TIP29C-S Equivalent & Substitute Parts Reference

Part Overview

The TIP29C-S is a Bipolar Junction Transistor (BJT), NPN type, in the TO-220 package with 100 V collector-emitter voltage, 1 A maximum collector current, and 2 W power rating. Its obsolete status means it is no longer in production, prompting engineers to identify direct or functionally compatible substitute BJT transistors with matching electrical and mechanical parameters.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100 V
Current - Collector (Ic) (Max)	1 A
Vce Saturation (Max) @ Ib, Ic	700 mV @ 125 mA, 1 A
Current - Collector Cutoff (Max)	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Power - Max	2 W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for TIP29C-S (BJT NPN 100 V 1 A 2 W TO-220) are grouped strictly according to the following main parameters: transistor type (NPN), collector-emitter voltage (100 V max), maximum collector current (minimum 1 A for direct substitutes; higher values acceptable if all other parameters match), maximum saturation voltage (700 mV at test conditions), cutoff current (≤300 µA), DC current gain (minimum 15 at 1 A, 4 V), maximum power dissipation (minimum 2 W), same TO-220 mechanical footprint, and RoHS3 environmental compliance.

Parameter Comparison

td>NPN

Manufacturer Part Number	Manufacturer	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Operating Temperature	Mounting Type	Package / Case	RoHS Status
TIP29C-S	Bourns Inc.	NPN	100 V	1 A	700 mV @ 125 mA, 1 A	300 µA	15 @ 1A, 4V	2 W	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant
TIP29C	NTE Electronics, Inc	100 V	1 A	700 mV @ 125 mA, 1 A	300 µA	15 @ 1A, 4V	2 W	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant
TIP29CG	onsemi	NPN	100 V	1 A	700 mV @ 125 mA, 1 A	300 µA	15 @ 1A, 4V	2 W	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant
BD239C	STMicroelectronics	NPN	100 V	2 A	700 mV @ 200 mA, 1 A	300 µA	15 @ 1A, 4V	2 W	150°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant
BD239CTU	onsemi	NPN	100 V	2 A	700 mV @ 200 mA, 1 A	300 µA	15 @ 1A, 4V	30 W	150°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant

Engineering Selection Recommendations

Given the product status "Obsolete" for TIP29C-S, selection of TIP29C, TIP29CG, BD239C, or BD239CTU is allowed based on identical or higher ratings for all electrical and mechanical parameters. Each substitute is classified as ROHS3 Compliant. All substitute devices are available in a TO-220-3 through-hole package, matching environmental, mechanical, and compliance requirements.

Frequently Asked Questions (FAQ)

Q1: What key parameters must match when substituting TIP29C-S?
A1: The substitute must be an NPN transistor, 100 V collector-emitter voltage, at least 1 A maximum collector current, 700 mV maximum Vce(sat), cutoff current ≤300 µA, minimum DC current gain 15 @ 1A, 4V, power rating at least 2 W, through-hole mounting, TO-220-3 package, and RoHS3 compliance.

Q2: Are higher current and power substitutes acceptable?
A2: Substitute parts with higher current (Ic) or power dissipation are acceptable if all other listed parameters are matched or exceeded.

Q3: Are all the listed substitutes pin-to-pin compatible with TIP29C-S?
A3: All listed substitutes utilize the TO-220-3 package for through-hole mounting, ensuring mechanical compatibility.

Q4: Is environmental compliance consistent across substitutes?
A4: All substitutes provided are ROHS3 Compliant, matching the original part’s compliance specification.

Q5: Does the frequency transition parameter affect substitution?
A5: Only parameters explicitly listed are considered for substitution. Frequency transition values are given where available; compatibility is determined by main electrical and mechanical parameters.

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