Equivalent & Substitute Parts Reference for TIP29D-S

Part Overview

TIP29D-S is an NPN Bipolar Junction Transistor (BJT) manufactured by Bourns Inc., designated as obsolete. The part features a maximum collector-emitter voltage of 120 V and a maximum collector current of 1 A, housed in a TO-220-3 through-hole package. With its product status as obsolete, it is necessary to identify functionally equivalent or substitute models for ongoing or new designs that rely on direct component replacement in the same category, mounting type, and electrical performance.

Key Parameters

Parameter	Main Part (TIP29D-S)
Transistor Type	NPN
Collector-Emitter Breakdown Voltage (Max)	120 V
Collector Current (Max)	1 A
DC Current Gain (hFE) (Min)	40 @ 200mA, 4V
Collector Cutoff Current (Max)	300µA
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A
Power (Max)	2 W
Package / Case	TO-220-3
Mounting Type	Through Hole
RoHS Status	ROHS3 Compliant
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute grouping is based strictly on identical category (Transistors, Bipolar (BJT)), NPN transistor type, equivalent electrical ratings (maximum collector current, similar or higher power dissipation), similar mounting type (Through Hole), interchangeable package (TO-220-3), and compliance characteristics. Collector-emitter voltage and current gain are also considered in substitution, ensuring direct replacement without mechanical or compliance conflicts.

Key substitution parameters:

Transistor type: NPN
Collector-emitter breakdown voltage (max)
Collector current (max)
DC current gain (hFE, min)
Power rating (max)
Vce saturation (max) at defined test conditions
Package/case and mounting type
RoHS compliance

Parameter Comparison

Parameter	Main Part (TIP29D-S)	Substitute (TIP29CG)
Transistor Type	NPN	NPN
Collector-Emitter Breakdown Voltage (Max)	120 V	100 V
Collector Current (Max)	1 A	1 A
DC Current Gain (hFE) (Min)	40 @ 200mA, 4V	15 @ 1A, 4V
Collector Cutoff Current (Max)	300µA	300µA
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A	700mV @ 125mA, 1A
Power (Max)	2 W	2 W
Package / Case	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TIP29D-S is identified as obsolete. TIP29CG from onsemi matches mounting type, package, and several key electrical parameters, and complies with ROHS3 regulation as required. Both parts have the same collector current (1 A), maximum power (2 W), and package. Product status and regulatory compliance are sufficient to enable substitution in contexts where comparable electrical and mechanical fit is required.

Frequently Asked Questions (FAQ)

Q1: What are the critical considerations for substituting TIP29D-S with TIP29CG?
A1: The substitution is based on matching transistor type (NPN), collector current, power rating, package (TO-220-3), mounting type (Through Hole), and compliance with ROHS3 requirements.

Q2: Does TIP29CG fit the same physical footprint as TIP29D-S?
A2: TIP29CG uses the same TO-220-3 package and through-hole mounting type, ensuring physical compatibility.

Q3: Are there differences in collector-emitter breakdown voltage?
A3: TIP29CG has a collector-emitter breakdown voltage of 100 V compared to TIP29D-S’s 120 V. This is an explicit difference in the electrical rating.

Q4: How does DC current gain compare between the parts?
A4: TIP29D-S specifies a minimum DC current gain of 40 @ 200mA, 4V; TIP29CG specifies 15 @ 1A, 4V.

Q5: What compliance certifications are considered in substitution?
A5: Both TIP29D-S and TIP29CG are ROHS3 compliant, with product category compliance aligning for component replacement usage.

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