TIP30A Equivalent & Substitute Parts

Part Overview

The TIP30A is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 60 V collector-emitter breakdown voltage and 1 A maximum collector current in a Through Hole TO-220-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The TIP30A serves applications requiring moderate power dissipation (2 W maximum) and PNP switching or amplification in industrial and consumer electronics.

Substiute Parts

TIP30A

STMicroelectronicsIn Stock: 1545TIP30A Datasheet

Current PartRFQ

KSA473YTU

onsemiIn Stock: 2102KSA473YTU Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the TIP30A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor polarity must be PNP
• Package must be TO-220-3 (Through Hole mounting)
• Collector-emitter breakdown voltage must equal or exceed 60 V
• Maximum collector current must equal or exceed 1 A
• Maximum power dissipation must equal or exceed 2 W
• Operating temperature range must support 150°C junction temperature

Secondary Compatibility Factors:

• Vce saturation characteristics
• DC current gain (hFE) performance
• Collector cutoff current (Icbo)

The KSA473YTU manufactured by onsemi meets the mechanical packaging requirement (TO-220-3) and polarity requirement (PNP). However, this substitute exhibits reduced voltage rating (30 V versus 60 V) and therefore operates within a constrained voltage envelope compared to the original TIP30A specification.

Parameter Comparison

Engineering Selection Recommendations

TIP30A (STMicroelectronics): The TIP30A is classified as obsolete and carries RoHS non-compliant status. This part remains suitable for legacy system maintenance and repair applications where original specifications are mandated. New design implementations should not incorporate this component.

KSA473YTU (onsemi): The KSA473YTU is ROHS3 compliant and carries active product status, making it the preferred choice for new designs and production continuity. This substitute provides superior electrical performance in collector current capacity (3 A versus 1 A) and power dissipation (10 W versus 2 W). The reduced collector-emitter breakdown voltage (30 V versus 60 V) restricts application to circuits operating at 30 V or below. The KSA473YTU exhibits higher DC current gain (120 minimum versus 15 minimum), lower collector cutoff current (1 µA versus 300 µA), and specified transition frequency (100 MHz), indicating improved switching characteristics suitable for higher-frequency applications.

Selection between these parts depends on circuit voltage requirements. Applications operating at voltages exceeding 30 V require the TIP30A or equivalent 60 V rated device. Applications operating at 30 V or below benefit from KSA473YTU substitution due to improved compliance status and enhanced electrical performance.

Frequently Asked Questions (FAQ)

Q: Can the KSA473YTU directly replace the TIP30A in all applications?

A: Direct replacement is limited by voltage rating. The KSA473YTU is rated for 30 V maximum collector-emitter breakdown voltage, while the TIP30A is rated for 60 V. Substitution is valid only in circuits where the maximum applied voltage does not exceed 30 V. Circuits designed for 60 V operation require a substitute with equivalent or higher voltage rating.

Q: Are the TO-220-3 packages mechanically identical?

A: Both the TIP30A and KSA473YTU use the TO-220-3 Through Hole package. Mechanical compatibility is confirmed, allowing direct PCB mounting without modification. Pin configuration (base, collector, emitter) follows standard TO-220-3 convention for both devices.

Q: What is the significance of the RoHS compliance difference?

A: The TIP30A is RoHS non-compliant, while the KSA473YTU is ROHS3 compliant. For applications subject to RoHS regulations or customer requirements mandating RoHS compliance, the KSA473YTU is the required selection. The TIP30A remains acceptable for legacy systems and applications without RoHS constraints.

Q: How do the current gain characteristics affect circuit design?

A: The KSA473YTU exhibits significantly higher minimum DC current gain (120 @ 500 mA, 2 V) compared to the TIP30A (15 @ 1 A, 4 V). Higher current gain reduces base drive requirements, allowing smaller base resistors or lower base current sources. This difference impacts bias network design and switching speed in amplifier and switching applications.

Q: Is the KSA473YTU suitable for high-frequency applications?

A: The KSA473YTU specifies a transition frequency of 100 MHz, indicating capability for higher-frequency switching and amplification. The TIP30A does not specify transition frequency. For applications requiring switching frequencies in the megahertz range, the KSA473YTU provides documented performance characteristics.

Q: What are the implications of different Vce saturation ratings?

A: The TIP30A saturates at 700 mV maximum (125 mA, 1 A), while the KSA473YTU saturates at 800 mV maximum (200 mA, 2 A). Both values are typical for power transistors in saturation mode. The 100 mV difference is negligible in most switching applications but may affect power dissipation calculations in high-current, continuous-conduction scenarios.

Q: Can the KSA473YTU handle higher collector currents than the TIP30A?

A: Yes. The KSA473YTU is rated for 3 A maximum collector current, compared to 1 A for the TIP30A. Applications requiring collector currents between 1 A and 3 A benefit from the KSA473YTU's higher current capacity. Power dissipation capability also increases from 2 W to 10 W, supporting higher-power applications within the 30 V voltage constraint.