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TIP32B Equivalent & Substitute Parts
Part Overview
The TIP32B is a PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 3 A maximum collector current in a TO-220 through-hole package. The device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts are selected based on electrical performance parameters, mechanical compatibility, and package specifications that permit direct functional replacement in circuit applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 3 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Vce Saturation (Max) @ Ib, Ic | 1.2 @ 375mA, 3A | V |
| Power - Max | 2 | W |
| Frequency - Transition | 3 | MHz |
| Operating Temperature | -65 to 150 | °C (TJ) |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitute parts for the TIP32B are classified into two categories based on electrical parameter compatibility:
Direct Equivalents maintain identical or equivalent electrical specifications across all critical parameters: collector current (3 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.2 V @ 375mA, 3A), power dissipation (2 W), and transition frequency (3 MHz). These parts are pin-compatible and functionally interchangeable without circuit modification.
Functional Substitutes provide enhanced electrical performance in one or more parameters while maintaining compatibility with the primary application requirements. These parts may exceed the original specifications in collector current, power rating, or voltage rating, permitting their use in circuits designed for the TIP32B.
Substitution eligibility is determined by the following criteria:
- Transistor type must be PNP
- Collector-emitter breakdown voltage must equal or exceed 80 V
- Maximum collector current must equal or exceed 3 A
- Package must be TO-220-3 with through-hole mounting
- Saturation voltage and transition frequency must be compatible with circuit design parameters
Parameter Comparison
| Parameter | TIP32B | TIP32BG | BD242B | TIP32C | KSB596YTU |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | STMicroelectronics | STMicroelectronics | onsemi |
| Product Status | Obsolete | Active | Active | Active | Last Time Buy |
| Transistor Type | PNP | PNP | PNP | PNP | PNP |
| Current - Collector (Ic) (Max) | 3 A | 3 A | 3 A | 3 A | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 80 V | 100 V | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 1.2V @ 600mA, 3A | 1.2V @ 375mA, 3A | 1.7V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 300µA | 300µA | 300µA | 300µA | 70µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | 10 @ 3A, 4V | 25 @ 1A, 4V | 10 @ 3A, 4V | 120 @ 500mA, 5V |
| Power - Max | 2 W | 2 W | 2 W | 2 W | 30 W |
| Frequency - Transition | 3 MHz | 3 MHz | — | — | 3 MHz |
| Operating Temperature | -65 to 150°C | -65 to 150°C | — | 150°C | 150°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS Status | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
TIP32BG is the primary direct equivalent for the TIP32B. This onsemi component maintains identical electrical specifications across all critical parameters and is available in active product status with ROHS3 compliance. The TIP32BG is supplied in tube packaging and represents the recommended replacement for obsolete TIP32B applications requiring equivalent performance characteristics.
BD242B manufactured by STMicroelectronics provides direct electrical equivalence to the TIP32B with identical collector current (3 A), breakdown voltage (80 V), saturation voltage (1.2 V @ 600mA, 3A), and power rating (2 W). This component is active and ROHS3 compliant. The BD242B is suitable for applications where STMicroelectronics sourcing is preferred or required.
TIP32C manufactured by STMicroelectronics offers enhanced voltage rating (100 V versus 80 V) while maintaining identical collector current (3 A), saturation voltage (1.2 V @ 375mA, 3A), and power dissipation (2 W). This component is active and ROHS3 compliant with high inventory availability. The TIP32C is applicable in circuits where increased voltage margin is beneficial.
KSB596YTU manufactured by onsemi provides enhanced performance with increased collector current (4 A), significantly higher power rating (30 W), and improved DC current gain (120 @ 500mA, 5V). This component maintains 80 V breakdown voltage and 3 MHz transition frequency. The KSB596YTU is classified as last time buy and is suitable for applications requiring higher power dissipation capability or increased current handling.
Frequently Asked Questions (FAQ)
Q: Can the TIP32BG directly replace the TIP32B without circuit modification?
A: Yes. The TIP32BG maintains identical electrical specifications for collector current (3 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.2 V @ 375mA, 3A), power rating (2 W), and transition frequency (3 MHz). Pin configuration and TO-220-3 package are identical, permitting direct substitution.
Q: What is the primary difference between TIP32B and TIP32C?
A: The TIP32C features a higher collector-emitter breakdown voltage rating of 100 V compared to the TIP32B at 80 V. All other electrical parameters, including collector current (3 A), saturation voltage (1.2 V @ 375mA, 3A), and power dissipation (2 W), remain equivalent. The TIP32C is suitable for applications requiring increased voltage margin.
Q: Is the KSB596YTU compatible with TIP32B circuit designs?
A: The KSB596YTU is electrically compatible with the TIP32B for applications where enhanced performance is acceptable. The KSB596YTU provides higher collector current (4 A versus 3 A) and significantly higher power rating (30 W versus 2 W). However, the saturation voltage is higher (1.7 V @ 300mA, 3A versus 1.2 V @ 375mA, 3A) and DC current gain is substantially higher (120 @ 500mA, 5V versus 10 @ 3A, 4V). Circuit verification is required to confirm compatibility with specific design parameters.
Q: Are all substitute parts ROHS3 compliant?
A: The TIP32B is RoHS non-compliant. All substitute parts listed (TIP32BG, BD242B, TIP32C, and KSB596YTU) are ROHS3 compliant. This compliance status must be verified against specific procurement requirements.
Q: What packaging options are available for substitute parts?
A: All substitute parts are supplied in TO-220-3 through-hole packages. TIP32BG and KSB596YTU are supplied in tube packaging. BD242B and TIP32C are supplied in tube packaging. Package compatibility with existing PCB designs is maintained across all substitutes.
Q: Why is KSB596YTU classified as last time buy?
A: The KSB596YTU is in last time buy status, indicating that the manufacturer has announced end-of-life production. Existing inventory is available, but future availability is not guaranteed. For long-term production requirements, TIP32BG, BD242B, or TIP32C are recommended as these components maintain active product status.
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