TIP30CTU Equivalent & Substitute Parts

Part Overview

The TIP30CTU is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 1 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The TIP30CTU serves in general-purpose switching and amplification applications requiring moderate current handling at moderate voltage levels.

Key Parameters

Parameter	Value
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100 V
Current - Collector (Ic) (Max)	1 A
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Power - Max	2 W
Frequency - Transition	3MHz
Operating Temperature (TJ)	150°C
Mounting Type	Through Hole
Package / Case	TO-220-3

Substitute Part Grouping Explanation

Substitution of the TIP30CTU is determined by matching the following critical electrical and mechanical parameters: transistor type (PNP), collector-emitter breakdown voltage (100 V minimum), collector current rating (1 A minimum), power dissipation capability (2 W minimum), transition frequency (3MHz minimum), and through-hole TO-220-3 package configuration.

Substitute parts are grouped into two categories:

Direct Equivalents: Parts that maintain identical electrical specifications and package form factor, differing only in product status or packaging format.

Functional Substitutes: Parts that exceed the TIP30CTU specifications in one or more parameters (higher current rating, higher power dissipation, or higher voltage rating) while maintaining compatibility with the same package and mounting configuration. These parts are backward-compatible for applications requiring the TIP30CTU baseline performance.

Parameter Comparison

Part Number	Manufacturer	Ic (Max)	Vce Breakdown (Max)	Power (Max)	Frequency (Transition)	Package	Product Status	RoHS Compliance
TIP30CTU	onsemi	1 A	100 V	2 W	3MHz	TO-220-3	Obsolete	Not Specified
TIP30CG	onsemi	1 A	100 V	2 W	3MHz	TO-220-3	Active	ROHS3 Compliant
TIP32CG	onsemi	3 A	100 V	2 W	3MHz	TO-220-3	Active	ROHS3 Compliant
TIP32C	STMicroelectronics	3 A	100 V	2 W	Not Specified	TO-220-3	Active	ROHS3 Compliant
TIP32C-BP	Micro Commercial Co	3 A	100 V	2 W	3MHz	TO-220-3	Active	ROHS3 Compliant
TIP42CG	onsemi	6 A	100 V	2 W	3MHz	TO-220-3	Active	ROHS3 Compliant
TIP42C-BP	Micro Commercial Co	6 A	100 V	2 W	3MHz	TO-220-3	Active	ROHS3 Compliant
BD242CG	onsemi	3 A	100 V	40 W	3MHz	TO-220-3	Active	ROHS3 Compliant
BD244CG	onsemi	6 A	100 V	65 W	3MHz	TO-220-3	Active	ROHS3 Compliant
MJE15029G	onsemi	8 A	120 V	50 W	30MHz	TO-220-3	Active	ROHS3 Compliant
BD912	NTE Electronics, Inc	15 A	100 V	90 W	3MHz	TO-220-3	Active	RoHS non-compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

TIP30CG is the direct equivalent to TIP30CTU. Both devices share identical electrical specifications: 1 A maximum collector current, 100 V collector-emitter breakdown voltage, 2 W power dissipation, and 3MHz transition frequency. TIP30CG is manufactured by onsemi in active product status with ROHS3 compliance, providing the most straightforward replacement path for obsolete TIP30CTU applications.

Active Substitutes with Higher Current Ratings:

TIP32CG, TIP32C, and TIP32C-BP are active PNP transistors rated for 3 A collector current at 100 V breakdown voltage. These parts are suitable for applications where the TIP30CTU baseline 1 A specification is adequate but higher current margin is desired. All three maintain the TO-220-3 package and 100 V voltage rating. TIP32CG and TIP32C-BP are ROHS3 compliant; TIP32C is ROHS3 compliant with STMicroelectronics sourcing.

TIP42CG and TIP42C-BP are rated for 6 A collector current at 100 V breakdown voltage, providing additional current headroom for designs requiring higher switching capacity within the same voltage envelope.

Active Substitutes with Enhanced Power Dissipation:

BD242CG and BD244CG offer significantly higher power dissipation ratings (40 W and 65 W respectively) while maintaining 100 V breakdown voltage and TO-220-3 package configuration. BD242CG is rated for 3 A collector current; BD244CG is rated for 6 A. These parts are suitable for applications requiring thermal performance beyond the TIP30CTU 2 W specification.

High-Performance Substitute:

MJE15029G is rated for 8 A collector current, 120 V breakdown voltage, 50 W power dissipation, and 30MHz transition frequency. This part exceeds TIP30CTU specifications across multiple parameters and is suitable for applications requiring enhanced frequency response and current handling.

Non-Compliant Alternative:

BD912 (NTE Electronics) is rated for 15 A collector current and 90 W power dissipation at 100 V breakdown voltage. This part is RoHS non-compliant and should be selected only when RoHS compliance is not a design requirement.

Frequently Asked Questions (FAQ)

Q: Can TIP30CG directly replace TIP30CTU in existing designs?

A: Yes. TIP30CG is the direct equivalent with identical electrical specifications and TO-220-3 package configuration. The primary difference is product status: TIP30CTU is obsolete while TIP30CG is active. TIP30CG is ROHS3 compliant, making it suitable for new designs and production continuity.

Q: What is the difference between TIP32CG and TIP42CG?

A: Both are onsemi PNP transistors in TO-220-3 packages rated for 100 V breakdown voltage. TIP32CG is rated for 3 A maximum collector current; TIP42CG is rated for 6 A. Both maintain 2 W power dissipation and 3MHz transition frequency. TIP42CG provides higher current capacity for applications requiring greater switching current.

Q: Can I use BD242CG or BD244CG as substitutes for TIP30CTU?

A: Yes, with consideration for thermal design. BD242CG and BD244CG are rated for 40 W and 65 W power dissipation respectively, compared to TIP30CTU's 2 W rating. These parts are suitable for applications where the TIP30CTU baseline 1 A specification is adequate but higher thermal capacity is required. Both maintain 100 V breakdown voltage and TO-220-3 package configuration.

Q: What is the advantage of MJE15029G over other substitutes?

A: MJE15029G offers the highest transition frequency (30MHz) among available substitutes, compared to 3MHz for most alternatives. It is also rated for 8 A collector current and 120 V breakdown voltage. This part is suitable for applications requiring enhanced frequency response and higher voltage margin.

Q: Are all substitute parts ROHS3 compliant?

A: No. BD912 (NTE Electronics) is RoHS non-compliant. All onsemi, STMicroelectronics, and Micro Commercial Co parts listed are ROHS3 compliant. Verify RoHS compliance requirements for your application before part selection.

Q: Can I use TIP32C from STMicroelectronics instead of TIP30CG from onsemi?

A: Yes. TIP32C shares identical electrical specifications with TIP30CG: 3 A collector current, 100 V breakdown voltage, 2 W power dissipation, and TO-220-3 package. Both are ROHS3 compliant and active products. The primary difference is manufacturer sourcing.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole TO-220 package variants. TO-220-3 is the standard three-lead configuration. TO-220AB is a variant designation used by some manufacturers for the same physical package. Parts specified as TO-220AB (TIP32C-BP, TIP42C-BP) are mechanically and electrically compatible with TO-220-3 applications.

Q: Should I select a substitute with higher power dissipation than TIP30CTU?

A: Higher power dissipation rating does not require selection. If your application operates within TIP30CTU specifications (1 A collector current, 2 W power dissipation), any substitute meeting or exceeding these parameters is suitable. Higher power ratings provide thermal margin but do not alter electrical performance at rated operating points.

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