TIP31C PBFREE Equivalent & Substitute Parts

Part Overview

The TIP31C PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 3 A, collector-emitter breakdown voltage of 100 V, and maximum power dissipation of 40 W in a Through Hole TO-220-3 package.

The TIP31C PBFREE is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with identical or compatible electrical and mechanical specifications are available from other manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	3	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 375 mA, 3 A	V
Current - Collector Cutoff (Max)	300	µA
Power - Max	40	W
Frequency - Transition	3	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the TIP31C PBFREE is determined by strict alignment of the following critical parameters:

Electrical Compatibility Criteria:

Transistor Type: NPN
Maximum Collector Current (Ic): 3 A
Collector-Emitter Breakdown Voltage: 100 V
Vce Saturation: 1.2 V @ 375 mA, 3 A
Transition Frequency: 3 MHz
Operating Temperature Range: -65°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package / Case: TO-220-3

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected

Substitute parts must satisfy all electrical parameters within the specified tolerances and maintain identical mechanical packaging and through-hole mounting configuration. Variations in maximum power dissipation, DC current gain (hFE), and collector cutoff current do not disqualify substitution when all primary electrical and mechanical parameters align.

Parameter Comparison

Parameter	TIP31C PBFREE (Central Semiconductor)	TIP31CG (onsemi)	TIP31C (Fairchild Semiconductor)
Manufacturer	Central Semiconductor Corp	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) Max	3 A	3 A	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 375 mA, 3 A	1.2 V @ 375 mA, 3 A	1.2 V @ 375 mA, 3 A
Current - Collector Cutoff (Max)	300 µA	300 µA	200 µA
Power - Max	40 W	2 W	40 W
Frequency - Transition	3 MHz	3 MHz	3 MHz
Operating Temperature Range	-65 to 150 °C (TJ)	-65 to 150 °C (TJ)	Not specified
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

TIP31CG (onsemi) - MFR Recommended Substitute

The TIP31CG from onsemi is the manufacturer-recommended substitute for the TIP31C PBFREE. This part maintains full electrical compatibility across all critical parameters: 3 A maximum collector current, 100 V breakdown voltage, and identical saturation characteristics. The device is Active status with high inventory availability (6666 pcs). RoHS3 compliance and REACH unaffected status align with regulatory requirements.

Note: The TIP31CG specifies 2 W maximum power dissipation compared to 40 W for the original part. This specification difference does not affect substitution eligibility for applications within the 2 W thermal envelope. Applications requiring full 40 W dissipation capability should reference the Fairchild Semiconductor alternative.

TIP31C (Fairchild Semiconductor) - Parametric Equivalent

The TIP31C from Fairchild Semiconductor is a parametric equivalent offering identical electrical performance to the TIP31C PBFREE, including 40 W maximum power dissipation. This part is Active status with substantial inventory (69348 pcs). All critical electrical parameters match: 3 A collector current, 100 V breakdown voltage, and 1.2 V saturation voltage. Through-hole TO-220-3 packaging ensures mechanical compatibility.

The Fairchild part specifies 200 µA maximum collector cutoff current compared to 300 µA for the original, representing improved leakage performance. Operating temperature range is not specified in available documentation.

Selection Basis:

Both substitutes maintain NPN transistor type, 3 A maximum collector current, and 100 V breakdown voltage
Both support Through Hole TO-220-3 mounting configuration
Both are RoHS3 compliant and REACH unaffected
onsemi TIP31CG is manufacturer-recommended; Fairchild TIP31C provides full 40 W power rating
Active product status ensures ongoing availability and supply chain continuity

Frequently Asked Questions (FAQ)

Q: Can the TIP31CG (onsemi) be used as a direct replacement for the TIP31C PBFREE in all applications?

A: The TIP31CG is electrically compatible for all applications within its 2 W maximum power dissipation specification. Applications requiring sustained power dissipation above 2 W should use the Fairchild Semiconductor TIP31C (40 W rating) or verify thermal management capability for the specific circuit design.

Q: What is the significance of the different maximum power ratings between TIP31CG (2 W) and TIP31C PBFREE (40 W)?

A: Maximum power rating reflects the thermal dissipation capability under specified conditions. Both devices share identical electrical characteristics (3 A, 100 V, saturation voltage). The power rating difference indicates different thermal design or package mounting assumptions. Circuit designers must verify that actual power dissipation in the application does not exceed the selected part's rating.

Q: Are the TO-220-3 packages from different manufacturers mechanically interchangeable?

A: Yes. Both substitute parts use the standard TO-220-3 package, which is mechanically identical across manufacturers. Pin configuration, lead spacing, and mounting hole dimensions are standardized, enabling direct PCB compatibility.

Q: What does "Parametric Equivalent" mean for the Fairchild TIP31C?

A: Parametric equivalent indicates that the part meets or exceeds all specified electrical parameters of the original device. The Fairchild TIP31C matches the TIP31C PBFREE across collector current, breakdown voltage, saturation characteristics, and frequency response, making it suitable for direct substitution in circuit designs.

Q: Are both substitute parts RoHS3 compliant?

A: Yes. Both the onsemi TIP31CG and Fairchild Semiconductor TIP31C are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What is the difference in DC current gain (hFE) specifications between the parts?

A: The TIP31C PBFREE specifies hFE minimum of 25 @ 1 A, 4 V. Both substitutes specify hFE minimum of 10 @ 3 A, 4 V. These measurements are taken at different collector current levels, making direct comparison inappropriate. Circuit designs should not depend on specific hFE values; instead, use feedback networks or current-limiting techniques to ensure stable operation across the specified hFE range.

Q: Which substitute part should be selected for new designs?

A: For new designs, the onsemi TIP31CG is recommended as the manufacturer-designated substitute with active production status and high availability. For applications requiring 40 W power dissipation capability, the Fairchild Semiconductor TIP31C is the appropriate selection. Both parts are active and support long-term supply chain continuity.

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