TIP3055 Equivalent & Substitute Parts

Part Overview

The TIP3055 is a Bipolar (BJT) NPN transistor manufactured by onsemi, designed for high-current switching and amplification applications. The device is rated for 60 V collector-emitter breakdown voltage with a maximum collector current of 15 A and 90 W power dissipation. The TIP3055 is packaged in SOT-93 (TO-218-3) through-hole configuration and operates across a temperature range of -65°C to 150°C.

The TIP3055 is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure component availability, and support ongoing production requirements for legacy systems and applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	15	A
Voltage - Collector Emitter Breakdown (Max)	60	V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A	—
Current - Collector Cutoff (Max)	700	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V	—
Power - Max	90	W
Frequency - Transition	2.5	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the TIP3055 are identified based on electrical and mechanical parameter equivalence. The following criteria determine substitution eligibility:

Electrical Parameters (Must Match):

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700 µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 90 W
Frequency - Transition: 2.5 MHz
Operating Temperature Range: -65°C to 150°C

Mechanical Parameters (Must Match):

Mounting Type: Through Hole
Base Product Number: TIP30 series

Substitute parts may differ in package configuration (TO-218-3 versus TO-247-3) and product status (obsolete versus active), provided all electrical specifications remain identical.

Parameter Comparison

Parameter	TIP3055	TIP3055G	Match
Manufacturer	onsemi	onsemi	✓
Transistor Type	NPN	NPN	✓
Current - Collector (Ic) (Max)	15 A	15 A	✓
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	✓
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A	3V @ 3.3A, 10A	✓
Current - Collector Cutoff (Max)	700 µA	700 µA	✓
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V	20 @ 4A, 4V	✓
Power - Max	90 W	90 W	✓
Frequency - Transition	2.5 MHz	2.5 MHz	✓
Operating Temperature Range	-65°C to 150°C	-65°C to 150°C	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-218-3	TO-247-3	Different
Product Status	Obsolete	Active	Different
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Different

Engineering Selection Recommendations

TIP3055G is the direct electrical equivalent to the TIP3055. All electrical parameters, including collector current, breakdown voltage, saturation characteristics, current gain, power rating, transition frequency, and operating temperature range, are identical.

Package Consideration: The TIP3055G uses TO-247-3 packaging instead of the original TO-218-3 (SOT-93) packaging. Both are through-hole configurations with different mechanical footprints. PCB layout modifications are required when substituting between these packages.

Product Status and Compliance: The TIP3055 is classified as obsolete, while the TIP3055G is active. The TIP3055G is ROHS3 compliant, whereas the original TIP3055 is RoHS non-compliant. For new designs or systems requiring regulatory compliance, the TIP3055G is the appropriate selection. For legacy system maintenance where the original package footprint must be preserved, alternative sourcing of the original TIP3055 may be necessary.

Availability: The TIP3055G is currently in active production with documented inventory availability, supporting long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the TIP3055G directly replace the TIP3055 in existing circuits?

A: The TIP3055G is electrically equivalent to the TIP3055 across all specified parameters. However, the TO-247-3 package footprint differs from the original TO-218-3 package. PCB layout modifications are required. Verify that the mechanical footprint, lead spacing, and mounting hole positions are compatible with your application before substitution.

Q: What is the primary difference between TIP3055 and TIP3055G?

A: The primary differences are package configuration (TO-218-3 versus TO-247-3), product status (obsolete versus active), and RoHS compliance (non-compliant versus ROHS3 compliant). All electrical specifications are identical.

Q: Is the TIP3055G suitable for new product designs?

A: Yes. The TIP3055G is an active product with ROHS3 compliance, making it suitable for new designs. It provides the same electrical performance as the TIP3055 with improved regulatory compliance and ongoing manufacturer support.

Q: Are there thermal considerations when switching from TO-218-3 to TO-247-3 packaging?

A: Both packages are rated for 90 W maximum power dissipation. Thermal performance depends on PCB layout, heatsink design, and thermal interface materials. Consult the manufacturer's thermal specifications for each package to ensure adequate heat dissipation in your specific application.

Q: What is the base product number for these transistors?

A: The base product number is TIP30, which identifies the TIP30 series of NPN power transistors from onsemi. The TIP3055 and TIP3055G are variants within this series.

Q: Can I use the TIP3055 in applications requiring RoHS compliance?

A: No. The TIP3055 is RoHS non-compliant. For applications requiring RoHS compliance, use the TIP3055G, which is ROHS3 compliant.

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