiconductor version is obsolete; the Solid State Inc. version is an active product. The Solid State Inc. TIP32B provides full parametric equivalence with current supply availability.

Q: Are all substitutes RoHS3 compliant?

A: Yes. Both BD242B and TIP32B (Solid State Inc.) are confirmed ROHS3 Compliant, meeting environmental and regulatory requirements for electronic component manufacturing and assembly.

Q: Does package type affect substitution?

A: All three parts use the TO-220-3 package with Through Hole mounting. Package compatibility is confirmed for direct mechanical and electrical substitution without PCB redesign.

Q: What parameters must match for substitution?

A: Critical matching parameters are: PNP transistor type, 3 A maximum collector current, 80 V collector-emitter breakdown voltage, 1.2 V saturation voltage specification, 25 minimum DC current gain, 300 µA maximum collector cutoff current, TO-220-3 package, and Through Hole mounting type. Power dissipation and frequency specifications should be evaluated based on application requirements.

Q: Can these substitutes be used in new designs?

A: Yes. Both BD242B and TIP32B (Solid State Inc.) are active products suitable for new design implementations. The TIP32B from Solid State Inc. provides full parametric equivalence to the original specification. BD242B is suitable for applications within its 2 W power rating.