TIP29 PBFREE Equivalent & Substitute Parts

Part Overview

The TIP29 PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a TO-220-3 through-hole package with a maximum collector current of 1 A and collector-emitter breakdown voltage of 40 V. The TIP29 PBFREE is classified as obsolete, making identification of functionally compatible substitute parts essential for ongoing design support and production continuity. Equivalent parts must maintain electrical performance within specified operating parameters while accommodating modern component availability and compliance requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	40	V
Current - Collector (Ic) (Max)	1	A
Power - Max	30	W
Frequency - Transition	3	MHz
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature Range	-65 to 150	°C

Substitute Part Grouping Explanation

Substitute parts for the TIP29 PBFREE are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

Transistor type must be NPN
Package must be TO-220-3 through-hole configuration
Collector-emitter breakdown voltage must equal or exceed 40 V
Maximum collector current must equal or exceed 1 A
Maximum power dissipation must equal or exceed 30 W
Transition frequency must equal or exceed 3 MHz
Operating temperature range must encompass the required application range

The KSD880YTU meets all substitution criteria with enhanced electrical ratings, providing superior performance margins in voltage, current, and gain characteristics while maintaining identical package geometry and thermal management capability.

Parameter Comparison

Parameter	TIP29 PBFREE	KSD880YTU	Unit
Manufacturer	Central Semiconductor Corp	onsemi	—
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	40	60	V
Current - Collector (Ic) (Max)	1	3	A
Vce Saturation (Max)	700 mV @ 125 mA, 1 A	1 V @ 300 mA, 3 A	—
DC Current Gain (hFE) (Min)	40 @ 200 mA, 4 V	100 @ 500 mA, 5 V	—
Power - Max	30	30	W
Frequency - Transition	3	3	MHz
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
Operating Temperature (Max)	150	150	°C
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The KSD880YTU is the designated manufacturer-recommended substitute for the obsolete TIP29 PBFREE. Selection of this substitute is based on the following engineering factors:

Product Status Consideration: The TIP29 PBFREE is classified as obsolete, whereas the KSD880YTU maintains active product status with established supply chain availability. This transition ensures long-term component sourcing reliability.

Compliance Alignment: Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility across manufacturing jurisdictions.

Electrical Performance: The KSD880YTU provides enhanced electrical ratings across all critical parameters. The increased collector-emitter breakdown voltage (60 V versus 40 V), collector current capacity (3 A versus 1 A), and DC current gain (100 versus 40) establish superior performance margins for circuit operation.

Package and Thermal Compatibility: Identical TO-220-3 through-hole packaging and 30 W maximum power dissipation enable direct mechanical and thermal substitution without PCB redesign or heatsink modification.

Frequency Characteristics: Both devices share identical 3 MHz transition frequency, maintaining switching speed performance in target applications.

Frequently Asked Questions (FAQ)

Q: Can the KSD880YTU directly replace the TIP29 PBFREE in existing circuit designs?

A: Yes. The KSD880YTU is electrically and mechanically compatible with the TIP29 PBFREE. Identical TO-220-3 package geometry permits direct pin-for-pin substitution. Enhanced electrical ratings (60 V breakdown, 3 A collector current) provide performance margins that accommodate circuits designed for the original 40 V, 1 A specifications.

Q: What are the key differences between these two transistors?

A: The KSD880YTU provides higher voltage and current ratings compared to the TIP29 PBFREE. Collector-emitter breakdown voltage increases from 40 V to 60 V, maximum collector current increases from 1 A to 3 A, and DC current gain increases from 40 to 100. Maximum power dissipation and transition frequency remain identical at 30 W and 3 MHz respectively.

Q: Are there any thermal management differences between these devices?

A: Both devices are rated for 30 W maximum power dissipation in TO-220-3 packages. Thermal management requirements remain equivalent. Identical package geometry ensures compatibility with existing heatsink and mounting hardware.

Q: What is the significance of the product status change from obsolete to active?

A: The transition from obsolete (TIP29 PBFREE) to active (KSD880YTU) status ensures reliable long-term component availability. Active products maintain established supply chains, consistent manufacturing processes, and documented technical support. This eliminates supply discontinuity risks associated with obsolete components.

Q: Are compliance certifications maintained with this substitution?

A: Yes. Both the TIP29 PBFREE and KSD880YTU maintain ROHS3 compliance and REACH unaffected status. Regulatory requirements for hazardous substance restrictions and chemical inventory reporting remain satisfied with this substitution.

Q: Can the KSD880YTU be used in applications requiring the full 40 V specification?

A: Yes. The KSD880YTU is rated for 60 V collector-emitter breakdown voltage, which exceeds the 40 V requirement. Applications designed for 40 V operation operate within the safe operating area of the KSD880YTU with additional voltage margin.

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