TIP3055 Equivalent & Substitute Parts

Part Overview

The TIP3055 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for high-current switching and amplification applications. This through-hole component operates at 60 V collector-emitter breakdown voltage with a maximum collector current of 15 A and power dissipation capability of 90 W in a TO-247-3 package. The part maintains Active product status with extensive inventory availability. Substitute parts are identified to provide alternative sourcing options when the primary manufacturer part is unavailable or when design flexibility across qualified manufacturers is required.

Substiute Parts

TIP3055
STMicroelectronicsIn Stock: 62956TIP3055 Datasheet
TIP3055
Current Part
TIP3055G
onsemiIn Stock: 1309TIP3055G Datasheet
TIP3055G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 90 W
Package / Case TO-247-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TIP3055 is determined by electrical and mechanical parameter equivalence. The critical parameters that define substitutability are:

  • Transistor Type: NPN configuration
  • Maximum Collector Current (Ic): 15 A minimum
  • Collector-Emitter Breakdown Voltage (Vce(br)ceo): 60 V minimum
  • Maximum Power Dissipation: 90 W minimum
  • Saturation Voltage Characteristics: 3 V @ 3.3A, 10A
  • DC Current Gain (hFE): 20 @ 4A, 4V minimum
  • Package: TO-247-3 through-hole configuration
  • Compliance: ROHS3 Compliant, REACH Unaffected

The TIP3055G from onsemi meets all electrical and mechanical requirements for direct substitution. Both parts share identical maximum ratings for collector current, breakdown voltage, power dissipation, saturation voltage, and current gain specifications. Both are packaged in TO-247-3 and maintain equivalent compliance certifications.

Parameter Comparison

Parameter TIP3055 (STMicroelectronics) TIP3055G (onsemi) Match
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A 3V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 90 W 90 W
Package / Case TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Both the TIP3055 (STMicroelectronics) and TIP3055G (onsemi) are Active product status components with full ROHS3 compliance and REACH unaffected status. Selection between these parts is based on availability and supply chain requirements rather than electrical or mechanical differences.

The TIP3055 from STMicroelectronics is the primary part with 62,913 pieces in stock. The TIP3055G from onsemi provides equivalent electrical performance and mechanical compatibility with 1,207 pieces available. Both parts are suitable for direct substitution in applications requiring NPN transistors rated for 15 A collector current, 60 V breakdown voltage, and 90 W power dissipation in TO-247-3 through-hole packages.

Frequently Asked Questions (FAQ)

Q: Can TIP3055G replace TIP3055 in existing designs?

A: Yes. The TIP3055G meets all electrical and mechanical specifications of the TIP3055. Both parts share identical maximum ratings for collector current (15 A), breakdown voltage (60 V), power dissipation (90 W), saturation voltage characteristics, and DC current gain. Both use the TO-247-3 package and are ROHS3 compliant.

Q: Are there differences in operating temperature ranges?

A: The TIP3055 specifies a maximum operating temperature of 150°C (TJ). The TIP3055G specifies an operating temperature range of −65°C to 150°C (TJ). Both parts operate within the same maximum temperature limit. The TIP3055G provides extended low-temperature capability.

Q: Do both parts use the same package footprint?

A: Yes. Both the TIP3055 and TIP3055G use the TO-247-3 through-hole package. Pin configuration and mechanical dimensions are identical, allowing direct board-level substitution without layout modifications.

Q: What is the significance of the "G" suffix in TIP3055G?

A: The "G" suffix indicates the onsemi manufacturer designation. It does not reflect a different electrical specification or performance tier. The part is electrically and mechanically equivalent to the TIP3055.

Q: Are both parts suitable for high-current switching applications?

A: Yes. Both parts are rated for 15 A maximum collector current and 90 W power dissipation, making them suitable for high-current switching and amplification applications within these electrical limits.

Q: What compliance certifications apply to both parts?

A: Both the TIP3055 and TIP3055G are ROHS3 compliant and REACH unaffected. Both carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

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