TIP29C Equivalent & Substitute Parts

Part Overview

The TIP29C is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 1 A maximum collector current. The device is packaged in a TO-220-3 through-hole configuration with a maximum power dissipation of 2 W. The TIP29C maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified to address inventory availability, extended lead times, or design flexibility requirements while maintaining electrical and mechanical compatibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	1	A
Power - Max	2	W
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V	—
Current - Collector Cutoff (Max)	300	µA
Operating Temperature (TJ)	150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TIP29C is determined by the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must be greater than or equal to 100 V
Maximum collector current must be greater than or equal to 1 A
Vce saturation characteristics must be compatible at specified bias conditions
DC current gain (hFE) minimum must meet or exceed 15 @ 1A, 4V
Collector cutoff current must not exceed 300 µA

Mechanical Compatibility Criteria:

Package must be TO-220-3 through-hole configuration
Power dissipation capability must support 2 W minimum

Compliance Criteria:

ROHS3 compliance required
REACH unaffected status required

Substitute parts are grouped into two categories:

Direct Equivalents: Parts with identical electrical ratings (100 V, 1 A) and full parameter alignment.

Functional Substitutes: Parts with equal or superior electrical ratings (higher current capability or power dissipation) that operate within the same voltage and package specifications, enabling drop-in replacement in applications where the TIP29C is specified.

Parameter Comparison

Parameter	TIP29C (STMicroelectronics)	TIP29CG (onsemi)	TIP29BG (onsemi)	BD239C (STMicroelectronics)	BD239CTU (onsemi)
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	80 V	100 V	100 V
Current - Collector (Ic) (Max)	1 A	1 A	1 A	2 A	2 A
Power - Max	2 W	2 W	2 W	2 W	30 W
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A	700mV @ 125mA, 1A	700mV @ 125mA, 1A	700mV @ 200mA, 1A	700mV @ 200mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V	15 @ 1A, 4V	15 @ 1A, 4V	15 @ 1A, 4V	15 @ 1A, 4V
Current - Collector Cutoff (Max)	300 µA	300 µA	300 µA	300 µA	300 µA
Operating Temperature (TJ)	150°C	-65°C ~ 150°C	-65°C ~ 150°C	150°C	150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Last Time Buy

Engineering Selection Recommendations

TIP29CG (onsemi): Direct equivalent to TIP29C with identical electrical specifications (100 V, 1 A, 2 W). Manufactured by onsemi under the same base product number TIP29. Maintains Active product status and ROHS3 compliance. Extended operating temperature range (-65°C to 150°C) provides broader environmental capability. Suitable for direct replacement in all applications where TIP29C is specified.

TIP29BG (onsemi): Rated for 80 V collector-emitter breakdown voltage with 1 A maximum collector current. Operates within the same 2 W power envelope and maintains identical DC current gain characteristics. Product status is Active with ROHS3 compliance. Selection of TIP29BG is appropriate only in applications where the 80 V rating is sufficient and cost optimization is a design objective. Not suitable for circuits requiring 100 V breakdown voltage margin.

BD239C (STMicroelectronics): Rated for 100 V collector-emitter breakdown voltage with 2 A maximum collector current, providing 100% current margin over TIP29C specifications. Maintains 2 W power dissipation rating and identical DC current gain. Manufactured by STMicroelectronics with Active product status and ROHS3 compliance. Suitable for applications requiring higher current capability within the same voltage and power constraints.

BD239CTU (onsemi): Rated for 100 V collector-emitter breakdown voltage with 2 A maximum collector current and 30 W maximum power dissipation. Provides significant thermal and current margin over TIP29C. Product status is Last Time Buy, indicating limited future availability. ROHS3 compliant. Selection of BD239CTU is appropriate for new designs requiring enhanced thermal performance, but not recommended for long-term production due to Last Time Buy status.

Frequently Asked Questions (FAQ)

Q: Can TIP29CG be used as a direct replacement for TIP29C?

A: Yes. TIP29CG is a direct equivalent with identical electrical ratings (100 V, 1 A, 2 W) and DC current gain characteristics. Both devices are NPN transistors in TO-220-3 packages with ROHS3 compliance. The primary difference is manufacturer (onsemi versus STMicroelectronics) and extended operating temperature range in TIP29CG.

Q: Is TIP29BG compatible with TIP29C applications?

A: TIP29BG is compatible only in applications where the 80 V collector-emitter breakdown voltage is sufficient. The device shares identical 1 A current rating, 2 W power dissipation, and DC current gain with TIP29C. Applications requiring 100 V breakdown voltage margin must not use TIP29BG.

Q: What is the advantage of BD239C over TIP29C?

A: BD239C provides 2 A maximum collector current compared to TIP29C's 1 A rating, offering 100% current margin. Both devices maintain 100 V breakdown voltage and 2 W power dissipation. BD239C is suitable for applications requiring higher current handling within identical voltage and thermal constraints.

Q: Why is BD239CTU marked as Last Time Buy?

A: BD239CTU carries Last Time Buy status, indicating the manufacturer (onsemi) has announced end-of-life for this part number. Existing inventory is available, but future procurement is not guaranteed. New designs should not incorporate BD239CTU; TIP29CG or BD239C are recommended alternatives.

Q: Are all substitute parts in the same TO-220-3 package?

A: Yes. All listed substitute parts (TIP29CG, TIP29BG, BD239C, BD239CTU) are packaged in TO-220-3 through-hole configuration, enabling mechanical interchangeability on printed circuit boards designed for TO-220-3 mounting.

Q: Do all substitute parts meet ROHS3 compliance?

A: Yes. TIP29C, TIP29CG, TIP29BG, BD239C, and BD239CTU are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component procurement.

Q: What is the difference in operating temperature range between TIP29C and TIP29CG?

A: TIP29C specifies maximum junction temperature of 150°C. TIP29CG specifies operating temperature range of -65°C to 150°C, providing extended low-temperature capability. Both devices operate identically within the 0°C to 150°C range typical of industrial applications.

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